Leaching of a copper flotation concentrate with ammonium persulfate in an autoclave system

The leaching behavior of a copper flotation concentrate was investigated using ammonium persulfate （APS） in an autoclave systee. The decomposition products of APS, active oxygen, and acidic medium were used to extract metals from the concentrate. Leaching experiments were performed to compare the availability of APS as an oxidizing agent for leaching of the concentrate under atmospheric conditions and in an autoclave system. Leaching temperature and APS concentration were found to be important parameters in both leaching systems. Atmospheric leaching studies showed that the metal extractions increased with the increase in APS concentration and temperature （up to 333 K）. A similar tendency was determined in the autoclave studies up to 423 K. It was also determined that the metal extractions decreased at temperatures above 423 K due to the passivation of the particle surface by molten elemental sulfur. The results showed that higher copper extractions could be achieved using an autoclave system.     

Supplier selection with an integrated methodology in unknown environment

This paper proposes an integrated methodology and its solution for supplier selection problem. A two-stage stochastic programming model and fuzzy TOPSIS methods are consolidated in this methodology. After pre-research phase, in the second part of the methodology, fuzzy TOPSIS is used for ranking potential suppliers considering qualitative data under fuzzy environment. In the third part of the methodology a group of ranked potential suppliers are included in a two-stage stochastic programming model for evaluation. In the two-stage stochastic programming model demand is assumed as uncertain and different scenarios are generated for this parameter. With this methodology, supplier evaluation procedure can be done in unknown environment. Our methodology is interested with a problem in multi-product, multi-period and multi-sourcing environment.     

Thermoelastic transition kinetics of a gamma irradiated CuZnAl shape memory alloy

Many types of shape memory alloys have been used in nuclear reactors and aerospace applications where they are exposed to high levels of various kinds of radiation. The effect of gamma irradiation on the transformation kinetics of thermoelastic transformations in a shape memory CuZnAl alloy was investigated by differential scanning calorimetry (DSC) with heating/cooling rates of 10, 20, 30 and 40 °C/min. Irradiation doses of 10, 20, 30 and 40 kGy were applied to the samples of the alloy. Changes in Gibbs free energies, entropies and elastic energies were calculated. Reverse transition temperatures A _s and A _f systematically decreased with increasing doses, although forward transition temperatures M _s and M _f underwent a minimum value at a dose of 20 kGy. Hysteresis in the transition temperatures changed as an inverse parabolic function of the irradiation dose. The activation energies of transformations were calculated by using Kissinger and Osawa methods.     

Inactivation of Penicillum expansum in sour cherry juice, peach and apricot nectars by pulsed electric fields

Inhibitory effects of pulsed electric fields (PEF) on Penicillum expansum inoculated into sour cherry juice, apricot and peach nectars were determined based on germination tube elongation, spore germination rate, and light and scanning electron microscopy (SEM) observations in this study. After inoculation of juice/nectar samples with P. expansum spores at the level of 10(5)-10(6)cfu/mL, the samples were processed by bench scale PEF pulse generator as a function of differing electric field strengths (0, 13, 17, 20, 23, 27, 30 and 34kV/cm) and processing times (0, 62, 94, 123, 163, 198 and 218mus). Results revealed that with an increase in electric field strength and processing time, germination tube elongation and spore germination rate were completely inhibited. Light and SEM observations revealed considerable morphological alterations in fungal conidia such as cytoplasmic coagulation, vacuolations, shrinkage and protoplast leakage. PEF processing of juice/nectars was demonstrated to be effective in inactivating P. expansum. To our knowledge, this is the first study confirming the inhibitory effects of PEF on germination tube elongation and spore germination rate of P. expansum in fruit juice/nectars.     

Atom Probe Tomography of Zinc Oxide Nanowires

Wide-bandgap zinc oxide (ZnO) semiconductors and nanowires have become important materials for electronic and photonic device applications. In this work, we report the growth of well-aligned single-crystal ZnO nanowire arrays on sapphire substrates by chemical vapor deposition and the development of atom probe tomography, an emerging nanoscale characterization method capable of providing deeper insight into the three-dimensional distribution of atoms and impurities within its structure. Using a metal-catalyst-free approach, the influence of the growth parameters on the orientation and density of the nanowires were studied. The resulting ZnO nanowires were determined to be single crystalline, with diameter on the order of 50 nm to 150 nm and length that could be controlled between 0.5 μm to 20 μm. Their density was on the order of high 10⁸ cm⁻² to low 10⁹ cm⁻². In addition to routine characterizations using scanning and transmission electron microscopy, x-ray diffraction, photoluminescence, and Raman spectroscopy, we developed the atom probe tomography technique for ZnO nanowires, comparing the voltage pulse and laser pulse modes. In-depth analysis of the data was carried out to determine the accurate chemical composition of the nanowires and reveal the incorporation of nitrogen impurities. The current–voltage characteristics of individual nanowires were measured to determine their electrical properties.     

Properties of sol–gel synthesized n-ZnO/n-GaN (0001) isotype heterojunction

The electronic and optical properties of sol–gel synthesized n-ZnO/n-GaN (0001) isotype heterojunction were reported. By incorporating ZnO–GaN with the same wurtzite structure and the similar lattice constant, a heterojunction was fabricated. The junction properties were evaluated by measuring the electrical characteristics. The n-ZnO/n-GaN heterostructure exhibits a non-ideal I–V behavior with the ideality factor greater than unity that could be ascribed to the interfacial layer, interface states and series resistance. The forward turn on voltage is about 0.7 V and the reverse breakdown voltage is more than 2 V. The optical band gaps of the ZnO film and GaN using optical absorption method were found to be 3.272 eV and 3.309 eV, respectively. The fundamental absorption edge in the film is formed by the direct allowed transitions.     

Controlling of electronic parameters of GaAs Schottky diode by poly(3,4-ethylenedioxithiophene)-block-poly(ethylene glycol) organic interlayer

The electronic properties of metal-organic semiconductor-inorganic semiconductor structure between GaAs and poly(3,4-ethylenedioxithiophene)-block-poly(ethylene glycol) organic film have been investigated via current-voltage and capacitance-voltage methods. The Au/PEDOT/n-GaAs contact exhibits a rectification behavior with the barrier height of 0.69 eV and ideality factor value of 3.94. The barrier height of the studied diode (0.67 eV) is lower than that of Ni/n-GaAs/In (0.85 eV) and Au/n-GaAs/In Schottky diodes. The decrease in barrier height of Au/n-GaAs/In Schottky diode is likely to be due to the variation in the space charge region in the GaAs. The obtained results indicate that control of the interfacial potential barrier for metal/n-GaAs diode was achieved using thin interlayer of the poly(3,4-ethylenedioxithiophene)-block-poly(ethylene glycol).