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排序方式: 共有378条查询结果,搜索用时 15 毫秒
1.
E. A. Gurieva P. P. Konstantinov L. V. Prokof D. A. Pshenaĭ-Severin M. I. Fedorov Yu. I. Ravich 《Semiconductors》2006,40(7):763-767
The coefficients of thermopower and electrical and thermal conductivity in the PbTe0.8Se0.1 S 0.1 solid solution with electron concentration (4.6–54) × 1018 cm?3 are studied in the range of 85–300 K (and in some cases up to 700 K). The temperature dependences of electrical and thermal conductivity indicate that the low-temperature electron and phonon scattering initiated by the off-center impurity of sulfur exists. The temperature dependences of the electronic and lattice components of thermal conductivity are calculated in the approximation of a parabolic spectrum and electron scattering by acoustic phonons and neutral substitutional impurities. The lattice thermal conductivity is found to have a feature in the form of a shallow minimum in the range of 85–250 K. A similar feature, while not so clearly pronounced, is found to exist also in Pb1?x SnxTe1?x Sex alloys (x≥0.15) with an off-center tin impurity. An analysis of the possible origins of this effect suggests that, at low temperatures, the Lorentz numbers L of the materials under study are smaller than the L0 numbers employed which correspond to the above scattering mechanisms. The cause of the decrease in L is related to electron scattering at two-level systems, a mechanism whose effect grows with increasing electron energy. An analysis of experimental data obtained at high temperatures, as well as on undoped samples with the lowest possible carrier concentrations, yields the values of L for samples with different electron densities. The minimum value L/L0 = 0.75 is obtained for a lightly doped sample at ~130 K. 相似文献
2.
SA Khotimchenko VM Kodentsova IA Alekseeva SG Vlaskina OA Vrzhesinskaia AA Sokol''nikov LA Kharitonchik IP Aleshko-Ozhevskií LV Sheviakova 《Canadian Metallurgical Quarterly》1997,43(3):158-164
Gamma delta T-Cells represent a minor subpopulation of T-lymphocytes in man and their role in normal and diseased human skin is unknown. This article is a comprehensive review of T-lymphocytes bearing the gamma delta T-cell receptor in normal and pathological human skin. Firstly, we have documented the occurrence of gamma delta T-cells in normal skin and in a range of reactive and malignant skin conditions. We have then discussed the experimental findings regarding the repertoire used by gamma delta T-cells in normal human skin and in cutaneous disorders with an increased percentage of gamma delta T-cells. 相似文献
3.
Features of complex waves excited in nonreciprocal guiding structures are considered in the case of a round shielded waveguide with a longitudinally magnetized axial ferrite core. 相似文献
4.
IuP Spizhenko AV Biliaiev AM Zaremba IV Nahorny? AP Tkachenko 《Canadian Metallurgical Quarterly》1997,43(5-6):42-48
Investigated all links of oxygen homeostasis of patients in early period afterwards surgical stoppage gastro-intestinal bleeding and urgent intravascular volume replacement. Macrodelivery of oxygen (DO2) was reduced in two and more time in comparison with norm predominant in connection with anemia. In spite of the infringement of transport of oxygen through alveolar-capillary membrane (especially in patients with complications and death in early postoperative period), little affected of degree of hemoglobin saturation by oxygen. Despite decrease of erythrocyte zeta-potential, largely expressed in cases of lethal outcome, considerable infringement of passage through microcirculation vessels is fixed was not. The increase of degree of morbidity and anaerobic metabolism in early postoperative period was accompanied of hyperdynamic hemodynamic reaction. The increase of degree of morbidity was accompanied of increase oxygen deficit owing to infringement of oxidoreduction in fabries also. 相似文献
5.
A. A. Nechitaĭlov T. K. Zvonareva A. D. Remenyuk V. A. Tolmachev D. N. Goryachev O. S. El’tsina L. V. Belyakov O. M. Sreseli 《Semiconductors》2008,42(10):1249-1254
Catalytic properties of composite amorphous carbon-platinum layers produced by magnetron cosputtering have been studied. The layers were characterized by electron microscopy, IR spectroscopy, ellipsometry, gravimetry, and spectrophotometric chemical analysis. The catalytic activity of the layers was studied in an air-hydrogen fuel cell by measuring its load and power characteristics. 相似文献
6.
B. P. Mikhaĭlov I. A. Rudnev P. V. Bobin A. R. Kadyrbaev A. B. Mikhaĭlova S. V. Pokrovskiĭ 《Technical Physics Letters》2006,32(10):901-903
We present the results of investigation of the magnetic, transport, structural, and mechanical properties of composites obtained by introducing finely dispersed zirconium nitride into a matrix of a Bi2Sr2Ca2Cu3O10 + δ (Bi2223) high-temperature superconductor. It is established that the introduction of ZrN particles in the range of very small concentrations (0.1–0.3 wt %) leads to a significant (more than threefold) increase in the critical current density of Bi2223 and increases the density of the composite, while the microhardness of the superconducting phase remains unchanged. 相似文献
7.
V. V. Vasil’ev S. A. Dvoretskiĭ N. N. Mikhaĭlov D. Yu. Protasov R. N. Smirnov 《Technical Physics Letters》2006,32(9):802-805
The first results on the formation of n +-p photodiodes with a long-wavelength boundary at λ0.5 = 10.6 μm based on p-CdHgTe epilayers with a hole density of 3.3 × 1014 cm?3 are presented. The CdHgTe layers were obtained by molecular beam epitaxy and exhibited p-type conduction in the as-grown state. The hole density and mobility were determined by means of the mobility spectrum technique. The photodiode structures were prepared by B+ ion implantation into as-grown p-CdHgTe epilayers without additional annealing. The R 0 A product for the n +-p photodiodes obtained is about 20 Θ cm2 at 77 K. 相似文献
8.
V. V. Randoshkin N. V. Vasil’eva V. N. Kolobanov V. V. Mikhaĭlin N. N. Petrovnin D. A. Spasskiĭ N. N. Sysoev M. I. Timoshechkin 《Technical Physics Letters》2006,32(11):958-959
The spectra of luminescence induced by synchrotron radiation in the fundamental absorption range were measured at 10 and 300 K for Czochralski-grown bulk Y3Al5O12 single crystals doped with Tb3+ ions and for (Tb,La,Gd)3Ga5O12 single crystal films grown by liquid phase epitaxy from a PbO-B2O3 based supercooled solution melt on Gd3Ga5O12 substrates. 相似文献
9.
T. I. Voronina T. S. Lagunova M. P. Mikhaĭlova K. D. Moiseev A. F. Lipaev Yu. P. Yakovlev 《Semiconductors》2006,40(5):503-520
The results of detailed study of the magnetotransport properties of broken-gap type II heterojunctions in a GaInAsSb/InAs(GaSb) system are reported. An electron channel with a high charge-carrier mobility (as high as 50000–60000 cm2/(V s)) is observed and studied for the first time in an isotype broken-gap p-GaInAsSb/p-InAs heterostructure. The effects of electron-channel depletion and semimetal-semiconductor transition in the case of heavy doping of the quaternary alloy with acceptors are studied. Magnetotransport properties at temperatures of 4.2–200 K are studied in detail. Data on the energy spectrum and parameters of two-dimensional charge carriers at the heteroboundary are obtained. It is ascertained experimentally that, depending on the composition, either staggered (at x = 0.85) or broken-gap (at x = 0.95) heterojunctions can be formed in the Ga1?x InxAsySb1?y /GaSb, which is confirmed by theoretical calculations. The anomalous Hall effect and negative magnetoresistance were observed in GaInAsSb/InAs:Mn grown on substrates doped heavily with Mn magnetic acceptor impurity so that the hole concentration was as high as p > 5 × 1018 cm?3; these phenomena are caused by exchange interaction of Mn ions in InAs with high-mobility charge carriers in the electron channel at the heterointerface. 相似文献
10.
Insulating c-oriented hexagonal epitaxial gallium nitride (GaN) films have been obtained by means of pulsed laser sputtering of a gallium target in nonactivated nitrogen atmosphere. The GaN films were deposited onto (0001)-oriented sapphire substrates either directly or above a ZnO buffer layer. The laser-deposited films exhibit edge photoluminescence at 370 nm. 相似文献