Vapor absorption by LiBr aqueous solution in vertical smooth tubes

Heat and mass transfer in a falling film vertical in-tube absorber was studied experimentally with LiBr aqueous solution. The presented results include the effect of solution flow rate, solution subcooling and cooling water temperature on the absorption in a smooth copper tube 16.05 mm I.D. and 400 mm long. The experimental data in the previous report for a 1200-mm-long tube was also re-examined and compared. It was demonstrated by the observation of the flow in the tube that the break down of the liquid film into rivulets leads to deterioration of heat and mass transfer at lower film Reynolds number or in longer tubes. An attempt to evaluate physically acceptable heat and mass transfer coefficients that are defined with estimated temperature and concentration at the vapor–liquid interface was also presented.     

Pixel-selected ray tracing

An acceleration method based on an idea that T. Whitted (Commun. ACM, vol.23, no.6 pp.343-349, June 1980) presented on ray tracing is discussed. He proposed making antialiased images by hierarchical adaptive oversampling. The present authors use hierarchical adaptive undersampling to reduce the number of pixels whose intensity must be calculated by ray tracing. To implement pixel-selected ray tracing (PSRT), homogeneous regions in images must first be found. Generally, adaptive undersampling can result in some image-quality defects, because small objects and parts of thin or wedge-shaped objects may disappear when they are located between the initially sampled pixels. PSRT has an improved algorithm that uses pixels with the correct object information from among the sampled pixels to find pixels with erroneous color and correct them. Moreover, PRST uses ray-object intersection trees for precise classification of the homogeneity of regions and for fast intensity calculation in homogeneous regions. Experimental results are presented. They show that PSRT is two to nine times faster than standard ray tracing     

Suppression of photo-induced dilation in cyanide treated hydrogenated amorphous silicon films

Effects of cyanide (CN) treatment with hydrogenated amorphous silicon (a-Si:H) films have been investigated. The decrease of ΔV/V was observed in cyanide treated a-Si:H films and the successive thermal annealing at 200°C after CN treatment induced the further reduction of the ΔV/V. XPS spectra show the indirect evidence that the cyanide species is present within 10 nm from the hydrogenated amorphous silicon surface. The results of CN treatment with a-Si:H solar cells are demonstrated.     

Interfacial Reactions between Sapphire and Silver—Copper—Titanium Thin Film Filler Metal

Wetting and brazing studies of sputtering-deposited, submicrometer thin film filler metal in an Ag—Cu—Ti/Al₂O₃ system were performed. The interfacial reaction layer between the filler metal and Al₂O₃ was investigated. It is possible to make a brazing joint even with a reaction layer of less than 100 nm thickness. Different types of interfacial reaction layers were observed when the Ti content in the filler metal was varied. The Cu—Ti—O system compounds were observed in the samples with high wetting capabilities, but not in the sample with low wetting characteristics. It was found that these compounds are substances that promote effective brazing.     

Conductivity of the one-dimensional quantum sine-gordon system (g 2 = 4π) with impurities

We have considered the behavior of the conductivity or the dielectric function of the one-dimensional (1-D) quantum sine-Gordon system (g² = 4) for two models of impurities. We have used a Fermi-Bose relation and a self consistent t-matrix approximation. As for the conductivity at zero temperature, it appears when the concentration of impurities becomes larger than the critical concentration of impurities. It shows the linear increase near the critical concentration. As for the dielectric constant, its behavior is model dependent. We have numerically calculated the frequency dependence of the conductivity at zero temperature. The real part shows the second order increase near the critical frequency. The imaginary part shows the linear decrease from the origin.