Microstructure and domain configurations in ferroelectric PbTiO3 and Pb(Zr,Ti)O3 thin fims

Ferroelectric domain configurations in PbTiO₃ and Pb(Zr_xT_1−x)O₃ (PZT, x = 0.3 or 0.5) thin films have been studied by transmission electron microscopy. The PbTiOg and PZT thin films have been deposited by the ionized cluster beam technique and radio frequency sputtering, respectively. The grain size in these thin films is typically less than 0.5 μm. Lamellar 90°-domain features have been observed in both PbTiO₃ and PZT (30/70) samples. The domain walls correspond to the {011} twin boundaries. La-doping and Ca-modification are shown to affect the microstructure of the PZT films. No clear domain feature occurs in the PZT thin film that has composition near the morphotropic phase boundary. The effects of grain sizes are briefly discussed.     

Cross-sectional atomic force microscopy imaging of polycrystalline thin films

Atomic force microscopy (AFM) can be used to image cross-sections of thin-film samples. So far, however, it has mainly been used to study cross-sections of epitaxial systems or integrated circuits on crystalline substrates. In this paper, we show that AFM is a powerful tool to image fractured cross-sections of polycrystalline thin films deposited on crystalline and non-crystalline substrates, yielding unique information on the three-dimensional properties of the cross-sections, with a spatial resolution in the nm range. Original images of three different heterostructure systems are presented: Si(wafer)/SnO2/CdS/CdTe, glass/Mo/Cu(In,Ga)Se2,/CdS/ZnO, and glass/SnO2/WO3. We discuss the results by comparing AFM and scanning electron microscopy (SEM) images, and explain, for the different materials, why the AFM provides useful additional information.     

Effects of dilution ratio and seed layer on the crystallinity of microcrystalline silicon thin films deposited by hot-wire chemical vapor deposition

We deposited microcrystalline silicon (μc-Si) by hot-wire chemical vapor deposition (HWCVD) at different thickness and dilution ratio, with and without seed layer. As the dilution ratio increased, we observed an increase in the amount of microcrystalline phase in the film, a change in the structure of the grains and a loss of the (220) preferential orientation. The films deposited over a seed layer had a larger fraction of crystalline phase than films deposited with the same parameters but without a seed layer. For high dilution ratios (R=100), most of the film grows epitaxially at the interface with the Si substrate, but a microcrystalline film slowly replaces the single-crystal phase. For low dilution ratios (R=14), the film starts growing mostly amorphously, but the amount of crystalline phase increases with thickness.     

Deposition and properties of CBD and CSS CdS thin films for solar cell application

We deposited cadmium sulfide (CdS) thin films using the chemical-bath deposition (CBD) and close-spaced sublimation (CSS) techniques. The films were then treated in CdCl₂ vapor at 400 °C for 5 min. The CSS CdS films had hexagonal structure, and good crystallinity. The CdCl₂ treatment did not produce major changes, but there was a decrease in the density of planar defects. The untreated CBD CdS films had cubic structure and poorer crystallinity than the CSS films. After the CdCl₂ treatment, these films recrystallized to the hexagonal phase, resulting in better crystallinity and a lower density of planar defects. The conformal coverage and the presence of bulk oxygen are the key issues in making the CBD films more suitable for photovoltaic applications.     

Microcharacterization of composition modulations in epitaxial ZnSe1-xTex

Molecular beam epitaxial growth of the ZnSe_1-xTe_x (x=0.44-0.47) alloy on vicinal (001) GaAs substrates tilted four, six, and nine degree-[111]A or B results in partial phase separation of the alloy with a vertical modulation between different compositions. Transmission electron microscopy images of samples grown on four degree-tilted substrates showed superlattice-like structures, with periods in the range 13.4-28.9Â. Lattice images reveal diffuse interfaces between light and dark bands. Period variations were detected in isolated regions of some samples. We present evidence that the modulation develops at the growth surface, and remains stable in the bulk at temperatures up to 450°C. Satellite spot pairs with approximate indices (h k 1 + δ) were present near the zinc-blende spots in electron diffraction patterns and x-ray diffraction data, as expected from material with a sinusoidal composition profile. The orientation of the spots reveals that the modulation vector is parallel to the growth direction, rather than to [001]. The [111]A- and B-tilted samples showed significant modulation, while the five degree-[110] and on-axis material showed no detectable modulation. The modulation wavelength did not strongly depend on growth temperature in the range examined (285–335°C). Samples showing composition modulation did not exhibit significantly altered low-temperature luminescence spectra from material with no modulation.     

Photoluminescence and interface abruptness in InGaAsP/InGaAsP quantum wells

Quantum well (QW) structures consisting of InGaAsP wells and InGaAsP barriers grown by gas-source molecular beam epitaxy have been examined by low temperature photoluminescence (PL) in order to evaluate the contributions of compositional fluctuations in the quaternary alloy and of interface roughness to the PL linewidth. The well material was InGaAsP with a bandgap corresponding to a wavelength of 1.3 μm and the barrier material was InGaAsP of 1.15 μm. The theory for QW excitonic linewidths as a function of well thickness L_z due to fluctuations in alloy composition has been extended to include the case of the quaternary InGaAsP barrier. If the interfaces are atomically abrupt, the linewidth is dominated by compositional fluctuations in the well at large L_z and compositional fluctuations in the barrier at small L_z. The theory predicts a weak dependence of the linewidth on L_z since the composition of the well and barrier are similar. For rough heterointerfaces, the theory indicates the usual increase in linewidth with decreasing L_z. Photoluminescence measurements at 13K in arrays of single InGaAsP/InGaAsP QWs with L_z from 1.0 to 6.0 nm show only a weak variation of the full width at half maximum (FWHM) with L_z, in agreement with the theory for smooth interfaces. Furthermore, the lowest measured FWHM of 8.9 meV was found for a narrow well of L_z=1.8 nm, indicating the InGaAsP/InGaAsP interfaces are smooth and that the PL linewidth is dominated by compositional fluctuations.     

Joint QoE-based user association and efficient cell–carrier distribution for enabling fully hybrid spectrum sharing approach in 5G mmWave cellular networks

Densifying the network by adding more minicell towers or relays throughout a hot spot area while extensively reusing the available spectrum is an essential choice to improve QoS. Unfortunately, this approach can be prohibitively costly. One possible solution to reduce the capital and operating expenditure in such overdensified networks is the adoption of the spectrum-sharing approach. However, both approaches would complicate the interference phenomenon either among inter- or intraoperators, which may cause serious performance degradation. In this paper, a fully hybrid spectrum-sharing (FHSS) approach aided by an efficient cell–carrier distribution was proposed with consideration to the interference dilemma. Moreover, an adaptive hybrid QoE-based mmWave user association (mUA) scheme was presented to assign a typical user to the serving mmWave base station (mBS), which offers the highest achievable data rate. The proposed FHSS approach (with the presented QoE-based mUA) was compared with recent works and with both FHSS approach using the conventional max-SINR-based mUA, which assigns a typical user to the tagged mBS carrying the highest signal-to-interference-plus noise ratio and the baseline scenario (licensed spectrum access). In particular, three spectrum access methods (licensed, semipooled, and fully pooled) were integrated in a hybrid manner to engage improved data rates to users. Numerical results show that the joint cell–carrier distribution and FHSS approach with QoE-based mUA outperform both baselines FHSS with the max-SINR mUA scheme and the licensed spectrum access. Furthermore, results demonstrate the effectiveness of the proposed approach in terms of both operators’ independence and fairness.

     

Optical response of grain boundaries in upgraded metallurgical-grade silicon for photovoltaics

Using upgraded metallurgical-grade silicon (UMG-Si) is a cost-effective and energy-efficient approach for the production of solar cells. Grain boundaries (GBs) play a major role in determining the device performance of multicrystalline Si (mc-Si) solar cells. In this study two UMG-Si wafers, one from the middle part of a brick and the other from the top part of the same brick, were investigated. An excellent correlation was found between the grain misorientation and the corresponding optical response of GBs as indicated by photoluminescence (PL) imaging, electron backscattered diffraction (EBSD), and cross-sectional transmission electron microscopy (TEM). In addition, the PL features at random GBs depend also on the impurity levels in the wafer. In particular the PL emission was greatly enhanced in the narrow regions close to the random GB in the top wafer, which is an interesting phenomenon that may have potential application in high efficiency light-emission diodes (LEDs) based on Si.     

Effect of substrate temperature on the photoelectrochemical responses of Ga and N co-doped ZnO films

Ga–N co-doped ZnO thin films with reduced bandgaps were deposited on F-doped tin-oxide-coated glass by radio-frequency magnetron sputtering at different substrate temperatures in mixed N₂ and O₂ gas ambient. We found that Ga–N co-doped ZnO films exhibited enhanced crystallinity when compared to undoped ZnO films grown under the same conditions. Furthermore, Ga–N co-doping ensured enhanced N-incorporation ZnO thin films as the substrate temperature is increased. As a result, Ga–N co-doped ZnO thin films exhibited much improved photoelectrochemical (PEC) response, compared to ZnO thin films. Our results therefore suggest that the passive co-doping approach could be a means to improve PEC response for bandgap-reduced wide-bandgap oxides through impurity incorporation.     

Characterization of carrier recombination in lattice-mismatched InGaAs solar cells on GaAs substrates

Effects of thermal annealing on carrier recombination in lattice-mismatched InGaAs solar cells on GaAs substrates were investigated. Thermal annealing to the graded buffer layer was effective to increase the minority carrier lifetime in the solar cell layer. Electron beam-induced current (EBIC) measurements revealed that the density of dark line defects decreased after the thermal annealing, but dark spot defects were newly generated. We conclude that dark line defects were primary responsible for the high recombination in the lattice-mismatched InGaAs solar cells. The origin of dark spot defects was discussed and it was found that they were associated with the lattice mismatch between the InGaP back surface field (BSF) layer and the InGaAs cell layer.