Theoretical model for flash generation

Reduction of flash generated in a gas vent is of great concern for manufacturers of electronic parts. The present study proposes a theoretical model for flash generation through consideration of flow characteristics in a gas vent. The model predicts the factors controlling flash, i.e., material parameters such as zero‐shear viscosity, crystallization temperature, thermal conductivity, and heat capacity, and process parameters such as injection and mold wall temperatures, packing pressure, and the clearance of a gas vent. On the other hand, we measure the amount of flash generated in the molding of poly(phenylene sulfide) (PPS) composites containing glass fiber and spherical fillers (CaCO₃ or Al₂O₃). Flash reduces with decreasing size of spherical fillers. These experimental data are successfully interpreted using the flash model. Polym. Eng. Sci., 45:198–206, 2005. © 2005 Society of Plastics Engineers     

On the Limitation of Net Algorithm for Enumerating Isomeric Structures of Giant Fullerenes

Application of our net algorithm to the generation of all possible IPR isomers for giant fullerenes C_n, n=102 to 120, missed nine out of 39,621 possible structures. Analysis revealed that the omission of too small and too large cap triangles was the reason. Within the range of fullerenes studied, the missed structures are of high-energy and do not affect the distribution of significantly low-energy isomers.     

Communication network protocol for real-time distributed controland its LSI implementation

A new token-passing mechanism, priority token passing, which features real-time access and fast detection and recovery of transmission errors, is discussed in detail in comparison with standard token-passing protocols, and its large-scale integration (LSI)-oriented design concept is described. Priority token passing includes only a small performance overhead, due to its switching functions, which can change network topology from ring to broadcast medium. A token-holding node passes the token to another node after determining the successor through priority comparison. Errors occurring during token passing can, thus, be detected and corrected simply and promptly. Priority token passing has a simple hardware implementation, requiring only small additions to the frame control circuitry, and has a small implementation overhead. The priority token-passing protocol and two other important network communication functions, dual ring network reconfiguration and high-level data link control (HDLC) normal response mode-based message transmission, are designed as a single finite-state machine, and implemented into a compact LSI chip. This integrated instrument network (IINET) chip provides complete network communication services and requires only three additional external electronic components for operation     

Effective lightning protection schemes for distribution line

The causes of lightning outage are subdivided into direct lightning strokes and induced lightning strokes, which are identified by the characteristics of the lightning overvoltage. In the past, lightning protection devices were directed mainly toward the latter, and attention has been focused on the installation of lightning protection devices, ground wires, and reinforcement of insulators. However, lightning outages continue to occur. Thus it is extremely important to clarify the fault characteristics of lightning surges and to study the effectiveness of various lightning protection devices by considering both direct lightning stroke and induced lightning stroke in order to prevent lightning outage in the future. In this research, the electromagnetic transients program (EMTP) has been applied to the direct lightning stroke, and the induced lightning outage analysis program for multiple conductor systems has been applied to the induced lightning stroke to study the effectiveness of lightning protection devices provided by combination of various lightning protection devices. The most effective lightning protection schemes are analyzed and evaluated based on verification tests on the full scale models as well as economic considerations.     

Doubly Bonded C60 Dimers and Congeners: Computational Studies of Structures, Bond Energies and Transformations

Initial steps of thermal transformation from doubly bonded [2+2] (1) and [4+4] (2) dimers of C₆₀ have been analyzed on the basis of computed structural features and Pople's energy partition scheme. Completely conjugated C₁₂₀ structures 3 and 4 are found to be considerably stable and proposed to be important intermediates. The linkage patterns in 3 and 4 are also likely to appear in the repeating units of the metastable dimer and polymer phases of A₁ crystals.     

Cloning of a novel signal-transducing adaptor molecule containing an SH3 domain and ITAM

We molecularly cloned a cDNA coding for a novel phosphotyrosine molecule with a 70 kDa molecular mass, named STAM (signal transducing adaptor molecule), which is tyrosine-phosphorylated rapidly after stimulation with various cytokines such as IL-2, IL-3, IL-4, IL-7, GM-CSF, EGF and PDGF. STAM contains an SH3 (Src-homology 3) domain and the ITAM (immunoreceptor tyrosine-based activation motif), suggesting that STAM acts as an adaptor molecule involved in signal transducing pathways from the cytokine receptors.     

Hot-carrier effects in scaled MOS devices

A universal guideline and state-of-the-art hot-carrier effects in scaled MOSFETs are reviewed and discussed from the viewpoints of 1) DC and AC hot-carrier effects, 2) hot-carrier detrapping phenomena, 3) mechanical stress effects on hot-carrier phenomena, and 4) hot-carrier resistant device structures.In the deep-submicron region, the hot-carrier applicable voltage is less than 3 V, so AC hot-carrier effects from the dynamic operation of actual circuits should be taken into account. Despite much experimentation and analysis, there is still no universally accepted theory that explain the AC degradation mechanism. This is because the noise caused by the wiring inductance in ULSI circuits and in measurement systems screens the intrinsic AC hot-carrier effects.Here, AC hot-carrier degradation enhanced by gate pulse-induced-noise is analyzed experimentally and theoretically. After eliminating the noise problem, it is found that AC hot-carrier degradation in LDD (Lightly doped drain) and GOLD (gate-drain overlapped device) structures can be estimated based on DC degradation in terms of the effective stress time which takes the duty ratio into account. In addition, it is found that the noise is negligible when the wiring inductance is smaller that 80 nH (250 mω), which is important for future circuit design.Furthermore, hot-carrier detrapping effects, especially in p-channel MOS devices, and hot-carrier phenomena under mechanical stress are investigated experimentally to better understand the underlying hot-carrier physics. Finally, future hot-carrier resistant device structures are discussed.     

Kinetic PCR analysis: real-time monitoring of DNA amplification reactions

We describe a simple, quantitative assay for any amplifiable DNA sequence that uses a video camera to monitor multiple polymerase chain reactions (PCRs) simultaneously over the course of thermocycling. The video camera detects the accumulation of double-stranded DNA (dsDNA) in each PCR using the increase in the fluorescence of ethidium bromide (EtBr) that results from its binding duplex DNA. The kinetics of fluorescence accumulation during thermocycling are directly related to the starting number of DNA copies. The fewer cycles necessary to produce a detectable fluorescence, the greater the number of target sequences. Results obtained with this approach indicate that a kinetic approach to PCR analysis can quantitate DNA sensitively, selectively and over a large dynamic range. This approach also provides a means of determining the effect of different reaction conditions on the efficacy of the amplification and so can provide insight into fundamental PCR processes.