Statistical analysis of decision threshold for parallel acquisitionwith reference filtering in Rician fading channel

Statistical analysis of the decision threshold for parallel PN code acquisition in a Rician fading channel is presented. It is shown that in the performance analysis of the acquisition system with reference filtering, the statistical evaluation of the decision threshold seems more appropriate than the approximation of the decision threshold     

A high performance parallel DCT with OpenCL on heterogeneous computing environment

A noteworthy thing in desktop PCs is that they can provide a great opportunity to increase the performance of processing multimedia data by exploiting task- and data-parallelism with multi-core CPU and many-core GPU. This paper presents a high performance parallel implementation of 2D DCT on this heterogeneous computing environment. For this purpose, Intel TBB (threading building blocks) and OpenCL (Open Compute Language) are utilized for task- and data-parallelism, respectively. The simulation result shows that the parallel DCT implementations far the serial ones in processing speed. Especially, OpenCL implementation shows a linear speedup, a typical SIMD characteristic as the increase of 2D data sets.     

Amyloid Formation in Nanoliter Droplets

Processes that monitor the nucleation of amyloids and characterize the formation of amyloid fibrils are vital to medicine and pharmacology. In this study, we observe the nucleation and formation of lysozyme amyloid fibrils using a facile microfluidic system to generate nanoliter droplets that can control the flow rate and movement of monomer-in-oil emulsion droplets in a T-junction microchannel. Using a fluorescence assay, we monitor the nucleation and growth process of amyloids based on the volume of droplets. Using the microfluidic system, we demonstrate that the lag phase, which is vital to amyloid nucleation and growth, is reduced at a lower droplet volume. Furthermore, we report a peculiar phenomenon of high amyloid formation at the edge of a bullet-shaped droplet, which is likely due to the high local monomer concentration. Moreover, we discovered that amyloid fibrils synthesized in the nanoliter droplets are shorter and thicker than fibrils synthesized from a bulk solution via the conventional heating method. Herein, a facile procedure to observe and characterize the nucleation and growth of amyloid fibrils using nanoliter droplets is presented, which is beneficial for investigating new features of amyloid fibril formation as an unconventional synthetic method for amyloid fibrils.     

Amphiphilic Poly(p‐phenylene)s for Self‐Organized Porous Blue‐Light‐Emitting Thin Films

Micro‐ and nanostructuring of conjugated polymers are of critical importance in the fabrication of molecular electronic devices as well as photonic and bandgap materials. The present report delineates the single‐step self‐organization of highly ordered structures of functionalized poly(p‐phenylene)s without the aid of either a controlled environment or expensive fabrication methodologies. Microporous films of these polymers, with a honeycomb pattern, were prepared by direct spreading of the dilute polymer solution on various substrates, such as glass, quartz, silicon wafer, indium tin oxide, gold‐coated mica, and water, under ambient conditions. The polymeric film obtained from C₁₂PPPOH comprises highly periodic, defect‐free structures with blue‐light‐emitting properties. It is expected that such microstructured, conjugated polymeric films will have interesting applications in photonic and optoelectronic devices. The ability of the polymer to template the facile micropatterning of nanomaterials gives rise to hybrid films with very good spatial dispersion of the carbon nanotubes.     

Effect of Oxygen Binding Energy on the Stability of Indium‐Gallium‐Zinc‐Oxide Thin‐Film Transistors

From a practical viewpoint, the topic of electrical stability in oxide thin‐film transistors (TFTs) has attracted strong interest from researchers. Positive bias stress and constant current stress tests on indium‐gallium‐zinc‐oxide (IGZO)‐TFTs have revealed that an IGZO‐TFT with a larger Ga portion has stronger stability, which is closely related with the strong binding of O atoms, as determined from an X‐ray photoelectron spectroscopy analysis.     

Synergizing spatial and temporal texture

Temporal texture accounts for a large proportion of motion commonly experienced in the visual world. Current temporal texture techniques extract primarily motion-based features for recognition. We propose a representation where both the spatial and the temporal aspects of texture are coupled together. Such a representation has the advantages of improving efficiency as well as retaining both spatial and temporal semantics. Flow measurements form the basis of our representation. The magnitudes and directions of the normal flow are mapped as spatiotemporal textures. These textures are then aggregated over time and are subsequently analyzed by classical texture analysis tools. Such aggregation traces the history of a motion which can be useful in the understanding of motion types. By providing a spatiotemporal analysis, our approach gains several advantages over previous implementations. The strength of our approach was demonstrated in a series of experiments, including classification and comparisons with other algorithms.     

Effects of Interfacial Dielectric Layers on the Electrical Performance of Top‐Gate In‐Ga‐Zn‐Oxide Thin‐Film Transistors

We investigate the effects of interfacial dielectric layers (IDLs) on the electrical properties of top‐gate In‐Ga‐Zn‐oxide (IGZO) thin film transistors (TFTs) fabricated at low temperatures below 200°C, using a target composition of In:Ga:Zn = 2:1:2 (atomic ratio). Using four types of TFT structures combined with such dielectric materials as Si₃N₄ and Al₂O₃, the electrical properties are analyzed. After post‐annealing at 200°C for 1 hour in an O₂ ambient, the sub‐threshold swing is improved in all TFT types, which indicates a reduction of the interfacial trap sites. During negative‐bias stress tests on TFTs with a Si3N4 IDL, the degradation sources are closely related to unstable bond states, such as Si‐based broken bonds and hydrogen‐based bonds. From constant‐current stress tests of Id = 3 µA, an IGZO‐TFT with heat‐treated Si₃N₄ IDL shows a good stability performance, which is attributed to the compensation effect of the original charge‐injection and electron‐trapping behavior.     

Preparation and Thermoelectric Properties of p-Type Yb-Filled Skutterudites

p-Type Yb _z Fe_4?x Co _x Sb₁₂ skutterudites were prepared by encapsulated melting and hot pressing, and the filling and doping (charge compensation) effects on the transport and thermoelectric properties were examined. The electrical conductivity of all specimens decreased slightly with increasing temperature, indicating that they were in a degenerate state due to high carrier concentrations of 10²⁰ cm^?3 to 10²¹ cm^?3. The Hall and Seebeck coefficients exhibited positive signs, indicating that the majority carriers are holes (p-type). The Seebeck coefficient increased with increasing temperature to maximum values of 100 μV/K to 150 μV/K at 823 K. The electrical and thermal conductivities were reduced by substitution of Co for Fe, which was responsible for the decreased carrier concentration. Overall, the Yb-filled Fe-rich skutterudites showed better thermoelectric performance than the Yb-filled Co-rich skutterudites.