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1.
The authors report two cases of multicentric osteolytic lesions in the occipital bone without any history of head trauma. The excisional biopsy of the first case revealed that the lesion was multicentric but a continuous cavity with the subarachnoid space through various sizes of dural defect, and the cavities were covered by arachnoid lining. Together with the previously reported similar 5 cases, the characteristic common feature is multicentric osteolytic lesions in the occipital bone at advanced age without marginal sclerosis. "The cluster of arachnoid diverticula in the occipital bone (CADOB)" is probably the most appropriate term for these non-traumatic lesions with the following characteristics: elderly patients, occipital bone, midline, multiple, intact outer table, nonsclerotic margin and without history of trauma. Operation may not be indicated because of its non-progressive and benign nature.  相似文献   
2.
Annealing conditions of CdTe layers grown on Si substrates by metalorganic vapor-phase epitaxy were studied. Typically, 3-μm-thick n-type (211) CdTe layers were annealed for 60 s in flowing hydrogen at atmospheric pressure by covering their surfaces with bulk CdTe wafers. At annealing temperatures above 700°C, improvement of crystal quality was confirmed from full-width at half-maximum values of double-crystal rocking-curve measurements and x-ray diffraction measurements. Photoluminescence measurements revealed no deterioration of electrical properties in the annealed n-CdTe layers. Furthermore, annealing at 900°C improved the performance of radiation detectors with structure of p-like CdTe/n-CdTe/n +-Si substrate.  相似文献   
3.
We present reverse bias current (dark current) characteristics of a two-dimensional monolithic pixel-type nuclear radiation detector array fabricated using metalorganic vapor-phase epitaxy (MOVPE)-grown thick CdTe epitaxial layers on Si substrate. The (14?×?8) pixel array was formed by cutting deep vertical trenches using a dicing saw, where each pixel possesses a p-CdTe/ n-CdTe/n +-Si heterojunction diode structure. The dark currents showed pixel-to-pixel variations when measured at higher applied biases exceeding 100?V. The dark current had a dependence on the pixel thickness, where pixels with lower CdTe thickness exhibited higher currents. Moreover, the temperature dependence of the dark current revealed that a deep level with activation energy of around 0.6?eV is responsible for the observed dark currents and their pixel-to-pixel variation. We discuss that the effective ratio of Te to Cd at the growth surface is a major factor that controls the thickness variation, and is also responsible for the formation of 0.6?eV deep levels.  相似文献   
4.
A back surface illuminated 130/spl times/130 pixel PtSi Schottky-barrier (SB) IR-CCD image sensor has been developed by using new wiring technology, referred to as CLOSE Wiring, CLOSE Wiring, designed to effectively utilize the space over the SB photodiodes, brings about flexibility in clock line designing, high fill factor, and large charge handling capability in a vertical CCD (VCCD). This image sensor uses a progressive scanned interline-scheme, and has a 64.4% fill factor in a 30 /spl mu/m/spl times/30 /spl mu/m pixel, a 3.9 mm/spl times/3.9 mm image area, and a 5.5 mm/spl times/5.5 mm chip size. The charge handling capability for the 3.3 /spl mu/m wide VCCD achieves 9.8/spl times/10/sup 5/ electrons, The noise equivalent temperature difference obtained was 0.099 K for operation at 120 frames/sec with a 50 mm f/1.3 lens.<>  相似文献   
5.
InAs/AlGaAsSb deep quantum well was successfully formed on GaAs substrate and examined for two electron devices, Hall elements (HEs), and field-effect transistors (FETs). With a thin buffer layer of 600 nm AIGaAsSb on GaAs substrate, we observed high electron mobility more than 23000 cm2/Vs and extrinsic effective electron velocity of 2.2 x 107 cm/s for a 15 nm thick InAs channel at room temperature. AIGaAsSb lattice matched to InAs was discussed from the view points of insulating property, carrier confinement, and oxidization rate. Reliability data good enough for practical use were also obtained for HEs. We demonstrated AIGaAsSb as a promising buffer/barrier layers for InAs channel devices on GaAs substrate, and we discussed the possible advantages of AIGaAsSb also for InGaAs FETs.  相似文献   
6.
The beam transport of N(+) ion and C(60)(+) ion in the Bio-Nano ECRIS with min-B configuration was investigated based on the ion beam profiles. The N(+) beam could be focused under the low-beam current conditions. Also the C(60)(+) beam could be focused in spite of the large space-charge effect which will lead the divergence of the beam. We confirmed that our beam transport system works well even for the C(60)(+) ion beam. We estimated the highest C(60)(+) beam current with the focused beam profile by comparing the N(+) ion beam.  相似文献   
7.
It is important to match the feeding ratio of comonomers to the composition ratio in the resulting copolymers as closely as possible in industrial production, where the goal is often to produce more a homogeneous composition in copolymers. In this study, a flow copolymerization system with a conventionally initiated free radical method, together with randomly selected polymerization conditions is investigated. It is succeeded in achieving a closer match between the composition ratio and feeding ratio than previously reported in the copolymerization of styrene with methyl methacrylate and of glycidyl methacrylate with methyl methacrylate, which will widen the range of applications, by precisely controlling the mixing and heating in a flow polymerization apparatus. This is confirmed by the fact that the estimated values of reactivity ratios, r1 and r2, which are used in the reaction kinetics of copolymerization, are close to 1.  相似文献   
8.
Extraction of Rh(III) from a HCl solution with N,N-disubstituted amide–containing tertiary amine (ACTA) compounds (N,N-di-n-hexyl(N-methyl-N-n-octyl-ethylamide)amine (MonoAA), N-n-hexyl-bis(N-methyl-N-n-octyl-ethylamide)amine (BisAA), and tris(N-methyl-N-n-octyl-ethylamide)amine (TrisAA)) was investigated. The ACTAs extract Rh(III) more efficiently than tri-n-octylamine (TOA), and the extraction efficiency increases with increasing number of amide groups: TrisAA > BisAA > MonoAA ? TOA. For all ACTAs, the predominant Rh(III) complex extracted from 2 M HCl is probably {[RhCl5(H2O)]·(ACTA·H)2}. The apparent basicity of the ACTAs and TOA varies in the opposite order from that observed for the Rh(III) extraction efficiency. Rh(III) can be readily back-extracted using 10 M HCl solution possessing a high selectivity over similarly loaded Pd(II) and Pt(IV).  相似文献   
9.
The catalytic regio‐ and stereoselective monoglycosylation of carbohydrates using organotin catalysts is demonstrated. The one‐step reaction affords various oligosaccharides linked at the secondary hydroxy group in high chemical yield and good regio‐ and stereoselectivities. The regioselectivity of the glycosylation is shown to depend on the spatial arrangement of the hydroxy groups in the carbohydrates.

  相似文献   

10.
A versatile solid‐phase approach based on peptide chemistry was used to construct four classes of structurally diverse polyamines with modified backbones: linear, partially constrained, branched, and cyclic. Their effects on DNA duplex stability and structure were examined. The polyamines showed distinct activities, thus highlighting the importance of polyamine backbone structure. Interestingly, the rank order of polyamine ability for DNA compaction was different to that for their effects on circular dichroism and melting temperature, thus indicating that these polyamines have distinct effects on secondary and higher‐order structures of DNA.  相似文献   
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