0.25 μm gate length CMOS devices for cryogenic operation

Under cryogenic operation, a low V_th realizes a high speed performance at a greatly reduced power-supply voltage, which is the most attractive feature of Cryo-CMOS. It is very important in sub-0.25 μm Cryo-CMOS devices to reconcile the miniaturization and the low V_th. Double implanted MOSFET's technology was employed to achieve the low V_th while maintaining the short channel effects immunity. We have investigated both the DC characteristics and the speed performance of 0.25 μm gate length CMOS devices for cryogenic operation. The measured transconductances in the saturation region were 600 mS/mm for 0.2 μm gate length n-MOSFET's and 310 mS/mm for 0.25 μm gate length p-MOSFET's at 80 K. The propagation delay time in the fastest CMOS ring oscillator was 22.8 ps at V_dd=1 V at 80 K. The high speed performance at extremely low power-supply voltages has been experimentally demonstrated. The speed analysis suggests that the sub-l0 ps switching of Cryo-CMOS devices will be realized by reducing the parasitic capacitances and through further miniaturization down to 0.1 μm gate length or below     

Photocatalysts using hexa- and octa-titanates with different tunnel space for water decomposition

Photocatalytic activities for water decomposition were examined for photocatalysts using hexa- and octa-titanates and TiO2(B) with different tunnel space in the structure. Using RuO2 as promoter, M2Ti6O13 (M = Li, Na, K, Rb) showed the stoichiometric production of Hz and O₂ except for Li, whereas H₂Ti₈O₁₇ and TiO₂(B) had very low activity producing only hydrogen as a product. The effects of promoters on Na₂Ti₆O₁₃ showed that the activity increased in the order of RuO₂ > RuO₂ + IrO₂ > IrO₂ > RuO₂ + Pt > MnO₂. These effects along with other related ones are discussed: it emerges that the presence of the tunnels is important for the achievement of high photocatalytic activity.     

Effect of Sliding History on Super-Low Friction of Diamond-Like Carbon Coating in Water Lubrication

Water lubrication using diamond-like carbon (DLC) coatings is regarded as being a promising eco-friendly technology. However, it has been reported that delamination of DLC coatings occurs in water. The authors clarified that the application of friction in ambient air prior to self-mating DLC water lubrication, in addition to the suppression of DLC delamination, caused the friction coefficient to decrease more than when no processing is performed in the boundary lubrication region. When compared to the case when there was no pre-sliding, in terms of the wear scar, in this case, a much more hydrophilic and smoother surface was formed. Therefore, the friction-reducing process in water due to the presence of a sliding history (pre-sliding in ambient air) was clarified by an analysis of the DLC geometry, structure, chemical state and an in situ analysis that can measure the friction properties and the chemical state of DLC. We clarified that the process in which the oxidation and structural changes of the DLC proceed at the time of pre-sliding in ambient air using in situ Fourier transform infrared spectroscopy–attenuated total reflection. It was also revealed that the OH termination subsequently accelerated rapidly due to the friction in water after pre-sliding process. In addition, a time-of-flight secondary ion mass spectrometry analysis revealed that this OH group was derived from the lubricating water and unlike the case in which there was no pre-sliding in ambient air, the rate at which OH terminates increased considerably.     

Multifunctional Initiator with Platinum-Acetylide Dendritic Core for Living Polymerization of Isocyanides

A novel multifunctional initiator has been developed by peripheral modification of a Pt-acetylide dendrimer. Pd–Pt μ-ethynediyl units were introduced to the first-generation dendrimer by a divergent method. The dendritic initiator was applicable to the living polymerization of aryl isocyanides, producing high molecular weight polymers with a narrow polydispersity index in quantitative yields. The ³¹P NMR spectrum of the resulting polymer suggested that all Pd–Pt μ-ethynediyl units in the dendritic molecule actually functioned as an initiator.     

Preparation of Cu(In,Ga)(S,Se)2 thin films by sequential evaporation and annealing in sulfur atmosphere

Cu(In,Ga)(S,Se)₂ thin films with high Ga/III ratio (around 0.8) were prepared by sequential evaporation from CuGaSe₂, CuInSe₂, In₂Se₃ and Ga₂Se₃ compounds and then annealing in H₂S gas atmosphere. The annealing temperature was varied from 400 to 500 °C. These samples were characterized by means of XRF, EPMA, XRD and SEM. The S/(S+Se) mole ratio in the thin films increased with increase in the annealing temperature, keeping the Cu, In and Ga contents nearly constant. The open circuit voltage increased and the short circuit current density decreased with increase in the annealing temperature. The best solar cell using Cu(In,Ga)(S,Se)₂ thin film with Ga/(In+Ga)=0.79 and S/(S+Se)=0.11 annealed at 400 °C demonstrated V_oc=535 mV, I_sc=13.3 mA/cm², FF=0.61 and efficiency=4.34% without AR-coating.     

Experimental Demonstration of Novel High-Voltage Epilayer RESURF GaN MOSFET

We report on the experimental demonstration of a novel n-channel GaN epilayer RESURF GaN MOSFET with good tradeoff between breakdown voltage and specific on-resistance for the first time. Device with 4-mum channel length and 16-mum RESURF length has breakdown voltage up to 730 V with specific on-resistance 34 mOmegamiddotcm² (V_G - V_T = 20 V), best reported to date.     

Measurement and correlation of mutual diffusion coefficients for styrene-butadiene rubber(SBR)-n-nonane systems

The mutual diffusion coefficients for styrene-butadiene rubber(SBR)-n-nonane systems were measured using a sorption apparatus with a quartz spring at 100 and 130°C for mass fractions of n-nonane ranging from 0 to 0.16. The mutual diffusion coefficients were correlated with good agreement by the free-volume theory.     

A new sparse design framework for broadband power amplifier behavioral modeling and digital predistortion

In this paper, we propose a new sparse framework for the design of the behavioral model and digital predistorter of a broadband power amplifier (PA). We start by formulating the Volterra kernel to multidimensional memory polynomial by considering the high‐order dynamic truncation of the Volterra model. Then we show how an estimate of the most significant coefficients may be obtained using a matching pursuit (MPT) algorithm by exploiting the sparsity of the model. After the indices of the nonzero coefficients are roughly estimated, the block exact Householder inverse QR‐decomposition‐based recursive least squares (HIQRD‐RLS) algorithm is utilized to estimate the sparse model complex coefficients. For broadband nonlinear PAs, the proposed approach is demonstrated to achieve the best performance among the well‐known traditional approaches in terms of in‐band and out‐of‐band specifications. The proposed approach is also validated by evaluating the digital predistortion (DPD) performance on a Class‐AB PA in terms of adjacent channel power ratio (ACPR). © 2014 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.     

Three-dimensional beam propagation analysis of nonlinear opticalfibers and optical logic gates

A three-dimensional (3-D) beam propagation method is described for the analysis of nonlinear optical fibers, where the finite element and finite difference methods are, respectively, utilized for discretizing the fiber cross section and the propagation direction. For efficient evaluation of wide-angle beam propagation Pade approximation is applied to the differential operator along the propagation direction. In order to improve the efficiency and accuracy of solutions, isoparametric elements and numerical integration formulae derived by Hammer et al. are introduced. The propagation characteristics of nonlinear optical fibers with linear core and nonlinear cladding are analyzed, and unique features of nonlinear guided-wave propagation are investigated. Furthermore, all-optical logic gates with practical, 3-D geometry consisting of optical fibers and a nonlinear film are proposed, and their operations of Boolean arithmetic are demonstrated     

Thin films of Cu(In,Ga)Se2 and ordered vacancy compound prepared by thermal crystallization and their photovoltaic applications

Thin films of Cu–In–Ga–Se alloy system with various composition were prepared by thermal crystallization from In/CuInGaSe/In precursor. Electron probe microanalysis and X-ray diffraction study revealed that these samples were assigned to chalcopyrite Cu(In,Ga)Se₂ or ordered vacancy compound Cu(In,Ga)₂Se_3.5. Solar cell with ZnO:Al/i–ZnO/CdS/Cu(In,Ga)Se₂/Mo/soda-lime glass substrate structure was fabricated by using thermal crystallization technique, and demonstrated a 9.58% efficiency without AR-coating.