Intramolecular crosslinking of poly(vinyl alcohol)

Poly(vinyl alcohol) is crosslinked in dilute solution (c=0.1 wt%) with glutaraldehyde. The reaction product is characterized by viscometry and gel permeation chromatography (g.p.c.). The intrinsic viscosity decreases with increasing degree of crosslinking and does not depend on temperature. G.p.c. reveals that the reaction product is not homogeneous, but consists of a mixture of particles with different sizes, possibly both intra- and intermolecularly crosslinked molecules. The intramolecularly crosslinked molecules are smaller in size than the initial polymer molecules and their size depends on the degree of crosslinking. They possess a narrow particle size distribution even if the initial polymer sample had a broad molecular weight distribution.     

Detection of failure sites by focused ion beam and nano-probing in the interconnect of three-dimensional stacked circuit structures

Focused ion beam (FIB) and nano-probing were applied for failure analysis of three-dimensional stacked circuits with copper through-silicon-vias between the stacked chips. The failure analysis was done after high temperature storage and thermal cycling tests. Passive voltage contrast in FIB allowed to pinpoint the open sites. FIB cross-sections showed the presence of opens at the bottom of the copper vias. The failure cause was suspected to be an interlayer particle, which was confirmed by optical profilometry. Nano-probing was used on another sample to pinpoint the failure location through the measurement of the local resistance within the daisy chains. The failure was traced out to be related with surface contamination.     

Functionalization of PVC by grafting of plasticizing group in a twin screw extruder

Substitution reactions are an appropriate way to attach chemical functions to polymer chains for improving properties and to diversify the application of polymer materials. The stereoselective substitution of chlorine atoms affords a useful way to plasticize polyvinychloride (PVC) by attaching appropriate plasticizing functions (ester group) such as isooctylthiosalicylate. Thus, the substitution of chlorine atoms of PVC by reactant bearing plasticizing groups was carried out in a continuous mixing apparatus such as a twin screw extruder. This continuous chemical engineering process taking place in the extruder is studied as the function of the residence time distribution (RTD) measured by a UV method. This function combined with the kinetics of the chemical reaction allows to define a new function G as the distribution of the extent of conversion by analogy with the RTD function.     

Adaptive isogeometric analysis by local h-refinement with T-splines

Isogeometric analysis based on non-uniform rational B-splines (NURBS) as basis functions preserves the exact geometry but suffers from the drawback of a rectangular grid of control points in the parameter space, which renders a purely local refinement impossible. This paper demonstrates how this difficulty can be overcome by using T-splines instead. T-splines allow the introduction of so-called T-junctions, which are related to hanging nodes in the standard FEM. Obeying a few straightforward rules, rectangular patches in the parameter space of the T-splines can be subdivided and thus a local refinement becomes feasible while still preserving the exact geometry. Furthermore, it is shown how state-of-the-art a posteriori error estimation techniques can be combined with refinement by T-splines. Numerical examples underline the potential of isogeometric analysis with T-splines and give hints for further developments.     

Control over the parameters of InAs-GaAs quantum dot arrays in the Stranski-Krastanow growth mode

The effect of the growth temperature on the density, lateral size, and height of InAs-GaAs quantum dots (QD) has been studied by transmission electron microscopy. With the growth temperature increasing from 450 to 520°C, the density and height of QDs decrease, whereas their lateral size increases; i.e., the QDs are flattened. The blue shift of the photoluminescence line indicates decreasing QD volume. The observed behavior is in agreement with the thermodynamic model of QD formation. The effect of lowering the substrate temperature immediately after the formation of QDs on the QD parameters has been studied. On lowering the temperature, the lateral size of QDs decreases and their density increases; i.e., the parameters of QD arrays tend to acquire the equilibrium parameters corresponding at the temperature to which the cooling is done. The QD height rapidly increases with cooling and may exceed the equilibrium value for a finite time of cooling, which enables fabrication of QD arrays with a prescribed ratio between height and lateral size by choosing the time of cooling.     

Formation of dislocation defects in the process of burying of InAs quantum dots into GaAs

Evidence given by electron microscopy of dislocation relaxation of stresses near InAs quantum dots buried into GaAs is presented. It was found that dislocation defects not emerging to the film surface are formed in some buried quantum dots. This suggests that stress relaxation occurs in the buried state of the quantum dot, rather than at the stage of the formation and growth of an InAs island on the GaAs surface. Models of internal dislocation relaxation of buried quantum dots are presented.     

Electron traps in thin layers of low-temperature-grown gallium arsenide with As-Sb nanoclusters

Electron traps in low-temperature-grown ～40-nm-thick GaAs layers containing nanometer As-Sb clusters have been studied using deep-level transient spectroscopy. Measurements at various bias voltages and small-amplitude filling pulses have allowed the identification of two groups (T1 and T2) of traps with substantially different thermal electron emission rates. It is shown that the density of traps T2 (with an activation energy of 0.56 ± 0.04 eV and electron capture cross section of 2 × 10^?13?10^?12cm²) is ～2 × 10¹²cm_?2, while the density of traps T1 (0.44 ± 0.02 eV and 2 × 10^?14?10^?13 cm², respectively) is ten times lower. It is assumed that, according to the existence of the two cluster groups observed in the layers under study, traps T2 are associated with clusters 4–7 nm in diameter and traps T1, with clusters up to ～20 nm in diameter.     

Matching degradation of threshold voltage and gate voltage of NMOSFET after Hot Carrier Injection stress

Device degradation modelling is more and more important for reliable circuit design. On MOSFET, the threshold voltage drift in time can lead to circuit performance degradation. In this study, V_T shift due to Hot Carrier Injection stress is accelerated on small width devices. V_T matching is also degraded during stress as a function of V_T deterioration. This width dependence allows explaining gate voltage matching behavior in the sub-threshold area used in low power analog applications.