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1.

This work aims to produce a high manganese steel with more refined austenite grains and better wear resistance without sacrificing the toughness and tensile properties by Mn alloying and Ti ladle treatment in comparision to ASTM A128 Gr. E1 steel (1.0C-13Mn) that is mostly used in the mining industry. The 1.0C-17Mn-xTi alloys (x=0, 0.05 and 0.1, in wt.%) were prepared. A relationship was established between the microstructures and mechanical properties of the as-cast and solution annealed alloys. Increasing Ti content increases the stable Ti(CN) phase on and beside the grain boundaries and decreases up to 37% the austenite grain size of the as-cast alloy with 0.10wt.% Ti. Correspondingly, after solution annealed, optimized titanium content (0.05wt.%) results in significant improvements in wear resistance, hardness, elongation, yield and tensile strengths by 44%, 31%, 30%, 8% and 12%, respectively, except 9% decrease in impact toughness compared to ASTM A 128 Gr. E1 steel without modification. These results show that 1.0C-17Mn-0.05Ti alloy can be used for parts exposed to high load wear and applied in conditions where relatively high tensile properties with sufficent ductility is needed.

  相似文献   
2.
Epoxidized vegetable oils are desirable chemicals due to their eco‐friendly characteristics and their being a major source of many green products. Ring opening is one of the ways to convert these epoxidized oils to some new intermediates. The use of mono‐functional amines, alcohols, acid anhydrides and thioethers for epoxy ring opening has been reported in the literature. In this study, thioglycolic acid (TGA) bearing thiol and carboxylic acid as two different functional groups and methyl ester of thioglycolic acid (TGAME) were used. Currently, there is no reported literature describing epoxy ring opening using chemicals bearing two different functional groups simultaneously. In this way, two new polyols were synthesized, one with TGA (polyol 1) and one with TGAME (polyol 2). FTIR and 1H‐ and 13C‐NMR spectroscopy confirmed that the ring was opened by the carboxylic acid group of TGA, and the thiol group was not involved in the ring opening whereas the ring was opened by the thiol group in the case of TGAME.  相似文献   
3.
We have tried to determine the effects of 60Co gamma irradiation on properties of Au/SnO2/n-Si (MOS) structures such as dielectric constant (ε′), dielectric loss (ε″), tangent loss (tan δ) and ac conductivity (σac). Three samples were fabricated with different deposition time. The samples were irradiated using a 60Co γ-ray source irradiation with the total dose range of 0–500 kGy at room temperature. Capacitance and conductance (CGV) measurements were performed at a frequency of 500 kHz in the dark and at room temperature before and after irradiation. The experimental data were analyzed using complex permittivity and electric modulus. The values of ε′, ε″, tan δ and σac showed a strong dependence on the applied voltage and irradiation dose. The dielectric properties of MOS structures have been found to be strongly influenced by the presence of dominant radiation-induced defects. Experimental results show that the interfacial polarization contributes to the improvement of dielectric properties of Au/SnO2/n-Si (MOS) Schottky diodes.  相似文献   
4.
The paper describes a simplified technique, based upon an extension of the upper bound shakedown theorem, for the evaluation of ratchet boundaries for a plate subject to a through-thickness temperature transient and in-plane loading. The study of a range of cases indicates that transient effects can have a significant effect upon the deformation properties and that strain growth can occur for zero applied loads at quite moderate levels of thermal loading. As a result the identification of transient thermal stresses as F stresses in ASME design codes does not seem acceptable.  相似文献   
5.
The purpose was to estimate the radiation dose to the thyroid from total cranial irradiation with parallel opposed lateral fields of 1.25 MeV gamma rays of (60)Co, to represent the current treatment modality, and with 6 MV photon beams derived from a linear accelerator. The mean thyroid doses were measured using thermoluminescence dosemeters in the Rando phantom with two cranial irradiation set-ups: (1) the lateral beams were angled by rotating the collimator to avoid irradiation of the lens and healthy tissues and (2) the lateral beams were not angled, and shielding blocks were used to protect the lens and healthy tissues. For a cranial dose of 18 Gy, thyroid doses for child patients for (60)Co with the open and blocked fields were 0.27 and 0.32 Gy, respectively. With 6 MV, the thyroid dose was less than the doses for (60)Co open and blocked cranial fields by 17 and 10%, respectively. Unblocked cranial fields and a high-energy photon beam should be preferred for cranial irradiation of children.  相似文献   
6.
We consider quasi-cyclic codes over the ring $\mathbb{F }_2+u\mathbb{F }_2+v\mathbb{F }_2+uv\mathbb{F }_2$ , a finite non-chain ring that has been recently studied in coding theory. The Gray images of these codes are shown to be binary quasi-cyclic codes. Using this method we have obtained seventeen new binary quasi-cyclic codes that are new additions to the database of binary quasi-cyclic codes. Moreover, we also obtain a number of binary quasi-cyclic codes with the same parameters as best known binary linear codes that otherwise have more complicated constructions.  相似文献   
7.
The bioactive compounds of 16 tomato cultivars, grown in the same field for 2 years (2003 and 2004) were investigated. Lycopene (5.7–26.3 mg kg?1) was the predominant carotenoid, while β-carotene (2.1–11.2 mg kg?1) and a small amount of lutein (0.02–0.49 mg kg?1) were found in all tomato cultivars. Kagome 77, the richest source of total carotenoids and L-ascorbic acid, also showed the highest antioxidant activity. β-Carotene and lutein contents of tomatoes differed between 2 years statistically. Antioxidant activities of tomatoes were found between 48 and 118 μmol TEAC 100 g?1. A significant correlation was only observed between L-ascorbic acid (2.2–13.8 mg 100 g?1) and antioxidant activity using TEAC assay.  相似文献   
8.
New phase diagram data and a thermodynamic assessment of the CeO‐Gd2O3‐CoO system using the CALPHAD approach are presented. This information is needed to understand the surprisingly low sintering temperature (950°C–1050°C) of CeO2‐based materials doped with small amounts of transition metal oxide (e.g., CoO). Experimental phase equilibria between 1100°C and 1300°C are reported based on the analysis of annealed and molten samples. No isolated compound exists in the ternary. At 1300°C the Co solubility in the ternary compounds Ce1?x?yGdxCoyO2?x/2?y (fluorite) is 2.7 mol% and is less than 1 mol% in the Gd2?xCexO3+x/2 (bixbyite). The Ce solubility in the perovskite GdCoO3?δ was found to be 1 mol%. The lowest temperature eutectic melt in the ternary has a composition of 57.2 mol% Co and 41.1 mol% Gd melting at an onset temperature of 1303 ± 5°C, which is close to the binary eutectic in the Gd2O3‐CoO system at 60 ± 2 mol% Co and 1348 ± 1°C.  相似文献   
9.
The metal-oxide-semiconductor (MOS) structures with insulator layer thickness range of 55-430 Å were stressed with a bias of 0 V during 60Co-γ ray source irradiation with the dose rate of 2.12 kGy/h and the total dose range was 0-5×105 Gy. The real part of dielectric constant ε′, dielectric loss ε″, dielectric loss tangent tanδ and the dc conductivity σdc were determined from against frequency, applied voltage, dose rate and thickness of insulator layer at room temperature for Au/SnO2/n-Si (MOS) structures from C-V capacitance and G-V conductance measurements in depletion and weak inversion before and after irradiation. The dielectric properties of MOS structures have been found to be strongly influenced by the presence of dominant radiation-induced defects. The frequency, applied voltage, dose rate and thickness dependence of ε′, ε″, tanδ and σdc are studied in the frequency (500 Hz-10 MHz), applied voltage (−10 to 10 V), dose rate (0-500 kGy) and thickness of insulator layer (55-430 Å) range, respectively. In general, dielectric constant ε′, dielectric loss ε″ and dielectric loss tangent are found to decrease with increasing the frequency while σdc is increased. Experimental results shows that the interfacial polarization can be more easily occurred at the lower frequency and/or with the number of density of interface states between Si/SnO2 interfaces, consequently, contribute to the improvement of dielectric properties of Au/SnO2/n-Si (MOS) structures.  相似文献   
10.
Journal of Materials Science: Materials in Electronics - In this work, a metal–semiconductor diode in the form of Au/4H-SiC is fabricated, and the electrical properties of this device are...  相似文献   
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