Simulation of Strength Distribution in Ground Ceramics by Incorporating Residual Stress Effect

Strength of ground ceramics may be affected by residual stress as well as surface flaws induced by grinding. Strength prediction for ground ceramics is convenient for mechanical design of ceramic components. In this article, a numerical procedure based on fracture mechanics was proposed to estimate strength distribution of ground ceramics by considering grinding-induced residual stress. Bending strength and residual stress of ground ceramics were measured for three grinding-conditions. By comparison of simulated results with experimental ones, it was revealed that strength characteristics in experiments were well simulated by using the proposed procedure.     

Thermal stability of reinforced Nb3Sn composite superconductor under cryocooled conditions

Several types of reinforced Nb₃Sn wires have been developed to prevent reduction of superconducting properties by applying a strong electromagnetic force. To fabricate a cryocooled magnet using those reinforced wires, we experimentally measured the minimum quench energy (MQE) under cryocooled conditions of some reinforced Nb₃Sn wires. As a result, it became clear that thermal stability expressed as MQE was controlled by the temperature margin between the temperature of the operating condition and the transition temperature from superconductivity to normal. Using the FEM analysis, it was realized that the cause of the decline in thermal stability for the reinforced wires was the low thermal conductivity of the reinforced materials.     

Radiation detector made of a high-quality polycrystalline diamond

Radiation detector was made of a high-quality CVD polycrystalline diamond composed of frost column like structure diamond grains, and induced charge distribution spectra and drift velocities were measured by using alpha particles. As a result, the CVD polycrystalline achieved maximum induced charge of 83% of HP/HT type IIa diamond. Moreover, the CVD crystal had lower charge loss on electrons compared with the HP/HT type IIa diamond. Drift velocities of electrons and holes were v_e = 7.7 × 10⁴ and v_h = 7.3 × 10⁴cm/s at an electric field of 20 kV/cm, respectively. In addition, response function measurement for 14 MeV neutrons was carried out.     

A floating-gate analog memory device for neural networks

A floating-gate MOSFET device that can be used as a precision analog memory for neural network LSIs is described. This device has two floating gates. One is a charge-injection gate with a Fowler-Nordheim tunnel junction, and the other is a charge-storage gate that operates as a MOSFET floating gate. The gates are connected by high resistance, and the charge-injection gate is small so that its capacitance is much less than that of the charge-storage gate. By applying control pulses to the charge-injection gate, it is possible to charge and discharge the MOSFET floating gate in order to modify the MOSFET current with high resolution over 10 b. The charge injection can be carried out without disturbing the MOSFET output current with high voltage control pulses. This device is useful for on-chip learning in analog neural network LSIs     

Evaluation of hydrological processes in a mountainous small basin using a quinone biomarker.

An applicability of quinone biomarker to the analysis of hillslope runoff was investigated. At first, quinone profiles of three streams as well as a hillslope runoff in a forested headwater catchment were compared. The quinone composition of hillslope runoff differed from others. Moreover, there were remarkable differences in quinone profile of hillslope runoff under different rainfall conditions. Then, the behavior of quinone biomarker during the increase and decrease of hillslope runoff after a rainfall event was examined. The fractional changes in Q-9 (H2), Q-10 (H2), Q-11, MK-6 and MK-10 suggested the effect of interflow.     

Transient analysis of an advanced static var compensator using quad-series voltage-source PAM inverters

This paper deals with an advanced static Var compensator (ASVC) using quad-series voltage-source PAM inverters. The ASVC consists of four three-phase voltage-source inverters with a common dc capacitor and four three-phase transformers, each primary winding of which is connected in series with each other. Each inverter outputs a square-wave voltage, while the synthesized output voltage of the ASVC has a 24-step wave shape. This results not only in a great reduction of harmonic currents and dc voltage ripples but also in fewer switching and snubbing losses. In this paper, transient analysis is performed with the focus on the response of reactive power and the resonance between the dc capacitor and ac reactors. Experimental results obtained from a small-rated laboratory model of 10 kVA are also shown to verify analytical results based on the p-q transformation. The analytical results help in the design of system parameters such as the capacity of the dc capacitor and feedback gains.     

Study on purple pigmentation in five cases with purple urine bag syndrome

We reported five patients with purple urine bag syndrome (PUBS). Four patients had indicanuria, and, in three of them, purple pigmentation was reproduced by inoculating urinary isolates, in the broth with indoxyl sulfate. Klebsiella pneumoniae, Pseudomonas aeruginosa and Enterococcus avium were considered to produce the purple pigment in three patients. However, attempts to reproduce the purple pigment failed in two patients, and one of them did not have indicanuria. These results suggest that indicanuria is not necessarily required for the development of PUBS.     

Development of 170 GHz/500 kW gyrotron

A development of 170GHz/500kW level gyrotron was carried out as R&D work of ITER. The oscillation mode is TE_31,8. In a short pulse experiment, the maximum power of 750kW was achieved at 85kV/40A. The efficiency was 22%. In the depressed collector operation, 500kW/36%/50ms was obtained. The maximum efficiency of 40% was obtained at P_RF=470kW whereas the power decrease by the electron trapping was observed. Pulse extension was done up to 10s at P_RF=170kW with the depressed collector operation. The power was limited by the temperature increase of the output window.     

Integrated optical devices of InGaAsP/InP heterojunction phototransistor and inner stripe light-emitting diode

New integrated optical devices combining an InGaAsP/InP HPT and an inner-stripe LED are proposed and their fabrication processes are described. The device functions of light amplification, optical bistability, and optical switching are demonstrated in the 1-μm wavelength region.