排序方式: 共有73条查询结果,搜索用时 15 毫秒
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对X65M管线钢在不同调质处理工艺下的组织性能进行了研究。结果表明,在900℃淬火,660~670℃回火条件下,达到最佳性能匹配,X65M管线钢具有良好的综合性能,可获得低的屈强比(0.85)。 相似文献
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An optimized modeling method of 8 × 100 μm AlGaN/GaN-based high electron mobility transistor (HEMT) for accurate continuous wave (CW) and pulsed power simulations is proposed. Since the self-heating effect can occur during the continuous operation, the power gain from the continuous operation significantly decreases when compared to a pulsed power operation. This paper extracts power performances of different device models from different quiescent biases of pulsed current-voltage (I-V) measurements and compared them in order to determine the most suitable device model for CW and pulse RF microwave power amplifier design. The simulated output power and gain results of the models at Vgs = -3.5 V, Vds = 30 V with a frequency of 9.6 GHz are presented. 相似文献
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为筛选优质药食兼用型紫叶紫苏资源,本研究对源于贵州、湖南、山西和黑龙江的14个紫叶紫苏品系(编号C01~C14)叶片的基本营养品质、主要活性成份和微量矿物质含量进行了测定,并利用因子分析和系统聚类分析对紫苏叶营养品质进行评价,同时分析了各紫苏叶片的精油型。结果显示,不同紫苏的粗蛋白、粗脂肪、粗纤维、可溶性蛋白、总游离氨基酸和可溶性糖含量依次为12.87~19.52、2.07~4.19、6.59~9.84 g/100 g、0.99~2.49、0.17~1.57、28.90~61.54 g/kg,黄酮、总酚和维生素C等活性物质含量分别为13.28~24.35 g/kg、59.26~99.18 mg/kg、1.16~8.17 mg/100 g。Fe、Zn、Mn和Cu四种矿物质含量依次为13.96~27.86、5.60~8.94、4.63~19.74和0.52~2.61 mg/kg。因子分析显示,紫叶紫苏叶片营养成分可以提取出“糖和矿质元素”、“活性物质”、“蛋白质”和“脂肪”4个公因子,综合品质表现最优的为C05,其次为C12、C11、C06和C10。利用系统聚类分析将14份紫苏划分为“高糖... 相似文献
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A Ka-band GaN amplifier MMIC has been designed in CPW technology,and fabricated with a domestic GaN epitaxial wafer and process.This is,to the best of our knowledge,the first demonstration of domestic Kaband GaN amplifier MMICs.The single stage CPW MMIC utilizes an AlGaN/GaN HEMT with a gate-length of 0.25μm and a gate-width of 2×75μm.Under Vds=10 V,continuous-wave operating conditions,the amplifier has a 1.5 GHz operating bandwidth.It exhibits a linear gain of 6.3 dB,a maximum output power of 22 dBm and a peak PAE of 9.5%at 26.5 GHz.The output power density of the AlGaN/GaN HEMT in the MMIC reaches 1 W/mm at Ka-band under the condition of Vds=10 V. 相似文献
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This paper investigates load-pull measurement of AlGaN/GaN high electron mobility transistors (HEMTs) at different numbers of gate fingers. Scalable small-signal models are extracted to analyze the relationship between each model''s parameters and the number of device''s gate fingers. The simulated S-parameters from the small-signal models are compared with the reflection coefficients measured from the load-pull measurement system at X-band frequencies of 8.8 and 10.4 GHz. The dependency between the number of device''s gate fingers and load-pull characterization is presented. 相似文献
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