Theoretical estimation of dielectric loss of oxide glasses using nonequilibrium molecular dynamics simulations

To theoretically explore amorphous materials with a sufficiently low dielectric loss, which are essential for next-generation communication devices, the applicability of a nonequilibrium molecular dynamics simulation employing an external alternating electric field was examined using alkaline silicate glass models. In this method, the dielectric loss is directly evaluated as the phase shift of the dipole moment from the applied electric field. This method enabled us to evaluate the dielectric loss in a wide frequency range from 1 GHz to 10 THz. It was observed that the dielectric loss reaches its maximum at a few THz. The simulation method was found to qualitatively reproduce the effects of alkaline content and alkaline type on the dielectric loss. Furthermore, it reasonably reproduced the effect of mixed alkalines on the dielectric loss, which was observed in our experiments on sodium and/or potassium silicate glasses. Alkaline mixing was thus found to reduce the dielectric loss.     

AFM observation of polyethylene single crystals: selective handedness of screw dislocations in a chair type

The three-dimensional morphology of polyethylene single crystals grown from dilute solution has been examined by atomic force microscopy. Single crystals were deposited on a soft ground of aqueous solution of poly(vinyl alcohol) (PVA) to avoid the collapse of thin lamellar crystals with thickness of 10 nm. The observation of single crystals on dried PVA clarifies the morphology of a chair type crystal as well as well-known hollow pyramidal type. It has been confirmed that the screw dislocations in the chair type follow a selection rule of the handedness in a manner to relieve the distortion in the chair type.     

Iodine-123-BMIPP myocardial washout and cardiac work during exercise in normal and ischemic hearts

Due to the changes in the frequency of penicillin-resistant strains of S. pneumoniae, it is necessary to perform surveillance studies of bacterial resistance. Isolates from the upper respiratory tract of asymptomatic children have been useful. There is no information about the difference between isolates from children with and without upper respiratory tract infection (URTI). The objective of the authors in this paper is to establish the prevalence of carrier-state, serotype and antimicrobial resistance of S. pneumoniae isolates from children with and without acute upper respiratory tract infection (URTI) in a rural area in Mexico. A cross-sectional comparative study was performed in Tlaxcala, Mexico. Children from one month 5 years of age were included. Nasopharyngeal swabs were obtained. Identification was done by international microbiology standards. Serotyping was done by the capsular Quellung test. The susceptibility testing was performed by the agar dilution method. Four-hundred and fifty patients were included. S. pneumoniae was isolated in 134 children (29.7%). Frequency of carriers was greater in patients with URTI (107/323) than without URTI (27/127) (33.1% vs. 21.1% p = 0.012, OR 1.84, IC 95% 1.1-3.08). The six most frequent serotypes were: 6B (16.4%); 19F (11.9%); 19A (6.7%); 14, 23F, and 35 (5.2% each), with no difference among the groups. Only 3% of the strains had high level resistance to penicillin, and 12.6% had intermediate resistance, and for ampicillin 4%, amoxicillin 4%, amoxicillin-clavulanate 4%, ceftriaxone 3%, cefotaxime 1.5%, erythromycin 6%, miocamycin 3%, chloramphenicol 4%, and vancomycin 0%. Trimethoprim-sulfamethoxazole resistance was very high (42%). In conclusion, colonization is higher in children with URTI. Five of the most frequent serotypes identified in this study were the same as those identified in patients with S. pneumoniae invasive diseases in Mexico City. In Tlaxcala, Mexico, beta-lactams could be the drug of choice for the treatment of S. pneumoniae lower respiratory tract infections. It is necessary to perform clinical assays to evaluate the efficacy of trimethoprim-sulfamethoxazole due to the high resistance in vitro.     

Fracture toughness evaluation of adjacent flow weld line in polystyrene by the SENB method

Fracture toughness of adjacent flow weld lines, defined as weld lines that occur when two flow fronts meet and continue to flow together in the same direction (meld line or hot weld line), was evaluated by the single‐edge notched‐bend (SENB) method using three differently‐shaped obstructive pins. Although the fracture toughness varied depending upon the shapes of the pin, the values could be standardized as the distance from the meeting point of the two flow fronts flowing around the pin. The fracture toughness decreased drastically from the meeting point along the weld line and then slightly increased. These characteristic features could be explained by flow‐induced molecular orientation at the weld line interface. The molecules around the meeting point that were initially oriented parallel to the weld line due to fountain flow were able to relax, and then entanglement across the weld line interface developed because the flow stopped in the middle of the filling process, resulting in high fracture toughness. In contrast, the material at the downstream side of the weld line continued flowing during the filling process, being stretched along the flow direction. So, the molecular orientation at this area could not relax. In addition, the V‐notch shape, i.e., the depth and length at the surface of the weld line, which also varied depending on the shape of the obstacles, was considered to be identical when the meeting point was allowed to be a datum point. Thus, the meeting point was found to be a significant factor when the properties of weld lines are investigated. POLYM. ENG. SCI., 45:1059–1066, 2005. © 2005 Society of Plastics Engineers     

Theoretical model for flash generation

Reduction of flash generated in a gas vent is of great concern for manufacturers of electronic parts. The present study proposes a theoretical model for flash generation through consideration of flow characteristics in a gas vent. The model predicts the factors controlling flash, i.e., material parameters such as zero‐shear viscosity, crystallization temperature, thermal conductivity, and heat capacity, and process parameters such as injection and mold wall temperatures, packing pressure, and the clearance of a gas vent. On the other hand, we measure the amount of flash generated in the molding of poly(phenylene sulfide) (PPS) composites containing glass fiber and spherical fillers (CaCO₃ or Al₂O₃). Flash reduces with decreasing size of spherical fillers. These experimental data are successfully interpreted using the flash model. Polym. Eng. Sci., 45:198–206, 2005. © 2005 Society of Plastics Engineers     

A flow simulation for the epoxy casting process using a 3D finite‐element method

A three‐dimensional flow simulation for epoxy casting has been developed. A control‐volume‐based finite‐element method is employed, containing a conservative upwind formulation for the advection terms and equal order interpolations for all variables. This simulation predicts the non‐isothermal and reactive flow behavior under the gravity. The viscosity and reaction‐rate parameters were estimated by using a dynamic rheometer and a differential scanning calorimeter. The predicted flow front advancement and temperature profiles in the calculation domain similar to the mold cavity were in close agreement with the corresponding experimental results. The variation of epoxy surface configuration with flow rate also showed the same tendency between the prediction and the experiment. This simulation seems to be applicable not only to the epoxy casting, but also to other molding processes of various thermoset resins. POLYM. ENG. SCI. 45:364–374, 2005. © 2005 Society of Plastics Engineers.     

Characterization and electrochemical properties of CF4 plasma-treated boron-doped diamond surfaces

The effect of CF₄ plasma etching on diamond surfaces, with respect to treatment time, was investigated using scanning electron microscopy (SEM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and electrochemical measurements. SEM observations and Raman spectra indicated an increase in surface roughening on a scale of 10–20 nm, and an increase in crystal defect density was apparent with treatment time in the range of 10 s to 30 min. In contrast, alteration of the diamond surface terminations from oxygen to fluorine was found to be rather rapid, with saturation of the F/C atomic ratio estimated from XPS analysis after treatment durations of 1 min and more. The redox kinetics of Fe(CN)₆^3−/4− was also found to be significantly modified after 10 s of CF₄ plasma treatment. This behavior shows that C–F terminations predominantly affect the redox kinetics compared to the effect on the surface roughness and crystal defects. The double-layer capacitance (C_dl) of the electrolyte/CF₄ plasma-treated boron-doped diamond interface was found to show a minimum value at 1 min of treatment. These results indicate that a short-duration CF₄ plasma treatment is effective for the fabrication of fluorine-terminated diamond surfaces without undesirable surface damage.     

Wide-span optical frequency comb generator for accurate opticalfrequency difference measurement

An optical frequency comb (OFC) generator was realized for accurate optical frequency difference measurement of 1.5 μm wavelength semiconductor lasers by using a high frequency LiNbO₃ electrooptic phase modulator which was installed in a Fabry-Perot cavity. It was confirmed that the span of the OFC was wider than 4 THz. By using semiconductor lasers whose spectrum linewidths were narrowed to 1 kHz and a sensitive optical balanced-mixer-receiver for measuring beat signal between the sideband of the comb and the laser, we demonstrated a frequency difference measurement up to 0.5 THz with a signal-to-noise ratio higher than 61 dB, and a heterodyne optical phase locking with a heterodyne frequency of 0.5 THz in which the residual phase error variance was less than 0.01 rad². The maximum measurable frequency difference, which was defined as the sideband frequency with the signal-to-noise ratio of 0 dB, was estimated to be 4 THz