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1.
To theoretically explore amorphous materials with a sufficiently low dielectric loss, which are essential for next-generation communication devices, the applicability of a nonequilibrium molecular dynamics simulation employing an external alternating electric field was examined using alkaline silicate glass models. In this method, the dielectric loss is directly evaluated as the phase shift of the dipole moment from the applied electric field. This method enabled us to evaluate the dielectric loss in a wide frequency range from 1 GHz to 10 THz. It was observed that the dielectric loss reaches its maximum at a few THz. The simulation method was found to qualitatively reproduce the effects of alkaline content and alkaline type on the dielectric loss. Furthermore, it reasonably reproduced the effect of mixed alkalines on the dielectric loss, which was observed in our experiments on sodium and/or potassium silicate glasses. Alkaline mixing was thus found to reduce the dielectric loss.  相似文献   
2.
3.
Using an electromagnetic levitation facility with a laser heating unit, silicon droplets were highly undercooled in the containerless state. The crystal morphologies on the surface of the undercooled droplets during the solidification process and after solidification were recorded live by using a high-speed camera and were observed by scanning electron microscopy. The growth behavior of silicon was found to vary not only with the nucleation undercooling, but also with the time after nucleation. In the earlier stage of solidification, the silicon grew in lateral, intermediary, and continuous modes at low, medium, and high undercoolings, respectively. In the later stage of solidification, the growth of highly undercooled silicon can transform to the lateral mode from the nonlateral one. The transition time of the sample with 320 K of undercooling was about 535 ms after recalescence, which was much later than the time where recalescence was completed.  相似文献   
4.
A mullite (3Al2O3·2SiO2) sample has been levitated and undercooled in an aero-acoustic levitator, so as to investigate the solidification behavior in a containerless condition. Crystal-growth velocities are measured as a function of melt undercoolings, which increase slowly with melt undercoolings up to 380 K and then increase quickly when undercoolings exceed 400 K. In order to elucidate the crystal growth and solidification behavior, the relationship of melt viscosities as a function of melt undercoolings is established on the basis of the fact that molten mullite melts are fragile, from which the atomic diffusivity is calculated via the Einstein-Stokes equation. The interface kinetics is analyzed when considering atomic diffusivities. The crystal-growth velocity vs melt undercooling is calculated based on the classical rate theory. Interestingly, two different microstructures are observed; one exhibits a straight, faceted rod without any branching with melt undercoolings up to 400 K, and the other is a feathery faceted dendrite when undercoolings exceed 400 K. The formation of these morphologies is discussed, taking into account the contributions of constitutional and kinetic undercoolings at different bulk undercoolings.  相似文献   
5.
Reduction of flash generated in a gas vent is of great concern for manufacturers of electronic parts. The present study proposes a theoretical model for flash generation through consideration of flow characteristics in a gas vent. The model predicts the factors controlling flash, i.e., material parameters such as zero‐shear viscosity, crystallization temperature, thermal conductivity, and heat capacity, and process parameters such as injection and mold wall temperatures, packing pressure, and the clearance of a gas vent. On the other hand, we measure the amount of flash generated in the molding of poly(phenylene sulfide) (PPS) composites containing glass fiber and spherical fillers (CaCO3 or Al2O3). Flash reduces with decreasing size of spherical fillers. These experimental data are successfully interpreted using the flash model. Polym. Eng. Sci., 45:198–206, 2005. © 2005 Society of Plastics Engineers  相似文献   
6.
The Earth Simulator (ES), developed under the Japanese government’s initiative “Earth Simulator project”, is a highly parallel vector supercomputer system. In this paper, an overview of ES, its architectural features, hardware technology and the result of performance evaluation are described.

In May 2002, the ES was acknowledged to be the most powerful computer in the world: 35.86 teraflop/s for the LINPACK HPC benchmark and 26.58 teraflop/s for an atmospheric general circulation code (AFES). Such a remarkable performance may be attributed to the following three architectural features; vector processor, shared-memory and high-bandwidth non-blocking interconnection crossbar network.

The ES consists of 640 processor nodes (PN) and an interconnection network (IN), which are housed in 320 PN cabinets and 65 IN cabinets. The ES is installed in a specially designed building, 65 m long, 50 m wide and 17 m high. In order to accomplish this advanced system, many kinds of hardware technologies have been developed, such as a high-density and high-frequency LSI, a high-frequency signal transmission, a high-density packaging, and a high-efficiency cooling and power supply system with low noise so as to reduce whole volume of the ES and total power consumption.

For highly parallel processing, a special synchronization means connecting all nodes, Global Barrier Counter (GBC), has been introduced.  相似文献   

7.
A new token-passing mechanism, priority token passing, which features real-time access and fast detection and recovery of transmission errors, is discussed in detail in comparison with standard token-passing protocols, and its large-scale integration (LSI)-oriented design concept is described. Priority token passing includes only a small performance overhead, due to its switching functions, which can change network topology from ring to broadcast medium. A token-holding node passes the token to another node after determining the successor through priority comparison. Errors occurring during token passing can, thus, be detected and corrected simply and promptly. Priority token passing has a simple hardware implementation, requiring only small additions to the frame control circuitry, and has a small implementation overhead. The priority token-passing protocol and two other important network communication functions, dual ring network reconfiguration and high-level data link control (HDLC) normal response mode-based message transmission, are designed as a single finite-state machine, and implemented into a compact LSI chip. This integrated instrument network (IINET) chip provides complete network communication services and requires only three additional external electronic components for operation  相似文献   
8.
We succeeded in observing the continuously tunable, pulsed InSb SFR (Spin-Flip Raman) laser emission in the infrared region of 11~16µm (11.4~16.3µm) from only one InSb device, merely by adjusting the pumping wavelength (11 lines from the infrared NH3 laser) and the applied magnetic field (0~80 kGauss).  相似文献   
9.
Experimental study was made to confirm the validity of new designs of the auxiliary cooling system for the high temperature engineering test reactor (HTTR). First, it is necessary to vent residence air in outlet side of water chamber of the auxiliary heat exchanger for the HTTR. Accordingly, we have proposed to mount a proper bend duct in the outlet side of the water chamber. Air vent is done by difference between pressures at both ends of the bend duct caused by the forced water circulation using the water pumps. From flow tests, it was confirmed that it is capable of venting the air through the bend duct by circulating the water in maximum capacity of the water pumps. Second, it is essential to prevent seizure and excessive wear of the liner slides of the auxiliary concentric hot gas duct for the HTTR at a service temperature of 950°C. Therefore, we have put forward to coat titanium nitride (TiN) on the surface of the liner slides made of nickel-based superalloy Hastelloy XR using the thermochemical vapor deposition method. As a result of seizure and wear tests, it was confirmed that the TiN coating film of 3 μm on the surface of Hastelloy XR is sufficient.  相似文献   
10.
The causes of lightning outage are subdivided into direct lightning strokes and induced lightning strokes, which are identified by the characteristics of the lightning overvoltage. In the past, lightning protection devices were directed mainly toward the latter, and attention has been focused on the installation of lightning protection devices, ground wires, and reinforcement of insulators. However, lightning outages continue to occur. Thus it is extremely important to clarify the fault characteristics of lightning surges and to study the effectiveness of various lightning protection devices by considering both direct lightning stroke and induced lightning stroke in order to prevent lightning outage in the future. In this research, the electromagnetic transients program (EMTP) has been applied to the direct lightning stroke, and the induced lightning outage analysis program for multiple conductor systems has been applied to the induced lightning stroke to study the effectiveness of lightning protection devices provided by combination of various lightning protection devices. The most effective lightning protection schemes are analyzed and evaluated based on verification tests on the full scale models as well as economic considerations.  相似文献   
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