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1.
Chou Y.C. Leung D. Lai R. Grundbacher R. Barsky M. Kan Q. Tsai R. Wojtowicz M. Eng D. Tran L. Block T. Liu P.H. Nishimoto M. Oki A. 《Electron Device Letters, IEEE》2003,24(6):378-380
The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications. 相似文献
2.
Buttari D. Chini A. Meneghesso G. Zanoni E. Moran B. Heikman S. Zhang N.Q. Shen L. Coffie R. DenBaars S.P. Mishra U.K. 《Electron Device Letters, IEEE》2002,23(2):76-78
Pre-metal-deposition reactive ion etching (RIE) was performed on an Al0.3Ga0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs 相似文献
3.
This brief presents a necessary and sufficient condition for testing positive, real, imaginary, and negative rational functions. A related term, the positive, imaginary, and negative polynomial, is defined and two necessary and sufficient conditions for testing it are given. 相似文献
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6.
S. Mardnio P. Lucena Randall Q. Snurr Clio L. Cavalcante Jr. 《Microporous and mesoporous materials》2008,111(1-3):89-96
The adsorption of xylene isomers in AlPO4-11 (AEL network) was investigated using biased grand canonical Monte Carlo (GCMC) simulations. Preferential o-xylene adsorption was predicted by the simulations, in agreement with previously reported experimental data. In AlPO4-11 the selective adsorption behavior comes from the smaller length of the o-xylene molecule along the crystallographic c-axis compared to p-xylene. This is in contrast to AlPO4-5 and AlPO4-8, where the ortho-selectivity is caused by the characteristic face-to-face positioning of o-xylene. Energy minimization studies were also performed in a flexible AlPO4-11 lattice to study the structural changes upon xylene adsorption. The energy minimization study showed that the AlPO4-11 crystal distorts upon p- and o-xylene adsorption. The distortion mechanism is related to the strong interaction between xylene methyl groups and the sieve oxygen atoms in the O3 position in the wide region of the pore. 相似文献
7.
8.
van Driel W.D. van Gils M.A.J. Xuejun Fan Zhang G.Q. Ernst L.J. 《Components and Packaging Technologies, IEEE Transactions on》2008,31(2):260-268
Exposed pad packages were introduced in the late 1980s and early 1990s because of their excellent thermal and electrical performance. Despite these advantages, the exposed pad packages experience a lot of thermo-hygro-mechanical related reliability problems during qualification and testing. Examples are die lift, which occurs predominantly after moisture sensitivity level conditions, and die-attach to leadframe delamination leading to downbond stitch breaks during temperature cycling. In this chapter, nonlinear finite element (FE) models using fracture mechanics based J-integral calculations are used to assess the reliability problems of the exposed pad package family. Using the parametric FE models any geometrical and material effects can be explored to their impact on the occurrence diepad delamination, and dielift. For instance the impact of diepad size is found to be of much less importance as the impact of die thickness is. Using the fracture mechanics approach, the starting location for the delamination from thermo-hygro-mechanical point of view is deducted. The results indicate that when diepad delamination is present, cracks are likely to grow beneath the die and dielift will occur. The interaction between dielift and other failure modes, such as lifted ball bonds, are not found to be very significant. The FE models are combined with simulation-based optimization methods to deduct design guidelines for optimal reliability of the exposed pad family. 相似文献
9.
Bin Xie Shi X.Q. Han Ding 《Components and Packaging Technologies, IEEE Transactions on》2008,31(2):361-369
In an anisotropic conductive adhesive (ACA) assembly, the electrical conduction is usually achieved with the conductive particles between the bumps of integrated circuit (IC) and corresponding conductive tracks on the glass substrate. Fully understanding of the mechanical and electrical characteristics of ACA particles can help to optimize the assembly process and improve the reliability of ACA interconnection. Most conductive particles used in the ACA assembly are with cracks in the metal coating of the particles after the ACA bonding. This paper introduced the fracture analysis by applying the cohesive elements in the numerical model of the nickel-coated polymer particle and further simulating the cracks initiation and propagation in the nickel coating during the ACA bonding. The simulation results showed that the stress distribution on the nickel-coated particle with cracks was significantly different from that on the nickel-coated particle without crack, indicating that the stress analysis by taking the crack into consideration is very important for the reliability assessment of the ACA interconnection. The stress analysis of cohesive elements indicated that the cracks initiated at the central area of the nickel coating and propagated to the polar area. Furthermore, by the introduction of a new parameter of the virtual resistance, a mathematical model was established to describe the electrical characteristics of the nickel-coated particle with cracks. The particle resistance of the nickel-coated particle with cracks was found to be much higher than that of the particle without crack in the optimized bonding pressure range, indicating that it is necessary to take the crack into consideration for the particle conduction analysis as well. Therefore, the fracture analysis on the conductive particle by taking the crack into consideration could accurately evaluate the reliability of ACA interconnection and avoid serious reliability issues. 相似文献
10.
Anders From Rolf Sandstr m 《International Journal of Refractory Metals and Hard Materials》1996,14(5-6):407-417
Porosity and uncombined carbon in cemented carbides are traditionally assessed by comparison to standardized microstructure charts, such as those in ISO 4505-1978. To improve the accuracy in the characterization a fully automatic image analysis procedure has been developed. The analysis is performed using light optical microscopy on unetched polished specimens. The implemented algorithm separates uncombined carbon, C-defects, from pores, A- and B-defects. Pores are approximately distributed in a random way in the structure. Uncombined carbon is on the other hand precipitated into clusters of carbon particles. This difference is together with defect size used as a base for the separation. Small defects situated close together are classified as C-defects, small isolated defects as A-pores and large defects as B-pores. Pores are found to be more round than the somewhat elongated C-defects. The difference in shape is significant and can also be used as a separation criterion.
Image analysis is used to quantitatively characterise the ISO 4505-1978 standard charts with respect to volume fraction, number density and size distribution of defects. The results are compared to measured distributions for true microstructures. 相似文献