Comparison of 80-keV D+ Ion Implantation with Thermal D2 Doping in Silica by FTIR and ESR Spectroscopy

Behavior of deuterium atoms in fused silica, which were implanted by 80-keV D⁺ (D₂⁺, D₃⁺) ions or doped thermally by D₂ (or D₂O), was studied by infrared Fourier transform spectroscopy (FTIR) and by ESR spectroscopy. When 80-keV deuteron ions are implanted into fused silica, OD bonds are formed. The OD bonds are also formed by thermal doping with D₂ or D₂O. When the deuterated silica is γ-ray irradiated at 77 K, D atoms are formed by rupture of the OD bonds. The efficiency of the OD bond rupture in the deuteron-implanted silica is much less than that in the D₂-doped silica. It is concluded from the results of thermal annealing that the low efficiency of the OD bond rupture in the deuteron-implanted silica is due to the radiation damage accompanying the implantation process. However, the decay rate and detrapping energy of deuterium atoms, once formed in the silica, are similar in both cases.     

色彩人生 源自ENZO

ENZO,就像一颗光芒四射的彩色宝石,镶嵌在6月香港珠宝首饰展览会香港艺粹馆,流光溢彩。     

Identification of Gene encoding a Putative RNA-Helicase,Homologous to SKI2, in Chromosome VII of Saccharomyces cerevisiae

We have determined the nucleotide sequence of a segment of chromosome VII of the yeast Saccharomyces cerevisiae contained in the cosmid clone pEGH101 for a total of 7 kbp. This sequence contains a large open reading frame (ORF) called G9365, coding for a protein of 1967 amino acids that shows a significant homology with the product of the SKI2 gene of S. cerevisiae and contains domains characteristic of RNA-helicases. The ORF is transcribed in vegetative cells but it is not essential for viability as demonstrated by gene disruption. The sequence has been deposited in the GenBank data library under Accession Number U35242. © 1997 John Wiley & Sons, Ltd.