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The photoelectrochemical behaviors of RuL2(NCS)2 dye-sensitized SnO2/TiO2 coupled solar cell was studied and compared with TiO2 single system. The coupled system shows higher incident photon-to-current conversion efficiency (IPCE) value than the single system. A maximum IPCE value in the coupled system with 3.5 μm-thick SnO2 and 7 μm-thick TiO2 attained 82.4% at 530 nm wavelength. The higher IPCE value in the coupled system is attributed to the charge separation by fast electron transfer process from the excited RuL2(NCS)2 dye to TiO2 to SnO2 in the system with different energy level.  相似文献   
3.
The medical field is one in which the need for customization can be clear cut, as providing tailored devices and implants for unique physiologies can provide for a better overall treatment than the use of 'off the shelf' devices and implants. Customization in the production of medical products can be roughly divided into consideration of medical devices, and of implantable parts or systems. The present paper outlines the current state of the art in both of these areas, presents details of projects that are ongoing at the University of Leeds and outlines future research directions.  相似文献   
4.
This paper presents a partial scan algorithm, calledPARES (PartialscanAlgorithm based onREduced Scan shift), for designing partial scan circuits. PARES is based on the reduced scan shift that has been previously proposed for generating short test sequences for full scan circuits. In the reduced scan shift method, one determines proch FFs must be controlled and observed for each test vector. According to the results of similar analysis, PARES selects these FFs that must be controlled or observed for a large number of test vectors, as scanned FFs. Short test sequences are generated by reducing scan shift operations using a static test compaction method. To minimize the loss of fault coverage, the order of test vectors is so determined that the unscanned FFs are in the state required by the next test vector. If there are any faults undetected yet by a test sequence derived from the test vectors, then PARES uses a sequential circuit test generator to detect the faults. Experimental results for ISCAS'89 benchmark circuits are given to demonstrate the effectiveness of PARES.  相似文献   
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Epithelioid hemangioendothelioma is a relatively rare lesion. Although its histogenesis has been well described, its immunohistochemical characteristics remain controversial. A case of epithelioid hemangioendothelioma of the soft tissue of the right leg in a 67-year-old Chinese woman is reported. Histologic findings of intracytoplasmic lumina in the tumor cells and positive immunostaining for vimentin, factor VIII-related antigen. CD34 and Ulex europaeus agglutinin 1 (UEA-1) were obtained, demonstrating differentiation of the tumor cells to endothelial cells, although staining for antibodies to cytokeratins AE1/AE3 and CAM5.2 was weak. CD34 as well as Factor VIII-related antigen is a useful marker of endothelial differentiation in this tumor. A review of the literature is also presented.  相似文献   
7.
Some abnormal fatigue life shortenings dependent upon load frequency for several steels are discussed. A possible relation between anelasticity caused by interstitial atoms and the abnormal fatigue life drop is presented. Normally, interstitial atoms are in a position which minimizes the energy around a dislocation, the Snoek ordering sites. We consider the Snoek effect as a typical example of anelasticity, and the possibility on atoms moving from attractive sites to repulsive ones when repeated stresses are applied and discuss a theory to explain the reduction of the fatigue life using Snoek ordered atoms moving out by fatigue stress at the frequency of Snoek effect. Bending fatigue tests were conducted to obtain the relationship between fatigue life and load frequency at two different temperatures (298 K and 333 K) for an iron nitrided steel. A sharp fatigue life drop was observed at a load frequency corresponding to the resonant frequency of the Snoek effect for nitrogen atoms. The frequency was about 3 Hz and 298 K and shifted to a higher frequency — about 6 Hz — at 333 K. Results reveal that the possible explanation to those abnormal phenomena may be anelasticity.Work partially conducted at Laboratorio E and Departamento de Ciencias de Materiales, Universidad Simón Bolívar, Venezuela.  相似文献   
8.
The thermal conductivity of a SiC ceramic was measured as 270 W·m−1·K−1 at room temperature. At low temperatures ( T < 25 K), the decrease in the conductivity was proportional to T 3 on a logarithmic scale, which indicated that the conductivity was controlled by boundaries. The calculated phonon mean free path in the ceramic increased with decreased temperature, but was limited to ∼4 μm, a length almost equal to the grain size, at temperatures below 30 K. We concluded that the thermal conductivity of the ceramic below 30 K was influenced significantly by grain boundaries and grain junctions.  相似文献   
9.
The positive temperature coefficient of resistivity (PTCR) behavior of semiconductive BaTiO3 is well explained by the Heywang model, which predicts the resistivity behavior above the Curie point based on the acceptor state density at the grain boundaries, the charge carrier density, and the energy gap, E s, between the conduction band and the acceptor levels. However, the relationship between these parameters and the production parameters (sintering time, composition, and cooling rate) is not well understood. Recently, the present authors have found that E s can be increased by thorough oxidation. This increase is attributed to a change in the oxidation state of the acceptor. Based on this finding and results from the literature, a phenomenological PTCR model and an accompanying PTCR chart for acceptor–donor-codoped BaTiO3 are proposed to clarify this relationship. The PTCR chart clarifies that acceptor dopant concentrations, oxidation time, and oxygen partial pressure during oxidation or cooling can be optimized simultaneously to obtain optical PTCR properties.  相似文献   
10.
Experimental evidence shows that the acceptor-state levels in Sb-doped positive-temperature-coefficient-type BaTiO3 are compensated up to a critical acceptor-state density. Using the slope of the natural logarithm of the resistivity with respect to 1/ T , instead of maximum resistivity as a measure for the acceptor-state density, it is possible to estimate this critical value. The value obtained (4.2 × 1017 m−2) is believed to be the first reported estimate based on experimental data. It is in good agreement with the estimate of 6 × 1017 m−2 (first reported by Jonker) obtained from the spontaneous polarization of BaTiO3. This shows that the ferroelectric behavior of BaTiO3 is indeed a feasible explanation for the low resistivity below the Curie point, as proposed by Jonker.  相似文献   
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