Piezoelectric properties in (K0.5Bi0.5)TiO3-(Na0.5Bi0.5)TiO3-BaTiO3 lead-free ceramics.

Lead-free piezoelectric ceramics with compositions around the morphotropic phase boundary (MPB) x(Na0.5Bi0.5)TiO3-y(K0.5Bi0.5)TiO3-zBaTiO3 [x + y + z = 1; y:z = 2:1] were synthesized using conventional, solid-state processing. Dielectric maximum temperatures of 280 degrees C and 262 degrees C were found for tetragonal 0.79(Na0.5Bi0.5)TiO3-0.14(K0.5Bi0.5)TiO3-0.07BaTiO3 (BNBK79) and MPB composition 0.88(Na0.5Bi0.5)TiO3-0.08(K0.5Bi0.5)TiO3-0.04BaTiO3 (BNBK88), with depolarization temperatures of 224 degrees C and 162 degrees C, respectively. Piezoelectric coefficients d33 were found to be 135 pC/N and 170 pC/N for BNBK79 and BNBK88, and the piezoelectric d31 was determined to be -37 pC/N and -51 pC/N, demonstrating strong anisotropy. Coercive field values were found to be 37 kV/cm and 29 kV/cm for BNBK79 and BNBK88, respectively. The remanent polarization of BNBK88 (approximately 40 microC/cm2) was larger than that of BNBK79 (approximately 29 microC/cm2). The piezoelectric, electromechanical, and high-field strain behaviors also were studied as a function of temperature and discussed.     

Phase-transition temperatures and piezoelectric properties of (Bi1/2Na1/2)TiO3-(Bi1/2Li1/2)TiO3-(Bi1/2K1/2)TiO3 lead-free ferroelectric ceramics.

The phase-transition temperatures and piezoelectric properties of x(Bi(1/2)Na(1/2))TiO3-y(Bi(1/2)Li(1/2))TiO3-z(Bi(1/2)K(1/2))TiO3 [x + y + z = 1] (abbreviated as BNLKT100(y)-100(z)) ceramics were investigated. These ceramics were prepared using a conventional ceramic fabrication process. The phase-transition temperatures such as depolarization temperatures T(d), rhombohedraltetragonal phase transition temperature T(R-T), and dielectric-maximum temperature T(m) were determined using electrical measurements such as dielectric and piezoelectric properties. The X-ray powder diffraction patterns of BNLKT100(y)-100(z)) show the morphotropic phase boundary (MPB) between rhombohedral and tetragonal at approximately z = 0.20, and the piezoelectric properties show the maximum at the MPB. The electromechanical coupling factor k(33), piezoelectric constant d(33) and T(d) of BNLKT4-20 and BNLKT8-20 were 0.603, 176 pC/N, and 171 degrees C, and 0.590, 190 pC/N, and 115 degrees C, respectively. In addition, the relationship between d33 and Td of tetragonal side and rhombohedral side for BNLKT4-100z and BNLKT8-100z were presented. Considering both high Td and high d(33), the tetragonal side of BNLKT4-100z is thought to be the superior composition. The d(33) and T(d) of BNLKT4-28 were 135 pC/N and 218 degrees C, respectively. Moreover, this study revealed that the variation of T(d) is related to the variation of lattice distortion such as rhombohedrality 90-alpha and tetragonality c/a.     

Relationship between the presence of side-holes in bone marrow aspiration needle and the number of harvested bone marrow mononuclear cells

The aim of this study was to evaluate the yield of nucleated cells in bone marrow harvested by means of Downs' Islam aspiration needles with or without side-holes. Twenty marrow donors for HLA identical sibling transplants were studied. Bone marrow nucleated cells were harvested 50 ml in the right iliac bone with a Downs' Islam aspiration needle with or without side-holes and 50 ml in the left with another kind of needle by means of 5 ml aspirations in each donor. There were no significant difference between the number of nucleated cells by means of Downs' Islam aspiration needles with and without side-holes by cross-over analysis. All nucleated cell counts were 33.06 +/- 12.93 x 10(3)/microliter (mean +/- standard deviation) by means of the needle with side-holes and 32.90 +/- 15.25 x 10(3)/microliter by means of the needle without side-holes. The Downs' Islam aspiration needle without side-holes seems to be better in bone marrow harvest from normal volunteers than that with side-holes, because the former may be stronger than the latter.     

Temperature dependences of piezoelectric properties of vanadium substituted SrBi2Nb2O9 ceramics with grain orientation

The temperature dependence of the piezoelectric properties of vanadium substituted strontium bismuth niobate, SrBi₂Nb_1.95V_0.05O₉ (SBNV) ceramics, were investigated in various vibration modes. The effects of grain orientation in SBNV ceramics on the piezoelectric properties were also studied by the hot-forging (HF) method. The anisotropy of the piezoelectric properties of each vibration mode was confirmed by observing the grain orientation. In particular, HF-SBNV ceramics of the (33) and (15) modes showed excellent piezoelectric properties with relatively high mechanical quality factors, Q_m (2200, 4600), and high electrical quality factors, Q_{e max} (66.0, 21.6), respectively. In addition, HF-SBNV ceramics showed low temperature coefficients of resonance frequency TC-f_r (−16.5, −27.0). HF-SBNV ceramics are considered to be superior candidates for the lead-free piezoelectric application of ceramic resonators.     

Ion beam modification of ePTFE for improving the blood compatibility

Expanded polytetrafluoroethylene (ePTFE), which is a durable biomaterial because of its excellent biological inertness, is now widely used for prostheses in clinical medicine. However, conversely, the inert nature of ePTFE results in poor adaptability to the surrounding tissue due to lack of a cell-adhesive property. In this study, the surface of ePTFE was modified with ion beam irradiation to improve the blood compatibility. The surface modification of ePTFE sheets by He⁺, Ne⁺, Ar⁺ and Kr⁺ ion beams was performed at an energy of 150 keV with fluences of 1 × 10¹⁴, 5 × 10¹⁴ and 1 × 10¹⁵ ions/cm². To investigate anti-thrombogenicity, Ca²⁺-replenished platelet-rich plasma (PRP) was placed in contact with the surfaces for 10 min. Compared to the non-modified ePTFE surface, platelet response was inhibited on the surfaces modified with He⁺, Ne⁺ and Ar⁺: 5 × 10¹⁴ and 1 × 10¹⁵ ions/cm², and Kr⁺: 5 × 10¹⁴ ions/cm²; however, platelet response was promoted on the surfaces modified with He⁺, Ne⁺ and Ar⁺: 1 × 10¹⁴ ions/cm², and Kr⁺: 1 × 10¹⁴ and 1 × 10¹⁵ ions/cm². The significant morphological changes in ePTFE surface associated with ion beam modification are thought to be one of the reasons for the inhibition of platelet response. Endothelial cells were cultured on the surfaces for 3 days to evaluate the cellular response. Endothelial cell growth was significantly promoted on all of the surfaces of ion beam-modified ePTFE, although the non-modified ePTFE surface dramatically inhibited this growth. It is concluded that ion beam modification of ePTFE surface can improve the blood compatibility through not only the promotion of endothelial cell growth but also the inhibition of platelet response.     

Neuronal synchronization and ionic mechanisms for propagation of excitation in the functional network of immortalized GT1-7 neurons: optical imaging with a voltage-sensitive dye

Immortalized gonadotropin releasing hormone (GnRH) neurons (GT1 cell line) in culture release GnRH in a pulsatile manner, suggesting that GT1 cells form a functional neuronal network. Optical imaging techniques and a voltage-sensitive fluorescent dye (RH795) were used to study the mechanism of neuronal synchronization and intercellular communication in cultured GT1-7 cells (one of the subclones of the GT1 cell line). The majority (79%) of GT1-7 cells in contact with one another revealed synchronized fluctuations in spontaneous neuronal activity. When a cell in contact with other cells was electrically stimulated, the evoked excitation was propagated to neighbouring cells. The ionic mechanisms involved in the propagation of electrical signals between interconnected GT1-7 cells were investigated using various blockers of Na+, Ca2+ and K+ channels. The propagation of stimulus-evoked excitation was prevented by the voltage-dependent Na+ channel blocker tetrodotoxin. It was also prevented by the voltage-dependent Ca2+ channel blockers, Ni+ (nonselective), nimodipine (L-type) and flunarizine (T-type > L-type), but not apparently affected by omega-agatoxin IVA (P- and Q-type) and omega-conotoxin MVIIA (N-type). The propagation was not influenced by the K+ channel blockers, quinine, tetraethylammonium and Ba2+, but in some cases, it was enhanced by 4-aminopyridine (4-AP) and prevented by apamin. These results suggest that voltage-dependent Na+ channels and L- and T-type Ca2+ channels are involved in the propagation of electrical signals in the GT1-7 neuronal network. Ionic mechanisms, through 4-AP- or apamin-sensitive K+ channels, also seem to be involved in the regulation of signal propagation. These mechanisms may underlie the functioning of the neuronal network formed by immortalized GnRH neurons.     

Improved performance of submicrometer-gate GaAs MESFETs with an Al0.3Ga0.7As buffer layer grown by metal organicvapor phase epitaxy

Submicrometer-gate MESFETs were fabricated with a GaAs active layer and an Al_xGa_1-xAs buffer layer grown by metalorganic vapor-phase epitaxy. To investigate the effect of buffer layer composition on device performance, microwave FETs with GaAs and Al _0.3Ga_0.7As buffer layers were compared. Electron Hall mobility in the n-GaAs active layer was found to be unaffected by the Al content or carrier concentration in the buffer layer. However, a considerable improvement in the maximum available gain to as much as 5.2 dB was obtained at 26.5 GHz for FETs with a p-Al_0.3Ga_0.7 As buffer layer; this was 1.5 dB higher than the gain obtained with a p-GaAs buffer layer. The improvement is due to a 20-30% reduction in both drain conductance and drain-gate capacitance