Enhanced carrier confinement in AlInGaN-InGaN quantum wells in near ultraviolet light-emitting diodes

To increase carrier confinement, the GaN barrier layer was substituted with an AlInGaN quaternary barrier layer which was lattice-matched to GaN in the GaN-InGaN multiple quantum wells (MQWs). Photoluminescence (PL) and high-resolution X-ray diffraction measurements showed that the AlInGaN barrier layer has a higher bandgap energy than the originally used GaN barrier layer. The PL intensity of the five periods of AlInGaN-InGaN MQWs was increased by three times compared to that of InGaN-GaN MQWs. The electroluminescence (EL) emission peak of AlInGaN-InGaN MQWs ultraviolet light-emitting diode (UV LED) was blue-shifted, compared to a GaN-InGaN MQWs UV LED and the integrated EL intensity of the AlInGaN-InGaN MQWs UV LED increased linearly up to 100 mA. These results indicated that the AlInGaN-InGaN MQWs UV LED has a stronger carrier confinement than a GaN-InGaN MQWs UV LED due to the larger barrier height of the AlInGaN barrier layer compared to a GaN barrier layer.     

Selective wet etching of p-GaN for efficient GaN-based light-emitting diodes

The selective wet etching of a p-GaN layer by using a solution of KOH in ethylene glycol (KE) was studied to enhance the optical and electrical performance of the GaN-based light-emitting diodes (LEDs). The surface of the p-GaN, which was selectively etched in the KE solution, showed hexagonal-shaped etch pits. The light-output power of etched LEDs was improved by 29.4% compared to that of the nonetched LED. This improvement was attributed to the increase in the probability of photons to escape due to the increased surface area of textured surface and the reduction in contact resistance of the ohmic layer resulting from the increased contact area and hole concentration on the textured p-GaN. The reverse leakage current of the LED was also greatly decreased due to the surface passivation and the removal of defective regions from the p-GaN.     

Effects of deposition temperature on characteristics of Ga-doped ZnO film prepared by highly efficient cylindrical rotating magnetron sputtering for organic solar cells

We report the characteristics of Ga-doped zinc oxide (GZO) films prepared by a highly efficient cylindrical rotating magnetron sputtering (CRMS) system as a function of substrate temperature for use as a transparent conducting electrode in bulk hetero-junction organic solar cells (OSCs). Using a rotating cylindrical GZO target, low sheet resistance (∼11.67 Ω/square) and highly transparent (90%) GZO films were deposited with high usage (∼80%) of the cylindrical GZO target. High usage of the cylindrical GZO target in the CRMS system indicates that CRMS is a promising deposition technique to prepare cost-efficient GZO electrodes for low cost OSCs. Resistivity and optical transmittance of the CRMS-grown GZO film were mainly affected by substrate temperature because the grain size and activation of the Ga dopant were critically dependent on the substrate temperature. In addition, the performance of OSC fabricated on GZO electrode sputtered at 230 °C (11.67 Ω/square) is better than OSC fabricated on as-deposited GZO electrode (29.20 Ω/square). OSCs fabricated on the GZO electrode sputtered at 230 °C showed an open circuit voltage of 0.558 V, short circuit current of 8.987 m A/cm², fill factor of 0.628 and power conversion efficiency of 3.149%.     

Microbiological and visual quality of fresh-cut cabbage as affected by packaging treatments

Microbiological behavior of fresh-cut cabbage as affected by packaging treatments including high oxygen (MAP1: 70 kPa O₂+15 kPa CO₂/balanced N₂), low oxygen (MAP₂: 5 kPa O₂+15 kPa CO₂/balanced N₂), and moderate vacuum (MVP), in combination with gas permeable (LDPE) and barrier (Ny/PE) films, was investigated. Spoilage bacteria and pathogens were inoculated on shredded cabbage, and observed for viable cell counts during storage at 5°C. Overall population of the tested bacteria was noticeably reduced in MAP1 with Ny/PE, but was little influenced by MAP2. However, the inoculated bacteria in MVP with Ny/PE significantly increased or leveled off. In sensory evaluation, the barrier packages maintained better visual quality compared to the permeable. Results indicate that packages with high O₂ and CO₂ in the barrier film showed considerable microbial inhibition without deteriorating visual quality. Therefore, it can be applied as a promising tool to secure microbial safety of fresh-cut vegetables at refrigerated temperatures.     

Imidazolium-Functionalized Diacetylene Amphiphiles: Strike a Lighter and Wear Polaroid Glasses to Decipher the Secret Code

The development of smart inks that change color and transparency in response to external stimuli is very important for various fields, from modern art to safety and anticounterfeiting technology. A uniaxially oriented diacetylene thin film on a macroscopic area is obtained by coating, self-assembling and topochemical photopolymerizing of imidazolium-functionalized diacetylenes (M-DA and T-DA) and 4,6-decadiyne ink (70 wt%:20 wt%:10 wt%) exhibiting a lyotropic smectic A liquid-crystalline phase at room temperature. The color and transparency of letters and symbols written with the DA-based secret inks change reversibly from blue to red as well as from colorless transparent to black opaque depending on the temperature and polarization axis. A secret code written with thermoresponsive and polarization-dependent secret inks consisting of imidazolium-functionalized diacetylenes is successfully deciphered by wearing polaroid glasses and holding a burning torch.     

Mechanical flexibility of transparent PEDOT:PSS electrodes prepared by gravure printing for flexible organic solar cells

The mechanical flexibility of transparent poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) films printed onto a flexible PET substrate using a gravure printing method was investigated using a lab-made bending test system. Gravure-printed PEDOT:PSS electrodes with a sheet resistance of 359 Ω/square and a transparency of 88.92% showed outstanding flexibility in several types of flexibility tests, including outer/inner bending, twisting and stretching. Notably, the PEDOT:PSS electrode had a constant resistance change (ΔR/R₀) within an outer and inner bending radius of 10 mm. In addition the stretched PEDOT:PSS electrode showed a fairly constant resistance change (ΔR/R₀) up to 4%, which is more stable than the resistance change of conventional amorphous ITO electrode. The twisting test revealed that the resistance of the PEDOT:PSS electrode began to increase at an angle of 36° due to delamination of the film from the PET substrate. Despite the high sheet resistance of the PEDOT:PSS electrode the flexible organic solar cells fabricated on the PEDOT:PSS electrode showed a power conversion efficiency of ∼2% (FF: 44.9%, V_o: 0.495 V and J_sc: 9.1 mA/cm²), indicating the possibility of using gravure printed PEDOT:PSS as a flexible and transparent electrode for printing-based flexible organic solar cells.     

Electrical conduction through self-assembled monolayers in molecular junctions: Au/molecules/Au versus Au/molecule/PEDOT:PSS/Au

We fabricated and characterized a large number of octanedithiol (denoted as DC8) molecular devices as vertical metal–molecule–metal structure with or without using an intermediate conducting polymer layer of poly (3,4-ethylenedioxythiophene) stabilized with poly(4-styenesulfonic acid) (called as PEDOT:PSS). The electronic transport properties of DC8 molecular devices with and without PEDOT:PSS layer were statistically compared in terms of current density and device yield. The yields of the working molecular devices were found to be ~ 1.75% (84 out of 4800 devices) for Au/DC8/Au junctions and ~ 58% (74 out of 128 devices) for Au–DC8/PEDOT:PSS/Au junctions. The tunneling decay constants were obtained with the Simmons tunneling model and a multibarrier tunneling model for two kinds of molecular devices with and without PEDOT:PSS layer.     

Characteristics of indium-free GZO/Ag/GZO and AZO/Ag/AZO multilayer electrode grown by dual target DC sputtering at room temperature for low-cost organic photovoltaics

We compared the electrical, optical, structural and surface properties of indium-free Ga-doped ZnO (GZO)/Ag/GZO and Al-doped ZnO (AZO)/Ag/AZO multilayer electrodes deposited by dual target direct current sputtering at room temperature for low-cost organic photovoltaics. It was shown that the electrical and optical properties of the GZO/Ag/GZO and AZO/Ag/AZO multilayer electrodes could be improved by the insertion of an Ag layer with optimized thickness between oxide layers, due to its very low resistivity and surface plasmon effect. In addition, the Auger electron spectroscopy depth profile results for the GZO/Ag/GZO and AZO/Ag/AZO multilayer electrodes showed no interfacial reaction between the Ag layer and GZO or AZO layer, due to the low preparation temperature and the stability of the Ag layer. Moreover, the bulk heterojunction organic solar cell fabricated on the multilayer electrodes exhibited higher power conversion efficiency than the organic solar cells fabricated on the single GZO or AZO layer, due to much lower sheet resistance of the multilayer electrode. This indicates that indium-free GZO/Ag/GZO and AZO/Ag/AZO multilayer electrodes are a promising low-cost and low-temperature processing electrode scheme for low-cost organic photovoltaics.     

In situ synthesis of thermochemically reduced graphene oxide conducting nanocomposites

Highly conductive reduced graphene oxide (GO) polymer nanocomposites are synthesized by a well-organized in situ thermochemical synthesis technique. The surface functionalization of GO was carried out with aryl diazonium salt including 4-iodoaniline to form phenyl functionalized GO (I-Ph-GO). The thermochemically developed reduced GO (R-I-Ph-GO) has five times higher electrical conductivity (42,000 S/m) than typical reduced GO (R-GO). We also demonstrate a R-I-Ph-GO/polyimide (PI) composites having more than 10(4) times higher conductivity (~1 S/m) compared to a R-GO/PI composites. The electrical resistances of PI composites with R-I-Ph-GO were dramatically dropped under ~3% tensile strain. The R-I-Ph-GO/PI composites with electrically sensitive response caused by mechanical strain are expected to have broad implications for nanoelectromechanical systems.     

Significant vertical phase separation in solvent-vapor-annealed poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) composite films leading to better conductivity and work function for high-performance indium tin oxide-free optoelectronics

In the present study, a novel polar-solvent vapor annealing (PSVA) was used to induce a significant structural rearrangement in poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) films in order to improve their electrical conductivity and work function. The effects of polar-solvent vapor annealing on PEDOT:PSS were systematically compared with those of a conventional solvent additive method (SAM) and investigated in detail by analyzing the changes in conductivity, morphology, top and bottom surface composition, conformational PEDOT chains, and work function. The results confirmed that PSVA induces significant phase separation between excess PSS and PEDOT chains and a spontaneous formation of a highly enriched PSS layer on the top surface of the PEDOT:PSS polymer blend, which in turn leads to better 3-dimensional connections between the conducting PEDOT chains and higher work function. The resultant PSVA-treated PEDOT:PSS anode films exhibited a significantly enhanced conductivity of up to 1057 S cm(-1) and a tunable high work function of up to 5.35 eV. The PSVA-treated PEDOT:PSS films were employed as transparent anodes in polymer light-emitting diodes (PLEDs) and polymer solar cells (PSCs). The cell performances of organic optoelectronic devices with the PSVA-treated PEDOT:PSS anodes were further improved due to the significant vertical phase separation and the self-organized PSS top surface in PSVA-treated PEDOT:PSS films, which can increase the anode conductivity and work function and allow the direct formation of a functional buffer layer between the active layer and the polymeric electrode. The results of the present study will allow better use and understanding of polymeric-blend materials and will further advance the realization of high-performance indium tin oxide (ITO)-free organic electronics.