EC Analysis of Multi-Antenna System over 5G and Beyond Networks and its Application to IRS-Assisted Wireless Systems

Wireless Personal Communications - Recently, the theory of effective rate has attracted much attention, since it can take the delay aspect into account when performing channel capacity analysis. In...     

Sensitivity Analysis of Calibration Methods and Factors Effecting the Statistical Nature of Radiation Measurement

The scintillator detectors are recalibrated against the datasheet given by the manufacturer. Optimal and mutual dependent values of (a) high voltage at PMT (Photomultiplier Tube), (b) amplifier gain, (c) average time to count the radiation particles (set by operator), and (d) number of instances/sample number are estimated. Total 5: two versions of Central Limit Theorem (CLT), (3) industry preferred Pulse Width Saturation, (4) calibration based on MPPC coupled Gamma-ray detector, and (5) gross method are used. It is shown that the CLT method is the most optimal method to calibrate the detector and its respective electronics couple. An inverse modeling-based Computerized Tomography method is used for verification. It is shown that statistically averaging results are more accurate and precise data than mode and median if the data is not skewed and a random number of samples are used during the calibration process. It is also shown that the average time to count the radiation particle is the most important parameter affecting the optimal calibration setting for precision and accurate measurements of gamma radiation.

     

Domain Adaptation for POS Tagging with Contrastive Monotonic Chunk-wise Attention

Neural Processing Letters - Part of Speech (POS) tagging is a sequential labelling task and one of the core applications of Natural Language Processing. It has been a challenging problem for the...     

Effect of 100 KeV Ar+ ion beam irradiation on ZnO thin films – Influence of morphology vis-a-vis electrode/electrolyte interface and its impact on photoelectrochemical water splitting

The present study attempts quantitative determination of changes in the morphological surface features viz. fractal dimension, lower and upper cut off length scale through Power Spectral Density analysis prior to and after irradiation of 100 KeV Ar⁺ ion beam at incidence angles of 0°, 40° and 60° on ZnO thin films. All the unirradiated and irradiated samples are subjected to photoelectrochemical characterization and a correlation between photoelectrochemical performance and morphological parameters is established. Sample irradiated at 40° angle at the fluence of 5 × 10¹⁶ ions/cm² is found to possess maximum fractal dimension of 2.72, lower and upper cut off length scale of 3.16 nm and 63.00 nm respectively. This sample exhibits maximum photocurrent density of 3.19 mA/cm² and applied bias photon-to-current efficiency of 1.12% at 1.23 V/RHE. Hydrogen gas collected for duration of 1 h for the same sample was ~4.83 mLcm^?2.     

Impact of Mole Fractions due to Work Function Variability (WFV) of Metal Gate on Electrical Parameters in Strained SOI-FinFET

In the recent sub-20 nm technology node, the process variability issues have become a major problem for scaling of MOS devices. We present a design for a strained Si/SiGe FinFET on an insulator using a 3D TCAD simulator. The impact of metal gate work function variability (WFV) on electrical parameters is studied. Such impact of WFV for different mole fractions (x) of the SiGe layer in a strained SOI-FinFET with varying grain size is presented. The results show that as the mole fraction is increased, the variability in threshold voltage (σVT) and off current (σIoff) is decreased; while, the variability of on-current (σIon) is increased. A notable observation is the distribution of electrical parameters approaches a normal distribution for smaller grain sizes.     

Cut off frequency and transit time analysis of lightly doped drain (LDD) MOSFETs

Analytical model for the transconductance, cut off frequency, transit time and fringing capacitance of LDD MOSFETs is presented with a simple approach. The analysis is carried out considering the LDD device as a conventional MOSFET with a series resistance [Z.-H. Liu et al., Threshold voltage model for submicrometer MOSFETs. IEEE Trans Electron Devices 1993; ED-40: 86–94] and a simple closed form expressions for cut off frequency and transit time is obtained. The total gate capacitance, i.e. the geometric and fringing capacitance, is calculated for both LDD and non-LDD devices and lower fringing capacitance is reported in LDD devices. Lower cut-off frequencies and higher transit time are reported in LDD devices for the same channel length.