20 Gbit/s soliton transmission using alternating dispersionarrangement in standard fibre systems

An alternating dispersion arrangement is proposed for soliton systems with dispersion compensation to improve soliton stabilisation. A transmission experiment at 20 Gbit/s over 2600 km long singlemode fibre was successfully demonstrated by employing this novel dispersion arrangement     

Simulation with an improved plasma model utilized to design a new structure of microwave plasma discharge for chemical vapor deposition of diamond crystals

A new structure of microwave plasma for chemical vapor deposition of diamond crystal is proposed. The structure is designed numerically, for which an improved model given in our previous work [H. Yamada et al., J. Appl. Phys. 101 (2007), art. no. 063302.] is utilized. The experimental observations and numerical predictions agree well with each other. It is demonstrated experimentally that the proposed structure can achieve a growth rate larger than 50 μm/h over an area 1 in. in diameter.     

Large macro-dipoles generated in a supramolecular polymer of N,N′,N″-tris(3,7-dimethyloctyl)benzene-1,3,5-tricarboxamide in n-decane

A supramolecular polymer formed by N,N′,N″-tris(3,7-dimethyloctyl)benzene-1,3,5-tricarboxamide (DO₃B) in n-decane (C₁₀) possesses large macro-dipoles naturally generated by three-fold inter-molecular hydrogen bonding aligned along its helical columnar structure connected by defective portions, which are DO₃B molecules containing failure in the hydrogen bond formation, in the order of head to tail arrangement without dipole inversion like type-A polymers.     

Self-aligned fabrication of single crystal diamond gated field emitter array

This paper describes a self-aligned fabrication process for diamond gated field emitter array (FEA). Utilizing the non-conformal coverage sputtering conditions of silicon oxide, an interesting “sphere on cone” structure is formed on diamond nano tip array, which is the key point of gate hole opening process. This structure causes shadowing at certain regions of side-wall during Ti / Au gate metal deposition. Removal of “sphere” by wet etching leads to the successful fabrication of a single crystalline diamond gated FEA. Scanning electron microscope observations reveal the fabrication of a uniform emitter array with tip radius of curvature (20 nm) and gate hole (1.4 μm). We also confirmed that no noticeable physical damage exists on tip. In field emission characteristics of the fabricated single crystal diamond gated FEA, gate voltage control of field emission current is realized.     

Therapeutic effects of prostacyclin analog on crescentic glomerulonephritis of rat

Prostacyclin (PGI2) is known to have a relaxative action on vascular smooth muscle, an inhibitory action against platelet activation and neutrophil function. Previous studies showed the preventive effects of PGI2 on lupus nephritis and Thy-1 nephritis, although the mechanism has not been clarified. Glomerular endothelial expression of intercellular adhesion molecule-1 (ICAM-1) is up-regulated in experimental and human glomerular diseases, and is known to facilitate leukocyte infiltration into the glomeruli, which ultimately induces the various glomerular injuries. In the present study, we evaluated the therapeutic effects of PGI2 on a rat model for crescentic glomerulonephritis and investigated its putative mechanism in relation to ICAM-1-mediated leukocyte recruitment. Wistar-Kyoto (WKY) rats were injected with nephrotoxic serum and received continuous intraperitoneal infusion of PGI2. PGI2 dramatically decreased proteinuria (123.0 +/- 18.8 vs. 31.6 +/- 4.5), crescent formation and deposition of fibrinogen in the glomeruli, while the deposition of rabbit IgG, rat IgG and rat C3 along the capillary walls was not changed. Furthermore, intraglomerular expression of ICAM-1 and infiltration of macrophages were significantly suppressed by administration with PGI2. In contrast, influx of CD4 or CD8 positive cells was not altered. The present results suggest that PGI2 shows the preventive effects on experimental crescentic glomerulonephritis by inhibiting intraglomerular coagulation and ICAM-1-mediated macrophage-glomerular endothelial cell adhesive pathway.     

Simulation of characteristics of a SiO2/c-axis-oriented LiNbO3/diamond surface acoustic wave

High-frequency surface acoustic wave (SAW) devices based on diamond that have been realized to date utilize c-axis-oriented ZnO as the piezoelectric thin film. This material, with SiO2 overlay, shows excellent characteristics of a high phase velocity of over 10,000 m/s and a zero temperature coefficient, and it has been successfully applied to high-frequency SAW filters and resonators. To expand on materials used on diamond, the theoretical calculation has been carried out for LiNbO3/diamond, and a high electromechanical coupling coefficient up to 9.0% is expected. In this work, the characteristics of SiO2/LiNbO3/diamond were studied by computer simulation, emphasizing a zero temperature coefficient with a high coupling coefficient. Calculations are carried out for the phase velocity, the electromechanical coupling coefficient, and the temperature coefficient of the Rayleigh wave and its higher mode Sezawa wave. As a result, SiO2/IDT/LiNbO3/diamond is found to offer a zero temperature coefficient with a very high coupling coefficient up to 10.1% in conjunction with a high phase velocity of 12,100 m/s.     

A case of venous aneurysm

A 70-year-old woman was referred to our hospital with a complaint of a soft mass at the right elbow. Venography demonstrated that the mass was connected with vein. This mass was surgically removed and histologically a marked reduction of both elastic fibers and the adventitia were observed in the aneurysmal wall. Venous aneurysm (VA) is different form varicose veins by many features. It was considered that congenital fragility of the venous walls was associated with the onset of VA. We classified VA into type-I VA (cystic ectasia) and type II (fusiform ectasia).     

Surface stress measurement with interference microscopy of thick homoepitaxial single-crystal diamond layers

In this article, we present a study of surface stress measurements of a thick single-crystal diamond (SCD) layer (110 μm) deposited onto a high-temperature high-pressure (HTHP) Ib substrate. The measurement is based on observations of the deformation of the backside of the HTHP substrate due to internal stress that varies as the thickness of the SCD layer is modified by ion-beam etching. The deformation is obtained from the height-distribution analysis of interference microscopy (IM) observation. The results show that the tensile surface stress σ increases linearly with SCD-layer thickness with t_f according to σ = 0.065t_f MPa/μm. The tensile surface stress may be attributed to the intrinsic stress that originates from the lattice mismatch between the CVD-diamond layer and the HTHP-Ib substrate. The increased internal stress is a principle cause of crack formation of the crystal.     

Measurement of charge carrier's transportation in a large size self-standing CVD single crystal diamond film fabricated using lift-off method

Using lift-off method, we synthesized large self-standing plasma CVD diamond films on various substrates. Charge carrier transportation in diamond was measured using α particle measurements and TOF methods with a short-pulsed UV laser. The high-quality films were synthesized rapidly. We observed the maximum transit time of holes and electrons shorter than 5 ns. The lift-off method is useful to fabricate the high-quality diamond with excellent drift velocities of the charge carrier. The charge transport characteristics of our diamond films are comparable to those of a commercially available (Element Six Ltd.) electronics grade IIa diamond single crystal.