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排序方式: 共有884条查询结果,搜索用时 31 毫秒
1.
Increasing the reaction temperature of the living cationic polymerization of isobutylene is crucial for industrial production due to the cost of refrigeration. The reaction temperature increase was achieved with an accelerated reaction rate using a flow reaction system. The polymerization conditions, including the flow reactor design, were based on the results of kinetic studies. Utilizing a milli‐scale flow reactor, polyisobutylene, which has a narrow molecular weight distribution, was obtained within a considerably short residence time at a high temperature. Furthermore, it was confirmed that the value of Mw/Mn correlates with the product of the Reynolds number and the angle of collision. 相似文献
2.
Chou Y.C. Leung D. Lai R. Grundbacher R. Barsky M. Kan Q. Tsai R. Wojtowicz M. Eng D. Tran L. Block T. Liu P.H. Nishimoto M. Oki A. 《Electron Device Letters, IEEE》2003,24(6):378-380
The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications. 相似文献
3.
Yamanaka N. Kawano R. Oki E. Yasukawa S. Okazaki K. 《Advanced Packaging, IEEE Transactions on》2002,25(1):65-72
A 640-Gb/s high-speed ATM switching system that is based on the technologies of advanced MCM-C, 0.25-μm CMOS, and optical wavelength-division-multiplexing (WDM) interconnection is fabricated for future broadband backbone networks. A 40-layer, 160×114 mm ceramic MCM forms the basic ATM switch module with 80-Gb/s throughput. It consists of 8 advanced 0.25-μm CMOS LSIs and 32 I/O bipolar LSIs. The MCM has a 7-layer high-speed signal line structure having 50-Ω strip lines, high-speed signal lines, and 33 power supply layers formed using 50-μm thick ceramic layers to achieve high capacity. A uniquely structured closed-loop-type liquid cooling system for the MCM is used to cope with its high power dissipation of 230 W. A three-stage ATM switch is made using the optical WDM interconnection between high-performance MCMs. For WDM interconnection, newly developed compact 10-Gb/s, 8-WDM optical transmitter and receiver modules are used. These modules are each only 80×120×20 mm and dissipate 9.65 W and 22.5 W, respectively. They have a special chassis for cooling, which contains high-performance heat-conductive plates and micro-fans. An optical WDM router based on an arrayed waveguide router is used for mesh interconnection of boards. The optical WDM interconnect has 640-Gb/s throughput and simple interconnection 相似文献
4.
Masatsune Kato Takaaki Aoki Takashi Noji Yasuhiro Ono Yoji Koike Tomoyuki Hikita Yoshitami Saito 《Journal of Superconductivity and Novel Magnetism》1994,7(1):37-38
We have investigated the relation between the crystal structure and superconductivity in La1.9Bi0.1CuO4+δ , in which the phase separation observed in La2CuO4+δ is suppressed. A phase diagram in theT?δ plane is given for La1.9Bi0.1CuO4+δ with excess oxygen. For very smallδ values, the crystal structure is orthorhombic, and an orthorhombic-tetragonal phase transition occurs markedly atδ ~ 0.03 in the measured temperature range between 13 and 293 K. Superconductivity is observed in the range of 0.04<δ<0.11. This is clear evidence thathigh-T c superconductivity also appears in the tetragonal phase. 相似文献
5.
Hiroshi Ohta Tomoyuki Hirota Abdur Rahim 《The International Journal of Advanced Manufacturing Technology》2007,33(1-2):36-41
This paper analyzes a multi-product production / inventory system where demands for each item arrive according to a Poisson
process and the production time for each product has an Erlang distribution. The paper proposes an optimality condition that
specifies whether each product should be produced make-to-stock or make-to-order. In the event a product should be produced
make-to-stock, an approach for computing the optimal base-stock level is proposed. Numerical examples are given for illustrative
purpose. 相似文献
6.
Streit D.C. Hafizi M.E. Umemoto D.K. Velebir J.R. Tran L.T. Oki A.K. Kim M.E. Wang S.K. Kim C.W. Sadwick L.P. Hwu R.J. 《Electron Device Letters, IEEE》1991,12(5):194-196
The authors have fabricated n-p-n GaAs/AlGaAs heterojunction bipolar transistors (HBTs) with base doping graded exponentially from 5×1019 cm-3 at the emitter edge to 5×1018 cm-3 at the collector edge. The built-in field due to the exponentially graded doping profile significantly reduces base transit time, despite bandgap narrowing associated with high base doping. Compared to devices with the same base thickness and uniform base doping of 1×1019 cm-3 , the cutoff frequency is increased from 22 to 31 GHz and maximum frequency of oscillation is increased from 40 to 58 GHz. Exponentially graded base doping also results ill consistently higher common-emitter current gain than uniform base doping, even though the Gummel number is twice as high and the base resistance is reduced by 40% 相似文献
7.
Streit D.C. Oki A.K. Umemoto D.K. Velebir J.R. Stolt K.S. Yamada F.M. Saito Y. Hafizi M.E. Bui S. Tran L.T. 《Electron Device Letters, IEEE》1991,12(9):471-473
The authors have developed a modified MBE growth process to produce high-gain n-p-n GaAs-AlGaAs heterojunction bipolar transistors (HBTs) with a mean time to failure (MTTF) of 1.5×108 h at 125°C. Beryllium incorporation and diffusion are controlled through a combination of reduced substrate temperature and increased As/Ga flux ratio during MBE growth, resulting in extremely stable HBT profiles. The authors also demonstrate graded InGaAs surface layers with nonalloyed refractory metal contacts that significantly improve ohmic reliability compared to alloyed AuGe contacts. The ability to produce robust HBTs by MBE is critically important to this technology 相似文献
8.
9.
Huei Wang Kwo Wei Chang Tran L.T. Cowles J.C. Block T.R. Lin E.W. Dow G.S. Oki A.K. Streit D.C. Allen B.R. 《Solid-State Circuits, IEEE Journal of》1996,31(10):1419-1425
A family of millimeter-wave sources based on InP heterojunction bipolar transistor (HBT) monolithic microwave/millimeter-wave integrated circuit (MMIC) technology has been developed. These sources include 40-GHz, 46-GHz, 62-GHz MMIC fundamental mode oscillators, and a 95-GHz frequency source module using a 23.8-GHz InP HBT MMIC dielectric resonator oscillator (DRO) in conjunction with a GaAs-based high electron mobility transistor (HEMT) MMIC frequency quadrupler and W-band output amplifiers. Good phase noise performance was achieved due to the low 1/f noise of the InP-based HBT devices. To our knowledge, this is the first demonstration of millimeter-wave sources using InP-based HBT MMIC's 相似文献
10.
Tomoyuki Koga Shinya Kingetsu Nobuyuki Higashi 《International journal of molecular sciences》2021,22(9)
Self-assembly of artificial peptides has been widely studied for constructing nanostructured materials, with numerous potential applications in the nanobiotechnology field. Herein, we report the synthesis and hierarchical self-assembly of collagen-mimetic peptides (CMPs) bearing various aromatic groups at the N-termini, including 2-naphthyl, 1-naphtyl, anthracenyl, and pyrenyl groups, into nanofibers. The CMPs (R-(GPO)n: n > 4) formed a triple helix structure in water at 4 °C, as confirmed via CD analyses, and their conformations were more stable with increasing hydrophobicity of the terminal aromatic group and peptide chain length. The resulting pre-organized triple helical CMPs showed diverse self-assembly into highly ordered nanofibers, reflecting their slight differences in hydrophobic/hydrophilic balance and configuration of aromatic templates. TEM analysis demonstrated that 2Np-CMPn (n = 6 and 7) and Py-CMP6 provided well-developed natural collagen-like nanofibers and An-CMPn (n = 5–7) self-assembled into rod-like micelle fibers. On the other hand, 2Np-CMP5 and 1Np-CMP6 were unable to form nanofibers under the same conditions. Furthermore, the Py-CMP6 nanofiber was found to encapsulate a guest hydrophobic molecule, Nile red, and exhibited unique emission behavior based on the specific nanostructure. In addition to the ability of CMPs to bind small molecules, their controlled self-assembly enables their versatile utilization in drug delivery and wavelength-conversion nanomaterials. 相似文献