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A high‐performance ambipolar light‐emitting transistor (LET) that has high hole and electron mobilities and excellent luminescence characteristics is described. By using this device, a conspicuous light‐confined edge emission and current‐density‐dependent spectral evolution are observed. These findings will result in broader utilization of device potential and they provide a promising route for realizing electrically driven organic lasers.  相似文献   
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Effects of extrusion and drum‐drying treatments on physico‐functional and antioxidant properties of flours prepared from purple‐flesh sweet potato were evaluated. Extrusion variables were feed moisture contents (MC; 10%, 13%, 16%) and screw speeds (SS; 250, 325, 400 r.p.m.), whereas drum‐drying was done at 120, 130 or 140 °C. Effects of MC were generally greater than SS on flour properties. Extruded flours showed higher water absorption and water solubility indices compared with control nonextruded flours. Regardless of SS, total phenolic content and antioxidant activities (DPPH and ABTS) of flours processed at 10% MC were significantly higher than those at 13% and 16%. Both extruded and drum‐dried flours exhibited no peak viscosity, indicating complete gelatinisation of starch. Maximum phenolic content and antioxidant activities of drum‐dried flours were obtained at 140 °C. Although drum‐dried flours had higher antioxidant capacity than extruded flours, both flours could potentially be used as food ingredients.  相似文献   
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We report a novel concept for multi-color light emission from an ambipolar organic single-crystal transistor using natural optical waveguides, the self-absorption effect, Davydov splitting and the unique alignment of the transition dipole moments. We used 9,10-bis-(2,2-diphenylvinyl)-anthracene single crystals to produce blue and green light from identical single-crystal transistors. We also observed red light, which corresponds to the emission from in-gap states that are caused by impurities. Importantly, each of these different colors corresponds to a distinguishable light polarization, which enables us to tune the emission color by using a light polarizer.  相似文献   
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Ambipolar or bipolar transistors are transistors in which both holes and electrons are mobile inside the conducting channel. This device allows switching among several states: the hole‐dominated on‐state, the off‐state, and the electron‐dominated on‐state. In the past year, it has attracted great interest in exotic semiconductors, such as organic semiconductors, nanostructured materials, and carbon nanotubes. The ability to utilize both holes and electrons inside one device opens new possibilities for the development of more compact complementary metal‐oxide semiconductor (CMOS) circuits, and new kinds of optoelectronic device, namely, ambipolar light‐emitting transistors. This progress report highlights the recent progresses in the field of ambipolar transistors, both from the fundamental physics and application viewpoints. Attention is devoted to the challenges that should be faced for the realization of ambipolar transistors with different material systems, beginning with the understanding of the importance of interface modification, which heavily affects injections and trapping of both holes and electrons. The recent development of advanced gating applications, including ionic liquid gating, that open up more possibility to realize ambipolar transport in materials in which one type of charge carrier is highly dominant is highlighted. Between the possible applications of ambipolar field‐effect transistors, we focus on ambipolar light‐emitting transistors. We put this new device in the framework of its prospective for general lightings, embedded displays, current‐driven laser, as well as for photonics–electronics interconnection.  相似文献   
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