Electrical and optical study of Cu(In, Ga)Se2 co-evaporated thin films

Co-evaporation technique from three sources was used to prepare Cu(In, Ga)Se₂ polycrystalline thin films for photovoltaic conversion. Their conductivity was studied in the range 20–300 K. The grain boundary scattering mechanism is mainly responsible for the diffusion process in the latter materials. In the low temperature region, we interpret the data in terms of Mott law and the analysis is very consistent with the variable range hopping. However, thermoionic emission is predominant at high temperatures. When the conductivity deviates from the classical grain boundary conduction models, inhomogeneity is then considered and parameters such as the standard deviation and the mean potential barrier height are derived. Transmittance measurements yielded band gap values of 1.07 and 1.64 eV for CuInSe₂ and CuGaSe₂, respectively.     

Control and manipulation of entanglement between two coupled qubits by fast pulses

We have investigated the analytical and numerical dynamics of entanglement for two qubits that interact with each other via Heisenberg XXX-type interaction and subject to local time-specific external kick and Gaussian pulse-type magnetic fields in $x$ – $y$ plane. The qubits have been assumed to be initially prepared in different pure separable and maximally entangled states and the effect of the strength and the direction of external fast pulses on concurrence has been investigated. The carefully designed kick or pulse sequences are found to enable one to obtain constant long-lasting entanglement with desired magnitude. Moreover, the time ordering effects are found to be important in the creation and manipulation of entanglement by external fields.     

Using New Hybrid Integrators to Design IIR Fractional-Order Integrators via Impulse Invariance Method

This paper presents a method for designing fullband and non-fullband IIR digital integrators with linear phase that has been used to approximate fractional-order integrators with IIR filters. Several numerical integration rules have been considered in this study, namely, Euler, Simpson, Schneider, bilinear, and F₀₁₂. The main idea in our design is based on interpolating the well-known integration rules (Euler, Bilinear and Simpson) proposed by Al-Alaoui combined with deterministic signal modeling techniques. Numerical examples are presented to illustrate the performance of the proposed integrators. It was found that the Euler–Simpson integrator gives better approximation accuracy than existing integrators.     

The development of a high throughput reactor for the catalytic screening of three phase reactions

The design and utilisation of a reactor for the optimisation of multiple heterogeneous catalytic reactions in liquid phase is described. With the ability to screen up to 25 samples simultaneously at a maximum pressure of 50 bar, the reactor is one of the first to be designed specifically for what is termed stage II, the optimisation phase, of catalytic high throughput experimentation (HTE). Experiments demonstrating the reliability and reproducibility of the reactor are described, including the use of the reactor to study the catalytic hydrogenation of crotonaldehyde (CrAld) over bimetallic samples based on a commercial 5 wt.% Pt on activated carbon catalyst. Modification of the mono-metallic Pt sample by the impregnation of aqueous metal salts and various pre-treatments, resulted in 140 bimetallic catalysts that were used in the hydrogenation study. The changes observed in both selectivity and reactivity of the modified catalysts are described and show, by way of example, how the speed of catalyst screening can be increased by at least an order of magnitude.     

Processing and Electrical Properties of 0.5Pb(Yb1/2Nb1/2)O3-0.5PbTiO3 Ceramics

Pb(Yb_1/2Nb_1/2)O₃-PbTiO₃ ceramics at the morphotropic phase boundary (50:50) were sintered by conventional and reactive methods to 95% theoretical density and grain sizes <10 m. Excess PbO, added to enhance the densification, resulted in PbO-based non-ferroelectric phases that degraded the electrical properties. Volatilization of excess PbO by annealing the samples after sintering resulted in dense, perovskite samples and excellent electrical properties. The best electrical properties, obtained via reactive sintering, were a remanent polarization, P _r, of 0.36 C/m², a maximum dielectric constant of 31,000 (at the T _c = 371°C and 1 kHz), a piezoelectric charge coefficient, d ₃₃, of 508 pC/N, and an electromechanical coupling coefficient, k ₃₃, of 0.61.     

Oscillatory combustion of propene during in situ mechanical activation of solid catalysts

Mechanochemical activation of solids can lead to a strong increase in their activity as catalysts in heterogeneously catalyzed reactions. In the following, we report on the effects of solid catalyst activation during ball milling that lead to oscillatory behavior in CO and CO₂ formation during propene oxidation. The oscillations arise under in situ ball milling conditions over chromium(III) oxide (Cr₂O₃) and cerium(IV) oxide (CeO₂), respectively. The experiments were conducted under continuous gas flow at ambient pressure and temperature, using both a modified steel and a tungsten carbide milling vessel. Abrasion of particles from the steel milling vessel could be eliminated as the sole cause for the oscillations through substitution by a tungsten carbide milling vessel. The intensity and frequency of oscillations are shown to be dependent on the propene-to-oxygen ratio, the milling frequency, milling ball size and metal oxide used. Overall, Cr₂O₃ shows higher activity for oscillatory propene combustion under in situ mechanical activation than CeO₂.     

Soft error modeling and analysis of the Neutron Intercepting Silicon Chip (NISC)

Soft errors are transient errors caused due to excess charge carriers induced primarily by external radiations in the semiconductor devices. Soft error phenomena could be used to detect thermal neutrons with a neutron monitoring/detection system by enhancing soft error occurrences in the memory devices. This way, one can convert all semiconductor memory devices into neutron detection systems. Such a device is being developed at The Pennsylvania State University and named Neutron Intercepting Silicon Chip (NISC). The NISC is envisioning a miniature, power efficient, and active/passive operation neutron sensor/detector system. NISC aims to achieve this goal by introducing ¹⁰B-enriched Borophosphosilicate Glass (BPSG) insulation layers in the semiconductor memories. In order to model and analyze the NISC, an analysis tool using Geant4 as the transport and tracking engine is developed for the simulation of the charged particle interactions in the semiconductor memory model, named NISC Soft Error Analysis Tool (NISCSAT). A simple model with ¹⁰B-enriched layer on top of the lumped silicon region is developed in order to represent the semiconductor memory node. Soft error probability calculations were performed via the NISCSAT with both single node and array configurations to investigate device scaling by using different node dimensions in the model. Mono-energetic, mono-directional thermal and fast neutrons are used as the neutron sources. Soft error contribution due to the BPSG layer is also investigated with different ¹⁰B contents and the results are presented in this paper.     

Sintering behaviour of silicon nitride powders produced by carbothermal reduction and nitridation

In this study, the sintering behaviour of silicon nitride (Si₃N₄) powders (having in situ form sintering aids/self-sintering additives) produced directly by the carbothermal reduction and nitridation (CRN) process is reported. The sintering of as-synthesised α-phase Si₃N₄ powders was studied, and the results were compared with a commercial powder. The α-Si₃N₄ powders, as-received contains magnesium, yttrium or lithium–yttrium-based oxides that were shaped with cold isostatic pressing and tape casting techniques. The compacts and tape casted samples are then pressureless-sintered at 1650–1750 °C for up to 2 h. After sintering, the density and the amount of β-phase formation were examined in relation to the sintering temperature and time. The highest density value of 3.20 g cm^?3 was obtained after only 30 min of pressureless sintering (at 1700 °C) of Si₃N₄ powders produced by CRN from silica initially containing 5 wt.% Y₂O₃. Silicon nitride powders produced by the CRN process performed similarly or even better than results from the pressureless sintering process compared with the commercial one.     

Performance of a lead glass spectrometer at high energies

The performance of a photon detector consisting of two lead glass arrays and three planes of proportional tubes is reported. The detector was designed to measure the energies and positions of photons in the energy range 3–50 GeV. An energy resolution of $\text{1.0\% +}\text{5.0\%}\text{√E}$ (standard deviation) and a spatial resolution approaching 3 mm (standard deviation) were achieved during calibration with a low intensity positron beam. The energy resolution was degraded during use with a high intensity hadron beam whereas the spatial resolution was only slightly affected.