GaAs pHEMT-based technology for microwave applications in a volume MMIC production environment on 150-mm wafers

The establishment of a 150-mm (6-in) gallium arsenide (GaAs) facility is described together with the development of very high yielding and cost-effective semiconductor device technologies and a manufacturing capacity of over 40000 wafers/annum. The background to the demand for very high volumes of RF products for this market is discussed, together with the prospects for future growth. The paper describes recent process development by the utilization of a data-driven yield management system to support the delivery of high-quality RF products to customers. Finally, "end of line" DC and RF testing of finished 150-mm GaAs pHEMT foundry wafers is described, enabling scalar measurements of power, noise, and intermodulation products as well as vector measurements of S-parameters and noise parameters at frequencies of up to 40 GHz.     

On the hot-carrier-induced post-stress interface trap generation inn-channel MOS transistors

A continued fast interface trap generation is observed in n-channel MOS transistors after termination of the hot-carrier stress. The magnitude of this post-stress effect is strongly dependent on the conditions of the preceding stress, on the post-stress conditions and on the process parameters. For measurements at 293 K, a simple model is proposed which is based on the release of hydrogen by the thermal detrapping of holes, and which can explain the observed dependencies. The importance of the post-stress D_it-generation is illustrated for the case of dynamic stress conditions where it can lead to an apparently deviating degradation behavior     

Molecular Genetics of Conjunctival Melanoma and Prognostic Value of TERT Promoter Mutation Analysis

The aim of this study was exploration of the genetic background of conjunctival melanoma (CM) and correlation with recurrent and metastatic disease. Twenty-eight CM from the Rotterdam Ocular Melanoma Study group were collected and DNA was isolated from the formalin-fixed paraffin embedded tissue. Targeted next-generation sequencing was performed using a panel covering GNAQ, GNA11, EIF1AX, BAP1, BRAF, NRAS, c-KIT, PTEN, SF3B1, and TERT genes. Recurrences and metastasis were present in eight (29%) and nine (32%) CM cases, respectively. TERT promoter mutations were most common (54%), but BRAF (46%), NRAS (21%), BAP1 (18%), PTEN (14%), c-KIT (7%), and SF3B1 (4%) mutations were also observed. No mutations in GNAQ, GNA11, and EIF1AX were found. None of the mutations was significantly associated with recurrent disease. Presence of a TERT promoter mutation was associated with metastatic disease (p-value = 0.008). Based on our molecular findings, CM comprises a separate entity within melanoma, although there are overlapping molecular features with uveal melanoma, such as the presence of BAP1 and SF3B1 mutations. This warrants careful interpretation of molecular data, in the light of clinical findings. About three quarter of CM contain drug-targetable mutations, and TERT promoter mutations are correlated to metastatic disease in CM.     

Surface Areas of Nitrated Hydrotalcites

Hydrotalcites in the nitrate form were prepared using microwave irradiation in the hydrotreatment step. The surface area (BET) of nitrated hydrotalcites was evaluated. Solids were characterized by atomic absorption, X-ray diffraction and BET analysis. Thermal pretreatment temperature determined the surface area of the hydrotalcites.     

Study of secondary relaxations of poly(ethylene terephthalate) by photoluminescence technique

The α and β relaxation processes in two types of poly(ethylene terephthalate) with different degrees of crystallinity were studied by means of three methods, differential scanning calorimetry, dynamic-mechanical analysis and fluorescence spectroscopy. Information provided is complementary in the mean that every method sense phenomena that may occur at different times and length scales. Several probes, Coumarin 152 (C152), Coumarin 153 (C153), Coumarin 337 (C337) and 4′-dimethylamino-4-nitrostilbene (DMANS), were adsorbed in polymer films, and their fluorescence analysed over the temperature range from −150 to 150 °C. In general, a decrease in fluorescence intensity of probes as temperature increase was observed. This behaviour has been explained as a consequence of the enhancement of the free volume fraction that favoured the radiationless process of the lowest excited singlet state. Plots of fluorescence intensity versus temperature showed changes around the secondary relaxation temperatures. Therefore, good correlations between fluorescence and dynamic mechanical and calorimetric analysis were established. The obtained results indicated that the fluorescence from the probes incorporated to the material was dependent on the crystallinity of polymer. It would indicate that the fluorescence emission from those probes can be used to analyse annealing processes in semicrystalline polymers.