On the Growth of Thin-Film AlGaN/GaN Epitaxial Heterostructures on Hybrid Substrates Containing Layers of Silicon Carbide and Porous Silicon

Semiconductors - Abstract—In our work, we carry out a structural-spectroscopic study of AlGaN/GaN epitaxial layers grown by molecular-beam epitaxy with nitrogen-plasma activation on a hybrid...     

Phase formation,structure and properties of light-weight aluminosilicate proppants based on clay-diabase and clay-granite binary mixes

One of the drawbacks of fusible clays is the narrow sintering interval due to a sharp increase in the amount of iron-silicate melt at a temperature of 1000–1100 °C, which hardens in the form of a glass phase upon cooling. This leads to a relatively low mechanical strength of the calcined samples and causes the danger of melting the granular material surface from such clays during the firing process. To increase the strength of samples of fusible clays, the influence of diabase and granitoid rocks was considered. It was found that the strengthening effect of diabase and granitoid rock additives in an amount of 20–50% in a mixture with fusible clay is due to an increase of total content of the crystalline phase (mullite, cristobalite and residual quartz) from 18–20% in clays without additives to 22–28 % - in mixtures with diabase and to 28–34% - with granitoid additives) at a temperature of 1050–1100 °C. This increase is due to the activation of synthesis processes of secondary mullite and crystallization from alkali-rich feldspar melt of amorphous silica, released from the structure of clay minerals. The established influence of the igneous rocks used made it possible to develop compositions and propose process flow sheet for producing aluminosilicate proppants based on fusible clays. The use of granitoid and diabase rocks in an amount of 20–70% with fusible clays produces lightweight aluminosilicate proppants with bulk density of 1.40–1.46 g/cm³ at temperature range of 1050–1100 °C, which can endure destructive pressures up to 34.5–52 MPa.     

The design of multiple feedback topology Chebyshev low-pass active filter with average differential evolution algorithm

Neural Computing and Applications - This study presents the design of a tenth-order multiple feedback Chebyshev low-pass filter (MF-C-LPF). Component selection and gain calculation of filters are...     

Photovoltaic Power Supply Unit for the Basic Stations of Cellular Companies

The data on the use of solar photovoltaic plants (PVPs) for providing a reliable and guaranteed power supply to telecommunication systems and cellular communication systems in the conditions prevalent in Uzbekistan are given. The research-based structures developed by OOO MIR SOLAR and the selection of PVP elements ensuring their reliable operation are described. The main influencing factors are discussed, and the use of effective combinations of different types of panels (from monocrystalline and polycrystalline silicon) and a specially developed controller are considered.     

Effect of ZnO layer thickness upon optoelectrical properties of NiO/ ZnO heterojunction prepared at room temperature

In this work, p-NiO/n-ZnO heterostructures were successfully prepared at room temperature using RF sputtering technique. The influence of ZnO layer thickness on the performance of the heterojunction was investigated. The deposited ZnO layers have a hexagonal Wurtzite structure with preferable growth orientations along (002) and (103) for thinner films. Increasing the thickness results in more crystallographic orientation randomness. The current–voltage measurements of the realized heterojunctions showed a clear rectifying behavior. The measured ideality factor varies from 2.5 to 1.6 according to the thickness of ZnO layer. The series resistance of the device is enlarged with increasing ZnO thickness. The deduced parameters from the I–V characteristics suggest that 200 nm is the optimal thickness of the ZnO layer according to our experimental conditions. We attribute the relatively better performance of this thickness to achieving reasonable compensation between serial resistance and ideality factor. The best heterojunction was tested and successfully used as a UV detector.     

A Code Assignment Algorithm for Nonblocking OVSF Codes in WCDMA

OVSF codes are used as channelization codes in WCDMA. Due to code blocking property of OVSF codes, the bandwidth available in the system is severely limited. Code reassignments mitigate the impact of the blocking property at the expense of causing delays and decreasing the throughput of the system. Nonblocking OVSF (NOVSF) codes have been proposed to alleviate the adverse effect of code reassignments. This paper presents a code assignment algorithm for NOVSF codes, which does not require any code reassignments. Simulation results show that NOVSF codes achieve better throughput than OVSF codes, even though code reassignments are allowed in the assignments of OVSF codes.