Hot carrier analysis in low-temperature poly-Si thin-film transistors using pico-second time-resolved emission microscope

We have analyzed degradation of N-channel thin-film-transistor (TFT) under dynamic stress using a pico-second time-resolved emission microscope. We have successfully detected emission at pulse fall edge for the first time. Emission intensity increased with the decrease of pulse fall time. As the degradation depended on the pulse fall time, this dependence clearly illustrates that hot electrons are the dominant cause of the degradation under dynamic stress. Based on these dependences, we proposed a model considering electron traps in the poly-Si.     

Development of 170 GHz/500 kW gyrotron

A development of 170GHz/500kW level gyrotron was carried out as R&D work of ITER. The oscillation mode is TE_31,8. In a short pulse experiment, the maximum power of 750kW was achieved at 85kV/40A. The efficiency was 22%. In the depressed collector operation, 500kW/36%/50ms was obtained. The maximum efficiency of 40% was obtained at P_RF=470kW whereas the power decrease by the electron trapping was observed. Pulse extension was done up to 10s at P_RF=170kW with the depressed collector operation. The power was limited by the temperature increase of the output window.     

Evaluation technique of gate oxide damage

Gate oxide damage by plasma processing was evaluated using structures with various antenna lengths. The gate oxide damage by plasma processing was found to be monitored quantitatively by measuring the charge to breakdown, Q_BD. From the Q_BD measurements, we have confirmed that the degradation occurs during overetching, not in main etching. Plasma current was calculated from the decrease of Q_BD during the etching. The breakdown spot in the gate oxide was detected by photon emission and TEM. The LOCOS structure plays an important role for the degradation by plasma damage. In this paper, it is demonstrated that the Q_BD method is effective for realizing a highly reliable process against plasma damage     

Failure analysis of ULSI circuits using photon emission

A real-time failure analysis technique for ULSI circuits using photon emission is proposed. This technique utilizes a photon detection system combined with a circuit tester. Improved failure detection is achieved because the tester can bias arbitrary blocks in the ULSI chip. Detecting and correct process defects and design errors improves the reliability of the ULSI chip     

Chemical response of Picea glehnii seed-epiphytic Penicillium species to Pythium vexans under in vitro competitive conditions for mycelial growth

The potential protection of Picea glehnii seedlings from damping-off by seed-epiphytic Penicillium species was investigated. We studied the chemical response of seed-epiphytic Penicillium species (Pen. cyaneum, Pen. damascenum, and Pen. implicatum) to Pythium vexans, a damping-off fungus, in vitro. Penicillium species were cultured singly or cocultured with Pyt. vexans for 14 or 18 d, and mycelial growth, pH of culture filtrate, antifungal activity of the culture filtrate against Pyt. vexans, and the amount of antifungal compound produced by each Penicillium species, were examined. The filtrate of both the single culture of Penicillium and the coculture of Penicillium and Pyt. vexans showed antifungal activity against Pyt. vexans. In a coculture with Pyt. vexans, Pen. cyaneum produced an antifungal compound (patulin) as in the single culture. Pen. damascenum cocultured with Pyt. vexans produced an antifungal compound (citrinin), as it did in the single culture and in larger amounts on day 10. Pen. implicatum produced two antifungal compounds, frequentin and palitantin, and the ratio of frequentin (with higher antifungal activity than palitantin) to palitantin was higher in the coculture with Pyt. vexans than in the single culture. Our results indicate that these Penicillium species have the ability to produce antifungal compounds and to keep antifungal activity under competitive condition with Pyt. vexans. The chemical response of these Penicillium species to Pyt. vexans may contribute to protect P. glehnii seedlings from damage by Pyt. vexans.     

Capacitance-voltage and leakage-current characteristics of sol-gel-derived crystalline and amorphous SrTa2O6 thin films

SrTa₂O₆ (STA) is a promising high-dielectric-constant (ε) material. In this study, STA thin films were fabricated using the sol-gel method. The capacitance-voltage and leakage-current characteristics of crystalline and amorphous STA thin-film capacitors were investigated. STA thin films crystallized at an annealing temperature of 800 °C. Crystalline STA thin films exhibited a high ε of about 110, whereas amorphous STA thin films showed a much lower ε of about 26-41. However, amorphous STA thin films had a much more constant capacitance as a function of voltage. Of the amorphous thin films, the one annealed at 700 °C had the highest ε of about 41, the lowest leakage current of 10^− 8 A/cm², and a very constant capacitance as a function of voltage with a quadratic voltage-capacitance coefficient (α) of 27 ppm/V². The crystalline STA thin film had a negative α that was independent of frequency, which suggests that dipolar relaxation occurs and is responsible for the large change in the capacitance. The amorphous thin films had a positive α that decreased with increasing frequency, which implies that electrode polarization occurs.     

Thermal Degradation Under Pulse Operation in Low-Temperature p-Channel Poly-Si Thin-Film Transistors

We analyzed the heat generation of a low-temperature polycrystalline thin-film transistor in pulse operation and proposed a technique for accurately measuring its thermal temperature in high-frequency operation. From this measurement, we were able to calculate the time constants for heating and radiation for the first time. At a low frequency, the temperature difference between when the pulse was on and off was remarkable. As the frequency was increased, the maximum and minimum temperatures approached each other and became equal at a frequency of approximately 1 kHz. We also measured the degradation in pulse operation and discussed the relationship between the thermal temperature and the degradation in the pulse operation     

Evidence of Oxygen Ferromagnetism in ZnO Based Materials

Discoveries of room‐temperature ferromagnetism (RTFM) in semiconductors hold great promise in future spintronics technologies. Unfortunately, this ferromagnetism remains poorly understood and the debate concerning the nature, carrier‐mediated versus defect‐mediated, of this ferromagnetism in semiconducting oxides is still open. Here, by using X‐ray absorption (XAS) and X‐ray magnetic circular dichroism (XMCD), it is demonstrated that the oxygen ions have a ferromagnetic response in different ZnO‐based compounds showing RTFM behavior: ZnO nanoparticles capped with organic molecules and ZnO/ZnS heterostructures. These results demonstrate the intrinsic occurrence of RTFM in these systems, and point out that it is not related to the metallic cation but it relays on the conduction band of the semiconductor.