Analysis of Characteristic Impedance and Effective Dielectric Constant of Asymmetrical Coplanar Waveguide with Finite Dimensions

Conformal mapping techniques are used to obtain the closed-form expressions of the characteristic impedance and effective dielectric constant of the asymmetrical coplanar waveguide with finite line dimensions and substrate thickness. These closed-form expressions are generally applicable to design various particular types of coplanar waveguide transmission lines.     

共蒸发制备GaSb多晶薄膜的研究

GaSb的禁带宽度为0.72eV,是热光伏电池的理想材料。采用共蒸发的方法,在普通玻璃衬底上生长GaSb多晶薄膜。通过XRD谱、Hall及透射反射谱测试,研究了Ga、Sb源的蒸发温度、衬底温度以及薄膜厚度对薄膜的结构特性和光电特性的影响。研究表明,随衬底温度的升高、薄膜厚度的增加,晶粒尺寸逐渐增大;随衬底温度的升高、Ga源温度的降低以及厚度的增加,迁移率逐渐上升,迁移率最高可达172cm2/(V.s);随衬底温度的降低、Ga源温度的提高以及厚度的增加,载流子浓度逐渐增加。     

Cu(In1-xGax)Se2薄膜太阳电池的J-V特性

对Cu(In1-xGax)Se2(CIGS)太阳电池J-V特性曲线进行了测试和分析,采用Matlab软件进行计算,得到电池的二极管品质因子、反向饱和电流密度、串联电阻、并联电阻等特性参数.采用数值逼近法,将得到的参数回归J-V方程,与测试结果符合较好.对不同光照强度下电池的特性参数进行计算,发现并联电阻随光照强度增加而降低,并分析了原因.     

Cu(In1-xGax)Se2薄膜太阳电池的J-V特性

对Cu（In1-xGax）Se2（CIGS）太阳电池J-V特性曲线进行了测试和分析,采用Matlab软件进行计算,得到电池的二极管品质因子、反向饱和电流密度、串联电阻、并联电阻等特性参数，采用数值逼近法,将得到的参数回归J-V方程,与测试结果符合较好，对不同光照强度下电池的特性参数进行计算,发现并联电阻随光照强度增加而降低,并分析了原因。     

共蒸发方法制备GaSb多晶薄膜

We report optical and electrical properties of polycrystalline GaSb thin films which were successfully grown by co-evaporation on soda-lime glass substrates. The thin films have preferential orientation of the （111） direction. SEM results indicate that the average grain size of GaSb thin film is 500 nm with the substrate temperature of 560 ℃. The average reflectance of GaSb thin film is about 30% and the absorption coefficient is of the order of 10^4 cm^-1. The optical bandgap of GaSb thin film is 0.726 eV. The hole concentration shows a clear increasing trend as the Ga-evaporation-temperature/Sb-evaporation-temperature （TGa/Tsb） ratio increases. When the Ga crucible temperature is 810 ℃ and the antinomy crucible temperature is 415 ℃, the hole concentration of polycrystalline GaSb is 2 × 10^17 cm^-3 and the hole mobility is 130 cm^2/（V·s）. These results suggest that polycrystalline GaSb thin film is a good candidate for the use as a cheap material in TPV cells.     

Cu(In,Ga)Se2太阳电池窗口层光学常数的测量与计算

采用多层薄膜反射率与透射率非相干叠加的方法,计算Cu(In,Ga)Se2(CIGS)多晶薄膜太阳电池的窗口层(CdS薄膜和ZnO薄膜)的光学常数,并通过科希方程和塞尔迈耳方程对计算的折射率进行了拟合,给出了拟合公式,为CIGS多晶薄膜太阳电池结构的光学设计和优化奠定了基础.     

共面微波探针在片测试技术研究

本文描述了使用共面微波探针的半导体芯片在片测试技术.设计研制出的多种微波探针性能参数稳定,使用寿命在十万次以上,用于在片检测各种GaAs共面集成电路芯片.触头排列为GSG的微波探针,-3dB带宽及反射损耗分别为14GHz和小于-10dB.     

Analysis of Characteristic Impedance and Effective Dielectric Constant of Asymmetrical Coplanar Waveguide with Finite Dimensions

Coplanar waveguide transmission lines have become quite attractive due to its applica-tion to microwave or millimeter-wave integrated circuits and devices.Calculations of char-acteristic impedance and effective dielectric constant of...