Repulsive Flux Pinning Force in NbTi/Nb Superconductor/Superconductor Multilayers

Flux pinning characteristics have been investigated for the Nb _x Ti_100-x /Nb(x = 65, 50 and 28) and Nb ₂₈ Ti ₇₂/Nb ₆₅ Ti ₃₅ superconductor(S)/superconductor(S^′) multilayers. The maximum of the pinning force F _{p⊥ max} perpendicular to the layer plane as a function of the structure modulation length λ has a peak in the quasi-two-dimensional region (λ～20 nm). The maximum. values of the F _{p⊥ max} versus λ curve are proportional to the difference of the GL coherence length (ξ _GL ) between the superconductive sublayers S and S^′. The results suggest that the large F _{p⊥ max} in the S/S^′ multilayer is caused by the repulsive pinning force due to Nb layers with larger ξ _GL .     

Coating of hydroxyapatite on metal plates using thermal dissociation of calcium-EDTA chelate in phosphate solutions under hydrothermal conditions

Coating of hydroxyapatite on various metal plates was carried out by a homogeneous precipitation technique using hydrothermal reactions in Ca(edta)^2-–NaH₂PO₄ at 140–200°C and pH 3.4–10.0. Hydroxyapatite films were formed on the surface of the iron plates in solutions at an initial pH above 4.7, whereas aggregates consisting of needle-like hydroxyapatite crystal radiating from a point in the form of flower deposited as islands on the surface of aluminum, copper and titanium plates. The upper part of the film formed on the surface of the iron plates consisted of needle-like hydroxyapatite particles whereas the bottom of the film consisted of spherical hydroxyapatite particles. The length of the needle-like hydroxyapatite particles increased with decreasing concentration of Ca(edta)^2-.     

Effect of 8 MeV electron irradiation on electrical properties of CuInSe2 thin films

Radiation damages due to 8 MeV electron irradiation in electrical properties of CuInSe₂ thin films have been investigated. The n-type CuInSe₂ films in which the carrier concentration was about 3×10¹⁶ cm⁻³, were epitaxially grown on a GaAs(0 0 1) substrate by RF diode sputtering. No significant change in the electrical properties was observed under the electron fluence <3×10¹⁶ e cm⁻². As the electron fluence exceeded 10¹⁷ e cm⁻², both the carrier concentration and Hall mobility slightly decreased. The carrier removal rate was estimated to be about 0.8 cm⁻¹, which is slightly lower than that of III–V compound materials.     

Network formation and swelling behavior of photosensitive poly(vinyl alcohol) gels prepared by photogenerated crosslinking

Poly (vinyl alcohol) with pendent styrylpyridinium groups (SbQ) is insolubilized by photoirradiation. An association takes place in SbQ groups. The association of polymer chains becomes marked with increasing the number of SbQ groups. Mainly intermolecular crosslinks were formed. Transparent and homogeneous macrogels consisting of several intermolecular crosslinks are obtained. The proportion of the free water to the bound water in PVA-SbQ gels was 3.3?2.9 despite of the large change in conversion of photodimerization of SbQ groups, x=0.27?0.58. The water uptake after swelling of the gels in water increased 6–27 times compared to the original weight at pH=7. The higher the degree of photocrosslinking, the lower was the degree of swelling. The water diffusion coefficients, D, were (2.2?5.8) × 10^?5 cm² S^?1 for a 88% saponified PVA with 1 . 3 mol% SbQ groups. The volume of the gel increased discontinuously about 10-fold for the 99% saponified PVA with 0 . 096 mol% SbQ and 51% water (49% acetone). The acetone concentration at the transition decreased with increasing the degree of saponification of the PVA.     

Development of three-electrode type micro-electrochemical reactor on anodized aluminum with photon rupture and electrochemistry

Photon rupture with a focused single pulse of pulsed YAG-laser irradiation was used to fabricate an aluminum electrochemical micro-reactor. Porous type anodic oxide film formed on aluminum specimens was irradiated in solutions with a pulsed Nd-YAG laser beam through a convex lens to fabricate micro-channels, micro-electrode, and through holes (for reference electrode, solution inlet, and outlet). During irradiation, specimens were moved by a computer controlled XYZ stage. After irradiation, the surface of the micro-channel and through hole were again treated to form anodic oxide film and the surface of the micro-electrode was treated electrochemically to provide an Au layer. The calculated volume of the micro-reactor including micro-channel and through holes is about 1.5 μl. The cyclic voltammogram of the micro-electrochemical cell was measured in K₃Fe(CN)₆/K₄Fe(CN)₆ with both static and flowing solution at different scanning rates. The anodic and cathodic peak currents were measured and the values depended on scanning rate and ion concentration when the solution was static. With the flowing solution, limiting currents were observed and the anodic limiting current was increased with the cubic root of the solution flow rate.     

Hydrogen adsorption and hydrogen evolution reaction on a polycrystalline Pt electrode studied by surface-enhanced infrared absorption spectroscopy

Hydrogen evolution reaction (HER) on a polycrystalline Pt electrode has been investigated in Ar-purged acids by surface-enhanced infrared absorption spectroscopy and electrochemical kinetic analysis (Tafel plot). A vibrational mode characteristic to H atom adsorbed at atop sites (terminal H) was observed at 2080-2095 cm⁻¹. This band appears at 0.1 V (RHE) and grows at more negative potentials in parallel to the increase in hydrogen evolution current. Good signal-to-noise ratio of the spectra enabled us to establish the quantitative relation between the band intensity (equivalently, coverage) of terminal H and the kinetics of HER, from which we conclude that terminal H atom is the reaction intermediate in HER and the recombination of two terminal H atoms is the rate-determining step. The quantitative analysis of the infrared data also revealed that the adsorption of terminal H follows the Frumkin isotherm with repulsive interaction.