Validity of the Parabolic Effective Mass Approximation in Silicon and Germanium n-MOSFETs With Different Crystal Orientations

This paper investigates the validity of the parabolic effective mass approximation (EMA), which is almost universally used to describe the size and bias-induced quantization in n-MOSFETs. In particular, we compare the EMA results with a full-band quantization approach based on the linear combination of bulk bands (LCBB) and study the most relevant quantities for the modeling of the mobility and of the on-current of the devices, namely, the minima of the 2-D subbands, the transport masses, and the electron density of states. Our study deals with both silicon and germanium n-MOSFETs with different crystal orientations and shows that, in most cases, the validity of the EMA is quite satisfactory. The LCBB approach is then used to calculate the values of the effective masses that help improve the EMA accuracy. There are crystal orientations, however, where the 2-D energy dispersion obtained by the LCBB method exhibits features that are difficult to reproduce with the EMA model.     

Bias and temperature dependence of homogeneous hot-electroninjection from silicon into silicon dioxide at low voltages

In this paper, new homogeneous hot-electron injection data at 300 K and 77 K is provided covering applied voltages from well below to well above the Si-SiO₂ barrier height, and a wide range of oxide fields. We found that, in contrast to the MOSFET case, homogeneous injection shows two different regimes for accelerating voltages below and above the barrier height. A simple interpretation of the data is proposed, and supported by Monte Carlo (MC) simulations of the injection experiment. Essentially, the two regimes are the signature of a marked transition between an electron population mostly heated by the electric field, and a tail population created by additional but less efficient energy gain mechanisms, leading to a sharp transition in the carrier distribution function. The details of the bias and temperature dependence of injection are then interpreted as the combined effect of tunneling and carrier distribution. Furthermore, possible implications on MOSFET gate currents are briefly discussed     

Ambulatory subcutaneous internal sphincterectomy]

The internal anal sphincterotomy operation represents the best therapy for the treatment of those anal lesions, above all anal fissures, which cause hypertrophy and spasms of the internal anal sphincter. The Authors report their experience of 253 operations of internal subcutaneous sphincterotomy carried out between 1989 and 1995 under local anaesthesia in the outpatient clinic. The excellent results achieved prove that the procedure can easily be carried out under local anaesthesia in an outpatient clinic and, therefore, it is preferable to the surgical technique of isolation of the internal sphincter, not only for its practicality but also for the improved results.     

Design of an X-band transformer-coupled amplifier withimproved stability and layout

The authors present a push-pull transformer-coupled amplifier for monolithic microwave applications, and discuss how its stability and layout have been improved with respect to conventional approaches by means of opposite-phase feedback and fully symmetrical layout. The circuit provides state-of-the-art performance (10-dB gain and 18-dBm saturated power in the 4-8-GHz band) with only 165-mW DC power consumption     

Competitive inhibition of choline phosphotransferase by geranylgeraniol and farnesol inhibits phosphatidylcholine synthesis and induces apoptosis in human lung adenocarcinoma A549 cells

We have previously shown that, among various isoprenoids, farnesol and geranylgeraniol specifically induced actin fiber disorganization, growth inhibition, and apoptosis in human lung adenocarcinoma A549 cells (Miquel, K., Pradines, A., and Favre, G. (1996) Biochem. Biophys. Res. Commun. 225, 869-876). Here we demonstrate that isoprenoid-induced apoptosis was preceded by an arrest in G0/G1 phase. The isoprenoid effects were independent of protein prenylation and of mitogen-activated protein kinase activity. Moreover, geranylgeraniol and farnesol induced a rapid inhibition of phosphatidylcholine biosynthesis at the last step of the CDP-choline pathway controlled by choline phosphotransferase and not at the level of CTP:phosphocholine cytidylyltransferase, the key enzyme of the pathway. Inhibition of choline phosphotransferase was confirmed by in vitro assays on microsomal fractions, which clearly showed that the isoprenoids acted by competitive inhibition with the diacylglycerol binding. Exogenous phosphatidylcholine addition prevented all the biological effects of the isoprenoids, including actin fiber disorganization and apoptosis, suggesting that inhibition of phosphatidylcholine biosynthesis might be the primary event of the isoprenoid action. These data demonstrate the molecular mechanism of geranylgeraniol and farnesol effects and suggest that the mevalonate pathway, leading notably to prenylated proteins, might be linked to the control of cell proliferation through the regulation of phosphatidylcholine biosynthesis.     

Comparison of Modeling Approaches for the Capacitance–Voltage and Current–Voltage Characteristics of Advanced Gate Stacks

In this paper, we compare the capacitance-voltage and current-voltage characteristics of gate stacks calculated with different simulation models developed by seven different research groups, including open and closed boundaries approaches to solve the Schroumldinger equation inside the stack. The comparison has been carried out on template device structures, including pure SiO₂ dielectrics and high-kappa stacks, forcing the use of the same physical parameters in all models. Although the models are based on different modeling assumptions, the discrepancies among results in terms of capacitance and leakage current are small. These discrepancies have been carefully investigated by analyzing the individual modeling parameters and the internal quantities (e.g., tunneling probabilities and subband energies) contributing to current and capacitance     

Injection efficiency of CHISEL gate currents in short MOS devices:physical mechanisms, device implications, and sensitivity totechnological parameters

This paper analyzes MOSFET gate currents in the so-called channel initiated secondary electron injection regime (CHISEL). A Monte Carlo model of the phenomenon is validated and then extensively used to explore CHISEL scaling laws. Results indicate that, compared to conventional channel hot electron injection (CHE), CHISEL exhibits a weaker dependence on channel length and a larger sensitivity to short channel effects. These results are confirmed experimentally and exhaustively explained with the help of simulations; furthermore, some of their possible detrimental consequences on the programming efficiency of CHISEL based flash cells are analyzed. Finally, the impact of channel doping, oxide thickness, and junction depth on CHISEL efficiency has been explored, and guidelines to maintain high injection efficiency in short devices are derived     

Gettering by heat thermal processing: application in crystalline silicon solar cells

The aim of this work is to getter unwanted impurities from solar grade crystalline silicon (Si) wafers and then to enhance their electronic properties. This was done by forming a sacrificial porous silicon (PS) layer on both sides of the Si wafers and by performing infrared (IR) thermal annealing treatments (at around 950 °C) in a SiCl₄/N₂ controlled atmosphere. The process allows concentrating unwanted impurities in the PS layer and near the PS/silicon interface. These treatments reduce the resistivity by about two orders of magnitude at a depth of about 40 μm and improve the minority carrier diffusion length from 75 to 210 μm. This gettering method was also tested on silicon wafers where grooved fingers and back contacts were achieved using a chemical vapor etching (CVE) method. Front buried metallic contacts and small holes for local back surface field were then achieved after the gettering stage in order to realize silicon solar cells. It was shown that the photovoltaic parameters of gettered silicon solar cells were improved as regard to ungettered ones.     

Effect of the gap size on the SSI efficiency of split-gate memory cells

In this paper, new experimental results on the injection efficiency of split-gate memory cells programmed in the source-side-injection mode are reported. It is shown that the gap size has a negligible effect on the cell injection efficiency and, when the read current is not a limiting factor, it can be made large in order to increase the breakdown voltage of the oxide in the gap region, thus enhancing the cell reliability without detrimental effects on the performance. The experimental data is interpreted with the aid of fullband Monte Carlo simulations.     

Damage generation and location in n- and p-MOSFETs biased in theSubstrate-Enhanced Gate Current regime

This paper analyzes MOSFET degradation in the regime of hot carrier injection enhanced by substrate bias Substrate-Enhanced Gate Current (SEGC). The results are compared with the damage generated during conventional Channel Hot Carrier (CHC) stress experiments. The investigation was carried out on state of the art n⁺-poly n-MOSFETs and p⁺-poly p-MOSFETs, and it includes both a detailed characterization of standard electrical parameters (i.e., threshold voltage, drain current and linear transconductance) and a spatial profiling of stress-induced interface states. Our results reveal that the application of a substrate bias enhances degradation on both n-MOS and p-MOS devices and spreads toward the center of the channel the spatial profile of the damage. For a given gate current and oxide field in the injection region, the total amount of the generated damage is quite similar in both cases, but in the SEGC regime, the spatial distribution of generated traps is more distributed along the channel