Neo Arithmetic and Ranking Techniques for Trapezoidal Generalized Interval Valued Fuzzy Numbers: Their Applications in Decision Making for Medical Investigation

Neural Processing Letters - The uncertainty caused mainly by the deficiency of precision and data, artificial/human-made errors, information accessed from expert opinions or very miniature size of...     

Design of a wideband microstrip antenna and the use of artificial neural networks in parameter calculation

This paper deals with the design of a multi-slot hole-coupled microstrip antenna on a substrate of 2 mm thickness that gives multi-frequency (wideband) characteristics. The Method of Moments (MoM)-based IE3D software was used to simulate the results for return loss, VSWR, the Smith chart, and the radiation patterns. A tunnel-based artificial neural network (ANN) was also developed to calculate the radiation patterns of the antenna. The radiation patterns were measured experimentally at 10.5 GHz and 12 GHz. The experimental results were in good agreement with the simulated results from IE3D and those of the artificial neural network. A new method of using a genetic algorithm (GA) in an artificial neural network is also discussed. This new method was used to calculate the resonant frequency of a single-shorting-post microstrip antenna. The resonant frequency calculated using the genetic-algorithm-coupled artificial neural network was compared with the analytical and experimental results. The results obtained were in very good agreement with the experimental results.     

Densification and Properties of α-Silicon Carbide

Densification of a-Sic powders with no premixed sintering aids (type 1) and with premixed B and C (type 2) was investigated by sintering them at 2150° to 2200°C for 30 min. Flexure strengths, Weibull moduli, and fracture flaws were characterized for type 2 α-SiC only. The results were compared with those for a state-of-the-art sintered a-Sic material.     

Effects of triiodothyronine (T3) supplementation upon ozone-induced lung injury

Ozone exposure results in an acute decrease in the serum levels of thyroid hormones; the physiologic sequelae of this are unclear. Whereas thyroid hormone supplementation appears to benefit pulmonary function in septic, oxyradical models of injury, thyroid hormone increases ozone toxicity. We demonstrated an increase in metabolic rate and pulmonary injury in lungs from ozone exposed, T3 treated animals. This was evidenced by an increase in pulmonary weight gain, vascular perfusion pressure, and decrease in compliance in the supplemented animals. However, an increase in alkane generation, as an index of lipid peroxidation, was not seen in the ozone exposed, hormonally treated animals. This suggests that although thyroid hormone supplementation increases metabolic rate and ozone toxicity, an increased rate of lipid peroxidation plays a minimal role.     

Surface tailoring of an ethylene propylene diene elastomeric terpolymer via plasma‐polymerized coating of tetramethyldisiloxane

In the research presented here, we explore the use of a low‐energy plasma to deposit thin silicone polymer films using tetramethyldisiloxane (TMDSO) (H(CH₃)₂? Si? O? Si? (CH₃)₂H) on the surface of an ethylene propylene diene elastomeric terpolymer (EPDM) in order to enhance the surface hydrophobicity, lower the surface energy and improve the degradation/wear characteristics. The processing conditions were varied over a wide range of treatment times and discharge powers to control the physical characteristics, thickness, morphology and chemical structure of the plasma polymer films. Scanning electron microscopy (SEM) shows that pore‐free homogeneous plasma polymer thin films of granular microstructure composed of small grains are formed and that the morphology of the granular structure depends on the plasma processing conditions, such as plasma power and time of deposition. The thicknesses of the coatings were determined using SEM, which confirmed that the thicknesses of the deposited plasma‐polymer films could be precisely controlled by the plasma parameters. The kinetics of plasma‐polymer film deposition were also evaluated. Contact angle measurements of different solvent droplets on the coatings were used to calculate the surface energies of the coatings. These coatings appeared to be hydrophobic and had low surface energies. X‐ray photoelectron spectroscopy (XPS) and photoacoustic Fourier‐transform infrared (PA‐FT‐IR) spectroscopy were used to investigate the detailed chemical structures of the deposited films. The optimum plasma processing conditions to achieve the desired thin plasma polymer coatings are discussed in the light of the chemistry that takes place at the interfaces. Copyright © 2004 Society of Chemical Industry     

Evaluation of refractive index approximations used for modedetermination in multiple quantum well slab waveguides

Approximations commonly used to determine the effective indexes of the guided modes of optical waveguides formed using multiple quantum well (MQW) materials are compared to the exact solutions in the slab waveguide model. Modeling the quantum well region as a single homogeneous layer with an average index of refraction is shown to produce results in close agreement with exact values of the effective index. A geometrically weighted average of the indexes provides the most accurate approximation for typical values of index and layer thickness of GaAs-Al_xGa_1-xAs quantum well waveguides     

Liquid phase epitaxial growth of pure and doped GaSb layers: morphological evolution and native defects

Undoped and Te-doped gallium antimonide (GaSb) layers have been grown on GaSb bulk substrates by the liquid phase epitaxial technique from Ga-rich and Sb-rich melts. The nucleation morphology of the grown layers has been studied as a function of growth temperature and substrate orientation. MOS structures have been fabricated on the epilayers to evaluate the native defect content in the grown layers from theC-V characteristics. Layers grown from antimony rich melts always exhibitp-type conductivity. In contrast, a type conversion fromp- ton- was observed in layers grown from gallium rich melts below 400 C. The electron mobility of undopedn-type layers grown from Ga-rich melts and tellurium doped layers grown from Sb- and Ga-rich solutions has been evaluated. Paper presented at the poster session of MRSI AGM VI. Kharagpur. 1995