Matrix influence on the piezoelectric properties of piezoelectric ceramic/polymer composite exhibiting particle alignment

This study was addressed to the influence of an electric field strength applied at fabrication process and matrix properties, such as the dielectric constant and the Young's modulus, on “pseudo‐1‐3 piezoelectric ceramic/polymer composite” in order to further enhance the piezoelectricity of that. The pseudo‐1‐3 piezoelectric ceramic/polymer composite consists of linearly ordered piezoelectric ceramic particles in polymer material. Silicone gel, silicone rubber, urethane rubber, and poly‐methyl‐methacrylate, which exhibit different dielectric constants and Young's modulus, were used as matrices to evaluate the matrix influence. The piezoelectricity of the pseudo‐1‐3 piezoelectric ceramic/polymer composite was evaluated using the piezoelectric strain constant d₃₃. The d₃₃ is one of the indices of the piezoelectric properties for piezoelectric materials. As a result, it was confirmed that d₃₃ of the pseudo‐1‐3 piezoelectric ceramic/polymer composite increased with the increase of the electric filed strength applied at fabrication process, though, it reached a constant value at a certain strength value. Further it was confirmed that dielectric constant of the matrix had a small influence on d₃₃ of the pseudo‐1‐3 piezoelectric ceramic/polymer composite, however, in case of matrix of lower Young's modulus, d₃₃ was increase. © 2014 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2015 , 132, 41817.     

Anatase Sol Prepared from Peroxotitanium Complex Aqueous Solution Containing Niobium or Vanadium

Niobium- or vanadium-doped anatase sols were prepared by hydrothermal treatment of 0.1 mol/dm³ peroxotitanium complex aqueous solutions dissolving 0–10 mol% niobium or vanadium at 100°C for 8 h. Niobium-doping caused the increase of lattice constants of anatase and the shape change of anatase crystal from spindle-like to cubic-like structure, but no change of the optical absorbance. Vanadium-doping caused the decrease of lattice constant of c -axis, the miniaturization of anatase crystal and the increase of optical absorbance at the wavelength from 350–700 nm.     

The effect of ionic cross-links on the deformation behavior of homoblends made of poly(styrene-co-styrenesulfonic acid) and poly(styrene-co-4-vinylpyridine)

Deformation behavior of stoichiometric blends made from poly(styrene-co-styrenesulfonic acid) (SPS) and poly(styrene-co-4-vinylpyridine) (SVP) was investigated by TEM observation of strained thin films. An FTIR investigation revealed that ionic cross-links were formed between the component polymers upon blending due to intermolecular ion-ion interactions, which arose from proton transfer from sulfonic acid groups to pyridine groups. TEM observations indicate that the deformation mode of the blends changed from crazing only to crazing plus shear deformation, with the shear contribution becoming larger, as the ion content in the blends increased. Such changes in deformation mode can be understood as arising from an increase in the ‘effective’ strand density due to the formation of ionic cross-links upon blending. It was also found that the ionic cross-links via pyridinium cation/sulfonate anion ion pairs were more effective in inducing the transition of deformation mode than ionic cross-links via -SO₃⁻/Na⁺ or -SO₃⁻/Ca²⁺ ion pairs.     

Chemical potentials of oxygen for three-phase assemblages of CaSiO3(s) + Ca3Si2O7(s) + {CaO + SiO2 + FexO} melt and Ca3Si2O7(s) + Ca2SiO4(s) + {CaO + SiO2 + FexO} melt

By employing an electrochemical technique involving stabilized zirconia as solid electrolyte and Mo + MoO₂ mixture as reference electrode, the equilibrium oxygen partial pressures for three-phase assemblages of CaSiO₃(s) + Ca₃Si₂O₇(s) + {CaO + SiO₂ + Fe_xO} melt and Ca₃Si₂O₇(s) + Ca₂SiO₄(s) + {CaO + SiO₂ + Fe_xO} melt were determined as: - log {P_O2 (CS + C₃S₂ + L)/bar} = - 3.22 13000/(T/K) ± 0.05 - log {P_O2 (C₃S₂ + C₂S + L)/bar} = - 0.92 16400/ (T/K) ± 0.04. respectively, where CS, C₃S₂ and C₂S indicate CaSiO₃(s), Ca₃Si₂O₇(s). and Ca₂SiO₄(s), respectively.     

Biphasic effect of hydrogen peroxide on field potentials in rat hippocampal slices

In the CA1 region of rat hippocampal slices, H2O2 (0.294-2.94 mM) caused initial augmentation, and subsequent long-lasting depression, of population spikes and excitatory postsynaptic potentials. The effect of H2O2 may not be mediated by its degradation product, hydroxyl radicals, because an iron chelator deferoxamine did not block the effect. A catalase inhibitor 3-amino-1,2,4-triazole only modestly attenuated the initial augmentation, suggesting that the effect of H2O2 is not attributable to catalase-dependent O2 generation, either. An N-methyl-D-aspartate receptor antagonist DL-2-amino-5-phosphonovaleric acid had no influence on the effect of H2O2, whereas a gamma-aminobutyric acid type A receptor channel blocker picrotoxin attenuated long-lasting depression, indicating that gamma-aminobutyric acid-mediated inhibition is altered during the depression phase. The initial augmentation but not subsequent depression was attenuated by a phospholipase A2/C inhibitor 4-bromophenacyl bromide, suggesting the involvement of lipid signaling molecule(s) in the enhancement of excitatory synaptic transmission. These results suggest that H2O2 regulates hippocampal synaptic transmission via multiple mechanisms.     

Computation of mutual entropy in quantum markov chains

There are several damping phenomena in quantum optics. Such phenomena have been usually explained by open systems. In statistical physics, open system dynamics have been used to study the irreversibility and the approach to equilibrium. In this paper, the dynamical change of the mutual entropy for an open system, frequently studied in the quantum optics literature, is rigorously computed through a model of quantum Markov chain. In particular, the concrete formula of Stinespring expression for such a model is obtained and applied to the derivation of the mutual entropy, and some computational results are presented.     

The predominant contribution of oligopeptide transporter PepT1 to intestinal absorption of beta-lactam antibiotics in the rat small intestine

Although recent evidence suggests that certain beta-lactam antibiotics are absorbed via a specific transport mechanism, its nature is unclear. To confirm whether peptide transport in the rat can be largely ascribed to the intestinal oligopeptide transporter PepT1, the transporter has been functionally characterized and its significance in the intestinal absorption of beta-lactam antibiotics was evaluated. For evaluation of transport activity complementary RNA (cRNA) of rat PepT1 was synthesized in-vitro and expressed in Xenopus laevis oocytes. cRNA induced uptake of several beta-lactam antibiotics and the dipeptide [14C]glycylsarcosine; this was specifically inhibited by various dipeptides and tripeptides but not by their constituent amino acids or by tetra- or pentapeptides. The transport activity of PepT1 for beta-lactam antibiotics correlated well with their in-vivo intestinal transport and absorption. Furthermore, mutual inhibitory effects on uptake were observed between glyclsarcosine and beta-lactam antibiotics. Hybrid depletion of the functional expression of rat PepT1 in oocytes injected with rat intestinal epithelial total mRNA was studied using an antisense oligonucleotide corresponding to the 5'-coding region of PepT1. In oocytes injected with rat mRNA pre-hybridized with the antisense oligonucleotide against rat PepT1, the uptake of [14C]glycylsarcosine was almost completely abolished, whereas its uptake was not influenced by a sense oligonucleotide for the same region of PepT1. Similarly, the uptake of beta-lactam antibiotics was also reduced by the antisense oligonucleotide against rat PepT1. These results demonstrate that the intestinal proton-coupled oligopeptide transporter PepT1 plays a predominant role in the carrier-mediated intestinal absorption of beta-lactam antibiotics and native oligopeptides in the rat.     

InxGa1−xAs ohmic contacts to n-type GaAs with a tungsten nitride barrier

Significant reduction of the contact resistance of In_0.7Ga_0.3As/Ni/W contacts (which were previously developed by sputtering in our laboratory) was achieved by depositing a W₂N barrier layer between the Ni layer and W layer. The In_0.7Ga_0.3 As/Ni/W₂N/W contact prepared by the radio-frequency sputtering technique showed the lowest contact resistance of 0.2 Ωmm after annealing at 550°C for 10 s. This contact also provided a smooth surface, good reproducibility, and excellent thermal stability at 400°C. The polycrystalline W₂N layer was found to suppress the In diffusion to the contact surface, leading to improvement of the surface morphology and an increase in the total area of the In_xGa−As between metal and the GaAs substrate. These improvements are believed to reduce the contact resistance.