Effect of Milling on Slip Casting of Partially Stabilized Zirconia

Specimens of partially stabilized zirconia were slip cast from aqueous suspensions and sintered at 1500°C for 3 h. The relative density of the cast specimens and the firing shrinkage of the sintered specimens depend on the milling time for the suspension. Vickers hardness and K_IC values of 11.46±s0.07 GN/m² and 6.10 ±0.04 MN.m^3/2, respectively, were obtained for all sintered specimens. The dispersion of the suspension is important in increasing the relative density of the cast specimens.     

Flashover voltage characteristics of contaminated station insulators under temporary ac overvoltages in the ac system connected with a frequency converter station

According to the recent analysis results of temporary ac overvoltage in the ac system connected with a frequency converter station, large-magnitude over-voltages were confirmed to occur under some special system conditions. Most of the station insulators currently used cannot withstand such overvoltages according to an evaluation based on the data obtained earlier. The necessity of tests to be done to evaluate such performance more accurately was recognized. Both power frequency and switching impulse overvoltage flashover tests were made on contaminated insulators by the method well simulating the natural wetting condition. Switching impulse flashover voltage with the waveshape having a long wavefront time of 2 ms can be well correlated with the flashover voltage characteristics of temporary ac overvoltage. Higher flashover voltage characteristics were obtained by a clean fog test method compared with those obtained by equivalent fog test method.     

Drain structure optimization for highly reliable deep submicrometern-channel MOSFET

A guideline for n^- fully gate overlapped (FOLD) structure design optimization has been studied. From the viewpoint of reliability, the greatest reduction in substrate current directly leads to the most reliable n^- design for the FOLD structure. The current path modulation phenomenon due to the trapped charge at the n ^- extension region dominates the hot-carrier induced characteristics change for conventional lightly doped drain (LDD) structure with side-wall spacer. This phenomenon is minimized in the FOLD structure due to its higher controllability of the gate electrode than the LDD structure at the n^- extension region. Furthermore, it was also confirmed that the 0.3 μm optimized FOLD structure can achieve high circuit performance at 3.3 V operation, maintaining hot-carrier resistance     

STRUCTURE FORMATION OF COATED FILMS WITH DISPERSED PIGMENTS DURING DRYING

In the drying of coated films with dispersed pigments, such as floppy disks, the structure of the film is formed during the drying process and depends on the drying condition. It is important to understand the structure formation during drying for the design of the dryer and die better quality of the product. We measured die drying characteristics of the film and determined the structure of dried film experimentally. A qualitative model for the structure formation during drying of the coated film is suggested.     

OA&M framework for multiwavelength photonic transport networks

Photonic networks based on wavelength division multiplexing (WDM) and optical path technologies are expected to realize flexible, transparent, and cost-effective transport networks with a large transmission capacity. This paper explores the design framework of photonic transport networks taking into consideration the operation administration and maintenance (OA&M) functions required for the successful introduction of WDM systems based on the optical path concept. From the view point of network maintenance, clear distinction is made between the optical path layer and the optical section layer to facilitate accurate and smooth failure localization. The digital multiplexing span between physical multiplexing interfaces at the end-to-end digital nodes should have the same maintenance span as the corresponding optical path. We argue that cooperative maintenance by OA&M functions at both the digital and optical layers can be a practical way of network supervision. A supervisory (SV) signal transfer method and a configuration that is suitable for the terrestrial trunk network are also indicated. As an example, a practical SV system design methodology and an actual procedure developed for a single channel optical transmission system based on optical in-line amplifiers are introduced. Furthermore, application of the developed SV system and network restoration schemes is discussed for future WDM-based photonic networks. The OA&M aspects introduced will be valuable for creating future photonic network systems     

Development of next generation PWR in Japan

The demand for energy in Japan is expected to increase steadily into the future, and it seems that the importance of nuclear power generation will be heightened more when the situation of our country which is not rich in energy resources is taken into account.

Furthermore, when we consider the present situation that the light water reactors have become common, recent outlook for the supply and demand for uranium resources, trends in the development of the fast breeder reactor technology, etc., the light water reactors are expected to remain dominant in the nuclear power generation of our country until at least the second half of the 21st century.

Based on such a background five PWR utilities in Japan (Hokkaido, Kansai, Shikoku, Kyushu, and the Japan Atomic Power), and Mitsubishi Heavy Industries, Ltd. have jointly started researching the Next Generation PWR which is expected to be the leading nuclear power plant taking place of APWR.     

Carbonization of coals to produce anisotropic cokes. 1. Modifying activities of some additives in the co-carbonization of low-rank coals

Using low-rank coals, the modifying activities of some petroleum, coal tar and aromatic hydrocarbon additives have been examined to find procedures for their utilization in the preparation of blast furnace coke. Petroleum pitch, especially after hydrogenation, exhibited excellent modifying activity even with non-fusible coals. In contrast, the activity of coal tar was very limited with such coals. The napththenic component, revealed by n.m.r. of the additives, appears to be important in the co-carbonization by inducing fusibility and anisotropic development in such coals. Co-carbonization to recover the dehydrogenated additives was attempted. However, there was no development of the anisotropy in the resultant coke by dissolution of the coal particles although the coal particles were firmly fixed in the matrix. Acid-refluxing treatment of non-fusible coals was found to enhance their modification susceptibility, indicating that some of the acid-soluble mineral matter is important in the thermal depolymerization or fusion process of the coal.     

Delayed retardation phenomena of fatigue crack growth in various steels and alloys

The delayed retardation phenomena of fatigue crack growth resulting from a single application of overload were investigated for five steels, two aluminium alloys and a titanium alloy. As long as the small scale yielding condition was satisfied at the overloaded crack tips, the retardation behaviour of these materials was expressed consistently by four parameters; the peak/baseline stress ratio, r, the exponent in the Paris equation, m, the overload-affected zone size, _D, and the crack distance at the minimum rate of crack growth, _B. Then the parameters, _B and _D, characterizing the retardation phenomena for these materials were determined. The retardation of aluminium alloys was stronger than that of the other materials. This is attributed to the lower value of _B/ _D in aluminium alloys than in the other materials. In the case of r=2, the overload-affected zone sizes, _D, were nearly equal to 1.5 ₀ in HT80 steel and aluminium alloys, slightly lower than 1.5 ₀ in SNCM8 steel and much larger than 1.5 ₀ in A553 steel and the titanium alloy, where ₀ is the monotonic plastic zone size calculated according to the Dugdale model. The dependence of retardation on baseline stress intensity, K ₁, appeared somewhat complicated. In the cases of A553 steel and A2017 aluminium alloy the amount of retardation increased with increasing K ₁ value, while in the cases of HT80 steel and Ti-6A1-4V titanium alloy the tendency appeared in the reverse direction. The former behaviour was related to the change in the stress state from plane strain to plane stress at the overloaded crack tips and the latter was related to the threshold of stress intensity.     

New type motor for tough hard disk drive

A new type fluid dynamic bearing spindle motor has been developed for use in a small hard disk drive for mobile applications. Classified as an untied type motor in its basic construction, the new motor is constructed so that it prevents oil leakage and enhances the rigidity of the hard disk drive chassis. The characteristic structural feature of the motor is a hollow rotary spindle through which a stationary shaft is installed. The stationary shaft does not interfere with spindle rotation. Since the stationary shaft is secured between the top cover and base chassis, the motor enhances hard disk drive chassis rigidity, which is an advantage that cannot be achieved by the conventional untied type motor. Although measuring small and thin, the motor has excellent rotational accuracy and shock resistance.     

Superior suppression of gate current leakage in Al<Subscript>2</Subscript>O<Subscript>3</Subscript>/Si<Subscript>3</Subscript>N<Subscript>4</Subscript> bilayer-based AlGaN/GaN insulated gate heterostructure field-effect transistors

AlGaN/GaN-based metal-insulator-semiconductor heterostructure field-effect transistors (MIS-HFETs) with Al₂O₃/Si₃N₄ bilayer as insulator have been investigated in detail, and compared with the conventional HFET and Si₃N₄-based MIS-HFET devices. Al₂O₃/Si₃N₄ bilayer-based MIS-HFETs exhibited much lower gate current leakage than conventional HFET and Si₃N₄-based MIS devices under reverse gate bias, and leakage as low as 1×10⁻¹¹ A/mm at −15 V has been achieved in Al₂O₃/Si₃N₄-based MIS devices. By using ultrathin Al₂O₃/Si₃N₄ bilayer, very high maximum transconductance of more than 180 mS/mm with ultra-low gate leakage has been obtained in the MIS-HFET device with gate length of 1.5 μm, a reduction less than 5% in maximum transconductance compared with the conventional HFET device. This value was much smaller than the more than 30% reduction in the Si₃N₄-based MIS device, due to the employment of ultra-thin bilayer with large dielectric constant and the large conduction band offset between Al₂O₃ and nitrides. This work demonstrates that Al₂O₃/Si₃N₄ bilayer insulator is a superior candidate for nitrides-based MIS-HFET devices.