Isolation of antimicrobial agent from the marine algae Cystoseira hakodatensis

Cystoseira hakodatensis is an unutilised brown algae belonging to family Sargassaceae. A crude methanol extract from the algae showed inhibitory effects on the growths of Bacillus cereus and Bacillus licheniformis. To isolate the major antimicrobial agent, a sequential active‐guided isolation procedure was applied: liquid–liquid extraction, column chromatography and bio‐autography. A marked antimicrobial agent (active α) was isolated in hydrophobic fraction and was determined to phenolics without carbohydrates and proteins by phytochemical test. Regarding the antimicrobial potential, the isolated active α showed better inhibitory effects against B. cereus and B. licheniformis at 2 and 4 times of lower concentrations (62.5 and 31.3 μg mL^?1) in comparison with epigallocatechin gallate. These results showed that C. hakodatensis is a potential source of antimicrobial agent capable of preventing the growth of the two bacteria.     

Effect of Moving Speed of Charged Metallic Spherical Electrode on Electrostatic Discharge

In this investigation, the nature of the electrostatic discharge (ESD) that occurs when a charged object moves toward a stationary grounded object is experimentally clarified. The spark lengths, discharge currents, and induced voltages in a magnetic probe were measured when a charged metallic spherical electrode connected to a 422 pF capacitor approached a stationary grounded object, which was the current target, for different moving speeds of the charged metallic spherical electrode in a range of 1 mm/s to 100 mm/s. The charge voltages of the capacitor were +6.5 kV and +10 kV. Based on the results, the average gap length shortened with the speed of the spherical electrode. The average peak values of the discharge current and the induced voltage were likely to increase with the speed of the spherical electrode. The average rise times of the discharge current and the induced voltage were likely to drop with the speed of the spherical electrode. The relation between the spark length and the discharge current due to the ESD can be explained qualitatively by using an equation derived from the spark resistance formula proposed by Rompe and Weizel.     

Tuning-current splitting network for three-section DBR lasers

A simple current-splitting network for DBR-laser frequency tuning is proposed that distributes a single control current among two tuning sections and can adjust the current distribution without yielding impedance mismatching. The nonlinear characteristics of the tuning sections realise the non-proportional current splitting suitable for continuous tuning; 470 GHz (3.8 nm) tuning range is achieved     

An analysis of shielding against DC magnetic fields generated by electric railways. Evaluation of effective permeability of fine structure

This paper describes an effective analysis of magnetic shielding based on homogenization. The analyses become time‐consuming if the problems include the magnetic substances having fine structure. The homogenization of the structure makes it possible to analyze effectively the magnetic fields. The authors introduce a method to estimate the effective permeability of the homogenized substance. This method can be applied to any periodic structure made of magnetic substance. The magnetic shielding effects by the structures against direct‐current (DC) fields generated by electric railways are analyzed by using the present method. As a result, it is found that the overhead way and the protective fence near the railway work as a magnetic shield, whose effects can be improved by appropriate arrangement of those constructions. © 2007 Wiley Periodicals, Inc. Electr Eng Jpn, 160(4): 7–15, 2007; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20310     

Electrochemically induced asymmetrical etching in InAlAs/InGaAs heterostructures for MODFET gate-groove fabrication

We have achieved a self-controlled asymmetrical etching in metalorganic chemical vapor deposition-grown InAlAs/InGaAs heterostructures, which can be suitable for fabricating modulation-doped field-effect transistors (MODFETs) with gate-groove profiles for improved performance. The technology is based on electrochemical etching phenomena, which can be effectively controlled by using different surface metals for ohmic electrodes. When surface metals of Pt and Ni are deposited on the source and the drain, respectively, the higher electrode potential of Pt results in slower etching on the source side than on the drain side. Thus, asymmetry of gate grooves can be formed by wet-chemical etching with citric-acid-based etchant. This represents a new possibility to conduct “recess engineering” for InAlAs/InGaAs MODFETs.     

The importance of electrochemistry-related etching in thegate-groove fabrication for InAlAs/InGaAs HFETs

For the first time, the surface metal on nonalloyed ohmic electrodes is found to significantly change the profiles of gate grooves, when resist openings are employed to monitor drain current during wet-chemical gate recess for sub-micron InAlAs/lnGaAs heterojunction field-effect transistors (HFETs). The surface metal of Ni enhances the etching rate in comparison with that in the absence of electrodes by a factor of 4 and 10, laterally and vertically, which is favorable to fabricate deep gate grooves with small side etching. The Pt surface metal, however, leads to preferential etching of InGaAs over InAlAs, which can be useful to realize large side etching. The existence of an electrochemistry-related etching component, which arises when the ohmic electrodes are present during recess etching, is considered to be responsible for these behaviors     

Design and characteristics of InGaAs/InP composite-channel HFET's

A design for composite-channel structures consisting of an InGaAs channel and an InP subchannel for use as heterostructure field-effect transistors is presented for the first time. This novel channel structure takes advantage of both the high drift velocity and low impact ionization of InP at high electric fields as well as the high electron mobility of InGaAs at low electric fields. It is shown that the doping density of the InP subchannel is the key parameter to realize the advantages of the composite channel. A very high transconductance of 1.29 S/mm and a current gain cutoff frequency of 68.7 GHz are achieved with 0.6 and 0.7 /spl mu/m gates, respectively. The average velocity of electrons in the composite channel is 2.9/spl times/10/sup 7/ cm/s. The devices have no kink phenomena in their I-V characteristics possibly due to low impact ionization in the InP subchannel.<>     

Inhibitory effect of alpha-tocopherol on methemoglobin formation by nitric oxide in normal and acatalasemic mouse hemolysates

The inhibitory effect of alpha-tocopherol on methemoglobin formation in normal and acatalasemic mice was studied by exposing their hemolysates to nitric oxide. Methemoglobin formation in normal and acatalasemic mouse hemolysates exposed to nitric oxide were significantly inhibited by the addition of alpha-tocopherol at final concentrations ranging from 1.2 to 5.8 mM. Negative correlations were observed between the logarithm of alpha-tocopherol concentration and the methemoglobin formation. The formation of methemoglobin in acatalasemic mouse hemolysates was greater than that in normal mouse hemolysates with or without added alpha-tocopherol. The methemoglobin formation in acatalasemic mice was also significantly inhibited by addition of more than 500 units/ml of catalase, and the methemoglobin formation in normal and acatalasemic mice was also inhibited with sodium diethyldithiocarbamate at a final concentration of 1 M.     

High Gd Concentration GaGdN Grown at Low Temperatures

GaGdN layers were grown at temperatures below 300°C by radio-frequency plasma-assisted molecular beam epitaxy on sapphire substrates. GaGdN samples with high Gd concentration as high as 12.5% were obtained by lowering the growth temperature. X-ray diffraction results showed no obvious secondary phase, which means that the phase separation can be suppressed by the growth at low temperatures. All samples, including those grown at room temperature, showed ferromagnetic characteristics. Photoluminescence emission was observed, though spectra exhibit broad and sharp luminescence bands related to many kinds of defects. It is suggested that electrons coming from defects, especially, nitrogen vacancy, stabilize ferromagnetism, and that the carrier-induced ferromagnetism occurs in the low-temperature-growth GaGdN.