Acute arthritis of cats associated with feline calicivirus infection

Twelve specific pathogen-free cats were infected either by intra-articular inoculation or by contact exposure to one of two strains of feline calicivirus (FCV), either F65, a field strain originating from an outbreak of lameness in a group of cats, or a vaccine strain. Following either route of exposure, both strains induced signs typical of FCV infection including oral and nasal ulceration, conjunctivitis and ocular discharge. These signs were of equal severity for both virus strains, but overall, following either route of infection, F65 induced more severe disease than the vaccine strain, with marked pyrexia, lethargy and lameness. Vaccine virus only induced a relatively mild lameness following intra-articular inoculation. Gross pathological and histopathological lesions were seen in some of the joints, but again changes were more severe in the F65-exposed cats. Virus was isolated from both normal and affected joints from both groups of F65-exposed cats, and from a joint from each cat inoculated intra-articularly with vaccine virus. Mild transient lameness was also seen in one of two control cats inoculated intra-articularly, but no pathological changes were seen or virus isolated from joints. A cDNA probe used in RNA dot blot hybridisation experiments was found to be specific and more sensitive than virus isolation in detecting FCV in selected tissues. This may be useful in future studies on the pathogenesis of FCV disease and in studies on viral persistence in FCV carriers.     

An implicit enthalpy scheme for one-phase Stefan problems

A compact finite-difference scheme to solve one-phase Stefan problems in one dimension is described. Numerical experiments indicate that the moving interface is obtained withO(t) accuracy when 3–4 iterations per time step are used to solve the nonlinear implicit scheme. The scheme can be adapted to ADI methods in higher dimensions.     

The relationship of structure to properties in surfactants

Changes in the various structural units present in surfactants strongly affect the interfacial properties shown by these materials. Such properties as surface tension reduction, micelle formation, wetting, foaming and defoaming, detergency, and dispersion of solids all show marked changes with variations in both the hydrophilic and hydrophobic portions of the surfactant molecule, reflecting the processes occurring on a molecular level. Changes in these properties caused by such factors as the length and nature of the hydrophobic group, branching or unsaturation in the hydrophobic group, the nature of the hydrophilic group and its position in the molecule, and the presence or absence of an ionic charge are described and explained in terms of the molecular processes involved. Presented at the AOCS Short Course, “Update on Detergents and Raw Materials,” Lake Placid, New York, June 1971.     

Coherency Hub Design for Multisocket Sun Servers with CoolThreads Technology

CoHub, a coherency hub ASIC, provides a cost-effective way to extend a glueless two-node chip-multithreading system to a four-node system without changes to the processor. The four-node, 256-thread system achieves near-linear scaling of performance with thread count on transaction-processing workloads. Time-to-market pressure, 800-MHz operation, and a six-stage pipeline were among the constraints that shaped CoHub's design.     

Growth of InGaN HBTs by MOCVD

The design and growth of GaN/InGaN heterojunction bipolar transistors (HBTs) by metalorganic chemical vapor deposition (MOCVD) are studied. Atomic-force microscopy (AFM) images of p⁺InGaN base layers (∼100 nm) deposited under various growth conditions indicate that the optimal growth temperature is limited to the range between 810 and 830°C due to a trade-off between surface roughness and indium incorporation. At these temperatures, the growth pressure must be kept above 300 Torr in order to keep surface pit density under control. An InGaN graded-composition emitter is adopted in order to reduce the number of V-shaped defects, which appear at the interface between GaN emitter and InGaN base and render an abrupt emitter-base heterojunction nearly impossible. However, the device performance is severely limited by the high p-type base contact resistance due to surface etching damage, which resulted from the emitter mesa etch.