Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.     

Abnormal junction profile of silicided p+/n shallowjunctions: a leakage mechanism

The leakage mechanism in p⁺/n shallow junctions fabricated using Co silicidation and shallow trench isolation processes has been investigated using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and TSUPREM-4 simulation results show that dopant profiles bend upward near the edge of the active region. The formation of the abnormal profile is attributed to transient enhanced diffusion induced by source/drain implantation. Based on the TEM and simulation results, it is suggested that the shallower junctions formed near the active edge can serve as a source for leakage current in the silicided p+ /n shallow junctions     

Boundary element analysis of thermal stress intensity factors for interface griffith and cusp cracks

The thermal stress intensity factors for interface cracks of Griffith and symmetric lip cusp types under vertical uniform heat flow in a finite body are calculated by the boundary element method. The boundary conditions on the crack surfaces are insulated or fixed to constant temperature. The relationship between the stress intensity factors and the displacements on the nodal point of a crack-tip element is derived. The numerical values of the thermal stress intensity factors for an interface Griffith crack in an infinite body are compared with the previous solutions. The thermal stress intensity factors for a symmetric lip cusp interface crack in a finite body are calculated with respect to various effective crack lengths, configuration parameters, material property ratios and the thermal boundary conditions on the crack surfaces. Under the same outer boundary conditions, there are no appreciable differences in the distribution of thermal stress intensity factors with respect to each material property. However, the effect of crack surface thermal boundary conditions on the thermal stress intensity factors is considerable.     

A practical SPICE model based on the physics and characteristics of realistic single-electron transistors

A practical model for a single-electron transistor (SET) was developed based on the physical phenomena in realistic Si SETs, and implemented into a conventional circuit simulator. In the proposed model, the SET current calculated by the analytic model is combined with the parasitic MOSFET characteristics, which have been observed in many recently reported SETs formed on Si nanostructures. The SPICE simulation results were compared with the measured characteristics of the Si SETs. In terms of the bias, temperature, and size dependence of the realistic SET characteristics, an extensive comparison leads to good agreement within a reasonable level of accuracy. This result is noticeable in that a single set of model parameters was used, while considering divergent physical phenomena such as the parasitic MOSFET, the Coulomb oscillation phase shift, and the tunneling resistance modulated by the gate bias. When compared to the measured data, the accuracy of the voltage transfer characteristics of a single-electron inverter obtained from the SPICE simulation was within 15%. This new SPICE model can be applied to estimating the realistic performance of a CMOS/SET hybrid circuit or various SET logic architectures.     

A WDM-PON Employing Fabry–PÉrot Laser Diodes Without a Seed Light Injection

We propose and demonstrate a wavelength-division-multiplexed passive optical network by employing double-contact Fabry-Perot laser diodes (F-P LDs) without a seed light injection. To avoid the high mode partition noise at low frequency, we use a binary phase-shift keying as a modulation format at a low relative intensity noise window. An error-free transmission is achieved by compensating a lasing envelope shift due to temperature variation with the double-contact F-P LD.     

A priori ordering protocols to support consensus-building in multiple stakeholder contexts

In a complex social, political, economic, technological, and/or environmental context, corporate, military, government, and other organizations are often faced with collective decision-making situations. The rationale for group decision exercises is that the judgment of many will usually prove superior to the judgment of one. However, it has been shown that collective decision exercises are often highly dependent on matters of perspective, values and opinion, all of which - being essentially subjective in nature - are beyond the reach of existing formal decision technology. Furthermore, it can be expected that many collective decision exercises - particularly those of strategic import - will not lend themselves to the quantitative analysis instruments that have long dominated the management and decision science repertoire. This does not, however, mean that they must remain entirely and forever outside the bounds of scientific rationality. The ordering protocols which are currently available do not have enough technical mechanics to be relied upon to bring us to any satisfying resolution of a priori disputation. Hence, we propose an a priori ordering reference model that might support consensus-building in a multiple stakeholders context. In order to detect whether the subjective arguments are products of proper reasons or merely instances of raw rhetoric and to suggest how any logical or syntactical flaws might best be repaired, we propose logical ordering facilities and protocols for integrating procedural and instrumental provisions for a group-decision process with two lines of technical innovation: the superimpositional ordering function and the logical ordering support facilities.     

Expert system approach for reactor vessel integrity

This paper describes the development strategy of a prototype expert system, called RViES, for the reactor vessel integrity. The main objectives of the system are to assist engineers to perform fatigue and fracture mechanics analyses of reactor vessels quickly and accurately. The system consists of three parts; user interface, knowledge base and inference engine. Various rules recommended in codes and standards are stored in the knowledge base. Several case studies were performed to check the usefulness of the system.