Introduction to the special issue of the 19th International Conference on Runtime Verification

International Journal on Software Tools for Technology Transfer -     

Directed model checking with distance-preserving abstractions

In directed model checking, the traversal of the state space is guided by an estimate of the distance from the current state to the nearest error state. This paper presents a distance-preserving abstraction for concurrent systems that allows one to compute an interesting estimate of the error distance without hitting the state explosion problem. Our experiments show a dramatic reduction both in the number of states explored by the model checker and in the total runtime.     

Verifying Temporal Properties of Reactive Systems: A STeP Tutorial

We review a number of formal verification techniques supported by STeP, the Stanford Temporal Prover, describing how the tool can be used to verify properties of several versions of the Bakery Mutual exclusion algorithm for mutual exclusion. We verify the classic two-process algorithm and simple variants, as well as an atomic parameterized version. The methods used include deductive verification rules, verification diagrams, automatic invariant generation, and finite-state model checking and abstraction.     

Kilopixel X-ray Microcalorimeter Arrays for Astrophysics: Device Performance and Uniformity

We are developing kilopixel arrays of TES microcalorimeters to enable high-resolution x-ray imaging spectrometers for future x-ray observatories and laboratory astrophysics experiments. Our current array design was targeted as a prototype for the X-ray Microcalorimeter Spectrometer proposed for the International X-ray Observatory, which calls for a 40×40-pixel core array of 300?μm devices with 2.5?eV energy resolution (at 6?keV). Here we present device characterization of our 32×32 arrays, including x-ray spectral performance of individual pixels within the array. We present our results in light of the understanding that our Mo/Au TESs act as weak superconducting links, causing the TES critical current (I _c ) and transition shape to oscillate with applied magnetic field (B). We show I _c (B) measurements and discuss the uniformity of these measurements across the array, as well as implications regarding the uniformity of device noise and response. In addition, we are working to reduce pixel-to-pixel electrical and thermal crosstalk; we present recent test results from an array that has microstrip wiring and an angle-evaporated copper backside heatsinking layer, which provides copper coverage on the four sidewalls of the silicon wells beneath each pixel.     

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Implications of Weak Link Effects on Thermal Characteristics of Transition-Edge Sensors

Weak link behavior in transition-edge sensor (TES) microcalorimeters creates the need for a more careful characterization of a device’s thermal characteristics through its transition. This is particularly true for small TESs where a small change in the bias current results in large changes in effective transition temperature. To correctly interpret measurements, especially complex impedance, it is crucial to know the temperature-dependent thermal conductance, G(T), and heat capacity, C(T), at each point through the transition. We present data illustrating these effects and discuss how we overcome the challenges that are present in accurately determining G and T from I–V curves. We also show how these weak link effects vary with TES size. Additionally, we use this improved understanding of G(T) to determine that, for these TES microcalorimeters, Kaptiza boundary resistance dominates the G of devices with absorbers while the electron-phonon coupling also needs to be considered when determining G for devices without absorbers     

Investigations onNb/Al-AlO x -Al/Nb proximity tunneling junctions for X-ray detection

A new Nb/Al-AlO_x-Al/Nb trilayer process using a movable mechanical slit for junction-detector applications is described. Best junctions have a quality factor of 42 mV with a Josephson current density of 1200 A/cm ² at 4.2 K. The temperature dependence of the sub-gap current in the range of 0.45 to 4.2 K has been measured. Deviations from the thermally activated behavior due to imperfections in the tunneling barrier are observed. We compare our simple method with the usual whole wafer processes and we discuss the influence of proximity effects in these junctions in terms of the models proposed by Golubov et al. and by McMillan.