两步固态发酵生产豆豉纤溶酶的研究

枯草芽孢杆菌DC-12是从豆豉中筛选得到的高产纤溶酶菌株。以黑豆为原料,曲霉前发酵制得豆豉半成品,研究以该半成品为基质的豆豉纤溶酶的固态发酵条件优化。结果表明,枯草芽孢杆菌DC-12的最佳固态发酵条件为:豆豉半成品35g/250mL三角瓶,葡萄糖8.0%,初始含水量1.2mL/g(豆豉半成品),初始pH值7.0,接种量12%,培养温度30℃,培养时间84h,优化条件下的平均产酶量达1427 IU·g-1(豆豉半成品),为未优化前酶活的3.60倍。     

LED照明产品加速衰减试验方法研究

With the application of energy-saving, environmental and durable LED lighting products, the reliability testing has become a pivot point for the large scale industrialization and popularization. The paper briefly introduces two methods to be respectively applied in the accelerated depreciatinn lesting for the luminous flex of LED lighting products and the life of outdoor LED-driving power, which can sharply shorten the time for lifetime lest. providing references for the LED lighting products＇ reliability evaluation.     

初始层生长条件和Mg活性剂对MOVPE方法生长GaN薄膜质量的影响

The initial growth conditions of a 100 nm thick GaN layer and Mg-surfactant on the quality of the GaN epilayer grown on a 6H-SiC substrate by metal-organic vapor phase epitaxy have been investigated in this research. Experimental results have shown that a high Ⅴ/Ⅲ ratio and the initially low growth rate of the GaN layer are favorable for two-dimension growth and surface morphology of GaN and the formation of a smoother growth surface. Mg-surfactant occurring during GaN growth can reduce the dislocations density of the GaN epilayer but increase the surface RMS, which are attributed to the change of growth mode.     

LED照明产品加速衰减试验方法研究（英文）

With the application of energy-saving, environmental and durable LED lighting products, the reliability testing has become a pivot point for the large scale industrialization and popularization. The paper briefly introduces two methods to be respectively applied in the accelerated depreciation testing for the luminous flex of LED lighting products and the life of outdoor LED-driving power, which can sharply shorten the time for lifetime test, providing references for the LED lighting products' reliability evaluation.     

Si衬底上侧向外延生长GaN的研究

采用条形Al掩模在Si(111)衬底上进行了GaN薄膜侧向外延的研究.结果显示,当掩模条垂直于Si衬底[11-2]方向,也即GaN[10-10]方向时,GaN无法通过侧向生长合并得到表面平整的薄膜;当掩模条平行于Si衬底[11-2]方向,也即GaN[10-10]方向时,GaN侧向外延速度较快,有利于合并得到平整的薄膜.同时,研究表明,升高温度和降低生长气压都有利于侧向生长.通过优化生长工艺,在条形Al掩模Si(111)衬底上得到了连续完整的GaN薄膜.原子力显微镜测试显示,窗口区域生长的GaN薄膜位错密度约为1×109/cm2,而侧向生长的GaN薄膜位错密度降低到了5×107/cm2以下.     

大块非晶合金Zr55Cu30Al10Ni5的电子结构特征及电击穿行为

测定了大块非晶合金Zr55Cu30Al10Ni5晶化前后的费米能级和各元素的电子结合能,研究了非品合金的电子结构特征和电击穿行为．测试并讨论了非晶材料场发射能力和耐电压强度的关系．结果表明,对于Zr基合金,非品态比品态合金具有更大的功函数．比较了Zr55Cu30Al10Ni5合金非晶态与晶态的耐电压强度数值,发现非晶态合金的耐电压强度数值比较分散,品化合金的耐电压强度相对比较集中．耐电压强度平均值表明,Zr基合金非晶态具有更好的耐电压能力．