Continuous phase quadrature phase shift keyed signaling techniquewith coding

A continuous phase quadrature phase shift keyed (CPQPSK) modulation technique is presented. This method utilizes a conventional QPSK modulator and a phase trajectory converter to approximate M=4, h=1/4 continuous phase signal and allows low cost, low complexity, and high rate (>1 Gbit/s) CPM modem implementation for bandwidth efficient transmission through nonlinear satellite channels. Using a communications analysis computer program it has been found that CPQPSK has 99 percent out-of-band power of 0.8R (MSK has 99 percent out-of-band power of 1.2 R where R is defined as bit rate), continuous phase trajectories, and nearly constant envelope amplitude. Simulation of realistic hardware designs indicate that the CPQPSK will require an Eb/No of 14 dB to achieve a bit error rate (BER) of 10^-6. Forward error correcting techniques using block codes with an overhead of 10 percent indicate that the Eb/No requirements can be reduced to 11.2 dB for 10^-6 BER     

The effect of aluminium coating on elemental standards in X-ray microanalysis

The standardisation of frozen hydrated bulk biological specimens using gelatin standards is described. The relationship between corrected elemental X-ray counts and ionic concentration was found to be linear, and minimum detectable limits for each element are stated. Variations in uncorrected standard curves were found to be due to changes in aluminium coating thickness. There was an inverse relationship between coating thickness and elemental X-ray counts. The factors causing this are discussed. To avoid errors arising from inconsistent aluminium thickness, experimental material should only be compared with standards of similar aluminium net counts. This can be achieved most easily by mounting and analysing specimen and standard together.     

Fetus-in-fetu with malignant recurrence

Fetus-in-fetu is an unusual condition in which a vertebrate fetus is enclosed within the abdomen of another fetus. These occurrences are usually benign. This report describes an instance of malignant recurrence after resection of a fetus-in-fetu.     

Mass transfer across wind-sheared interfaces

A predictive analogy of turbulent mass transfer across wavy, sheared air-water interface, in deep water bodies is proposed. The theory is based on the formulation of a theoretical eddy diffusivity profile in the surface region, and it applies to the non-breaking wave regime. The predictions for a water-side friction velocity range of 0.5–6 cm/s are in excellent agreement with laboratory data from wind-wave facilities with an average error of 15.4%.     

Controlled oxygen incorporation in indium gallium arsenide and indium phosphide grown by metalorganic vapor phase epitaxy

The defect engineering in metalorganic vapor phase epitaxy In_xGa_1-xAs and InP by controlled oxygen doping using diethyl aluminum ethoxide (DEALO) was developed in this study. DEALO doping has led to the incorporation of Al and O, and the compensation of shallow Si donors in In_xGa_1−xAs: Si with 0 ≤ x ≤ 0.25. With the same DEALO mole fraction during growth, the incorporation of Al and O was found to be independent of x, but the compensation of Si donors decreases with increasing In content. Deep level transient spectroscopy analysis on a series of In_xGa_1-xAs: Si. samples with 0 ≤ x ≤ 0.18 revealed that oxygen incorporation led to a set of deep levels, similar to those found in DEALO doped GaAs. As the In composition was increased, one or more of these deep levels became resonant with the conduction band and led to a high electron concentration in oxygen doped In_0.53Ga_0.47As. Low temperature photoluminescence emission measurements at 12K on the same set of samples revealed the quenching of the near-band edge peak, and the appearance of new oxygen-induced emission features. DEALO doping in InP has also led to the incorporation of Al and O, and the compensation of Si donors due to oxygen-induced multiple deep levels.     

Growth and characterization of GaAs films deposited on Ge/Si composite substrates by metalorganic chemical vapor deposition

We report the results of studies which have been made on heteroepitaxial layers of GaAs and AlGaAs grown by metalorganic chemical vapor deposition on composite substrates that consist of four different types of heteroepitaxial layered structures of Ge and Ge-Si grown by molecular beam epitaxy on (100)-oriented Si substrates. It is found that of the four structures studied, the preferred composite substrate is a single layer of Ge ∼1 μm thick grown directly on a Si buffer layer. The double-crystal X-ray rocking curves of 2 μm thick GaAs films grown on such substrates have FWHM values as small as 168 arc sec. Transmission electron micrographs of these Ge/Si composite substrates has shown that the number of dislocations in the Ge heteroepitaxial layer can be greatly reduced by an anneal at about 750° C for 30 min which is simultaneously carried out during the growth of the GaAs layer. The quality of the GaAs layers grown on these composite substrates can be greatly improved by the use of a five-period GaAs-GaAsP strained-layer superlattice (SLS). Using the results of these studies, low-threshold optically pumped AlGaAs-GaAs DH laser structures have been grown by MOCVD on MBE Ge/Si composite substrates.     

Ultrafast Spectroscopy of La2−x Sr x CuO4 Single Crystals

We present measurements of the ultrafast optical response of La_2–x Sr _x CuO₄ single crystals at two different doping levels (x=0.15, 0.07) as a function of temperature. Owing to the 40-fs time resolution of our experiment, we are able to measure both the build-up and the decay of the ultrafast signal. We show for the first time that the temperature dependence of the transient reflectance amplitude tracks the thermal depletion of the superfluid density. At low temperature we identify a new regime characterized by an extremely long, temperature-dependent rise-time (3 ps). The doping dependence of the relaxation rate suggests that this is sensitive to the scattering of quasiparticles by low-energy spin excitations.     

Hemispheric priming by meaningful and nonmeaningful symbols in language-trained chimpanzees (Pan troglodytes): Further evidence of a left hemisphere advantage.

Hemispheric priming was examined in 3 language-trained chimpanzees (Pan troglodytes) using a simple reaction time (RT) paradigm. Ss were required to hold down a response button until the occurrence of a response cue. A warning stimulus was presented to either the left visual field or the right visual field (RVF) before the response cue occurred. No warning stimulus was presented on control trials. The warning stimuli were geometric communicative symbols from 2 semantic categories: food and tools. A 3rd set of warning stimuli were familiar geometric symbols. Dependent measures included RT and the number of false-positive responses. RT data indicated an RVF advantage in priming when the warning stimuli were food or tool symbols. No significant visual half-field differences were found for familiar symbols, but a trend toward an RVF advantage was observed. These effects were enhanced when Ss responded with their left hand. False-positive data also indicated an RVF advantage for the food and tool warning stimuli. The data indicate that hemispheric asymmetries for processing communicative symbols are present in language-trained chimpanzees. (PsycINFO Database Record (c) 2010 APA, all rights reserved)