Low Temperature Characteristics of the Metal–Superconductor NIS Tunneling Thermometer

We discuss the temperature dependence of a common low temperature local thermometer, a tunnel junction between a superconductor and a normal metal (NIS junction). Towards the lowest temperatures its characteristics tend to saturate, which is usually attributed to selfheating effects. In this technical note, we reanalyze this saturation and show that the temperature independent subgap current of the junction alone explains in some cases the low temperature behavior quantitatively.

     

Polymers dynamics of the nonfluoro,nano-brush repelling agent with self-stratifying property in water-based coatings

While perfluoroalkyl acids (PFAAs), also known as C8s, are used extensively in textile repellent coatings, concerns have arisen for their carcinogenicity and hazardous effects on the environment. In this study, a novel water-based, nonfluoro, and nanobrush textile repelling agent was prepared by conventional sol–gel chemistry using amorphous fumed silica and n-octyltriethoxysilane as the starting materials. Minimal interaction between the designed repelling agent and marketed water-based resins was confirmed using linear viscosity region (LVR) analysis and asymmetric-flow field-flow fractionation (AF4), suggesting the self-stratification potential of the repelling agent. More specifically, the repelling agent exhibited excellent compatibility and self-stratifying ability with a force-emulsified acrylic-based resin, affording a water contact angle of 104.3° when incorporated at 7% solid content. Performance tests carried out on thermoplastic polyurethane (TPU) revealed excellent adhesion (100/100) of a final formulation, and a significant increase in water contact angle from 80.1° to 103.8° after treatment. In addition, the fouling area after the removal of a submerged sample from a mixture of slurry, polymer, and oil decreased from 48 to 1% when the repelling agent was added. Moreover, the sludge-fouling property remained unchanged after 1000 cycles of abrasion. These findings demonstrate the potential of the described nonfluoro, nanobrush repelling agent as an environmentally safe alternative for use with commercial resins, in turn realizing a fully water-based hydrophobic coating. © 2019 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2019 , 136, 48003.     

Synthesis and Characterization of Pr0.6-xNdxCa0.4FeO3-δ with Pechini Method

Pr0.6-x NdxCa0.4 FeO3-δ （ x = 0.0, 0.2, 0.3, 0.4, 0.5, 0.6） were synthesized using Pechini method. A number of studies were conducted concerning composition, specific area, crystalline structure and microstructure of the samples by means of FT-IR, BET, XRD TG-DTA and SEM. The results show that all the samples with different doping amounts of Pr^3＋ and Nd^3＋ on A-site are fine dispersed, and mean particle size less than 100 nm. The powders have good sinterability, and the relative density is 95% after sintered at 1200 ℃ for 2 h. It is found that all specimens are entirely single phase solid solutions with orthorhombic perovskite structure, the stable perovskitetype phase is formed completely after calcination at 900 ℃.     

循环伏安法在润滑油检测中的应用

介绍了循环伏安法的产生背景、原理。应用该技术可以快速、方便地对润滑油中抗氧剂、总酸（碱）值进行测定，并且可以对不同厂家润滑油的抗氧剂包进行区别。该技术还可以有效地评价润滑油的使用寿命和设备工作状况。     

Magnetic effects of direct ion implantation of Mn and Fe into p-GaN

In p-GaN implanted with Mn (3×10¹⁶ cm⁻² at 250 keV), the material after annealing shows ferromagnetic properties below 250 K. Cross-sectional transmission electron microscopy (TEM) revealed the presence of platelet structures with hexagonal symmetry. These regions are most likely Ga_xMn_1−xN, which produce the ferromagnetic contribution to the magnetization. In p-GaN implanted with Fe, the material after annealing showed ferromagnetic properties at temperatures that were dependent on the Fe dose, but were below 200 K in all cases. In these samples, TEM and diffraction analysis did not reveal any secondary phase formation. The results for the Fe implantation are similar to those reported for Fe doping during epitaxial growth of GaN.