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排序方式: 共有1015条查询结果,搜索用时 453 毫秒
1.
Naoki Yokokawa Yutaro Masuda Eri Amasawa Hirokazu Sugiyama Masahiko Hirao 《Packaging Technology and Science》2020,33(11):445-459
This study presents systematic packaging design tools integrating functional and environmental consequences on product life cycle. To design packaging for sustainability, the trade-offs between functional and environmental aspects of packaging throughout the product life cycle should be considered. However, it is difficult for packaging designers to understand the overall trade-offs because the extent of the design consequences on the entire life cycle of packaging and its contents is unclear. We developed two tools for packaging design: the Life Cycle Association Matrix (LCAM) and the Function Network Diagram (FND). The following three steps, based on literature reviews and interviews with industrial experts, were applied. Firstly, we listed the product functions and design variables related to the functions as the attributes allocated to the product life cycle. Secondly, the attributes were connected appropriately based on causal relationships. Lastly, we identified the factors to support decision making in the packaging design procedure. As a result, the LCAM depicts the design consequences on the life cycle, and the FND determines the stakeholders affected by the design consequences. Two case studies were demonstrated to analyze the trade-offs by using our tools. In the case studies, a liquid laundry detergent bottle and a milk carton were redesigned. The tools identified the design consequences and stakeholders affected by the redesign of the usability and protective function for the detergent and milk cases, respectively. The results showed the significance of understanding the design consequences on the product life cycle by integrating the functional and environmental aspects. 相似文献
2.
Machine Learning - We consider the problem of learning a binary classifier from only positive and unlabeled observations (called PU learning). Recent studies in PU learning have shown superior... 相似文献
3.
A Synthetic Transcriptional Activator of Genes Associated with the Retina in Human Dermal Fibroblasts 下载免费PDF全文
4.
K. Fujii J. Fujimoto H. Hayashii R. Kajikawa Y. Masatani H. Ozaki A. Sugiyama R. Suzaki S. Suzuki T.Y. Tsukamoto T.F. Tsukamoto S. Uno S. Iwata 《Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment》1985,236(1):55-63
We constructed and tested a prototype gas sampling electromagnetic calorimeter of the Pb-proportional tube sandwich type. The calorimeter uses conductive plastic tubes and cathode pad readout with a tower structure which resulted in reasonable energy and spatial resolutions for electrons in the momentum range 0.5–4.0 GeV/c; /c). This paper describes the test and the performance studied under various conditions. 相似文献
5.
[110]-surface strained-SOI CMOS devices 总被引:1,自引:0,他引:1
Mizuno T. Sugiyama N. Tezuka T. Moriyama Y. Nakaharai S. Takagi S. 《Electron Devices, IEEE Transactions on》2005,52(3):367-374
We have newly developed [110]-surface strained-silicon-on-insulator (SOI) n- and p-MOSFETs on [110]-surface relaxed-SiGe-on-insulator substrates with the Ge content of 25%, fabricated by applying the Ge condensation technique to SiGe layers grown on [110]-surface SOI wafers. We have demonstrated that the electron and the hole mobility enhancement of [110]-surface strained-SOI devices amounts to 23% and 50%, respectively, against the mobilities of [110]-surface unstrained MOSFETs. As a result, the electron and the hole mobility ratios of [110]-surface strained-SOI MOSFETs to the universal mobility of (100)-surface bulk-MOSFETs increase up to 81% and 203%, respectively. Therefore, the current drive imbalance between n- and p-MOS can be reduced. Moreover, both the electron and the hole mobilities of the [110]-surface strained-SOIs strongly depend on the drain current flow direction, which is qualitatively explained by the anisotropic effective mass characteristics of the carriers on a [110]-surface Si. As a result, the [110]-surface strained-SOI technology with optimization of the current flow directions of n- and p-MOS is promising for realizing higher speed scaled CMOS. 相似文献
6.
We succeeded in the fabrication of bonded laser crystals composed of a neodymium-doped YVO4 laser crystal (Nd:YVO4) and its host crystals YVO4 by a newly developed dry etching technique using an argon ion beam. The optical distortion caused by the bonded interface of size 5 mm × 6 mm was estimated to be 0.05λ at 633 nm. From the comparison of laser performance pumped by a laser diode, the bonded crystals could increase the laser output power by nearly twice that of the non-bonded crystals with the same degree of polarization of 99.2%. To analyze the mechanism of the enhanced reduction of the thermal load in the bonded crystals, numerical simulations with a finite-element method were also performed. 相似文献
7.
8.
Y. Ohshima H.S. Ahn M. Aoki S. Awa M. Fukushima H. Hayashii X.Q. Hu T.W. Hur S. Igarashi H. Ikeda H.C. Jeong K. Kaneyuki D.Y. Kim S.K. Kim A. Kuzmin M.H. Lee S. Noguchi A. Ochi H. Sagawa N. Sato N. Sugiyama K. Tamai T. Tanimori N. Toomi T.J. Wang K. Watanabe Y. Watanabe X.C. Zhong Y.C. Zhu 《Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment》1996,380(3):517-523
We studied the performance of a prototype electromagnetic calorimeter for the BELLE detector at the KEK proton synchrotron for an energy range of 0.25–3.5 GeV. The prototype consisted of an array of 6 × 5 CsI(Tl) crystals with 30 cm length (16.2 radiation lengths) and about 6 cm × 6 cm cross section. The scintillation light of each CsI(Tl) crystal was read out by two large-area PIN photodiodes and charge-sensitive preamplifiers attached at the rear face of the crystal. We measured the energy and position resolution for electrons and the e/π separation for two sets of matrix configurations: one corresponded to the center and the other to the edge of the barrel calorimeter. The overall performance measured by the test proves that the prototype calorimeter is satisfactory for the use in the BELLE detector. 相似文献
9.
The gelation mechanism of agarose and κ-carrageenan aqueous solutions was investigated by using polarized light scattering and X-ray diffraction techniques in terms of the liquid-liquid phase separation. When an incident beam of He-Ne gas laser was directed to the gel prepared by quenching the agarose solution, the logarithm of scattered intensity increased linearly in the initial stage and tended to deviate from this linear relationship in the latter stage. If the linear increase in the initial stage could be analyzed within the framework of the linear theory of spinodal decomposition proposed by Cahn, the phase diagram indicated that the gelation is attributed to the phase separation due to the concentration fluctuation of solution. Furthermore, in the later stage showing the deviation of the linear relationship, light scattering under Hv polarization condition showed a X-type pattern indicating the existence of optically anisotropic rods, the optical axes being parallel or perpendicular with respect to the rod axis. In spite of the existence of the rods, no crystallites were confirmed by the corresponding X-ray diffraction and DSC measurements. For κ-carrageenan solutions, the logarithm of scattered intensity against time showed a constant value. This indicated that the gelation of κ-carrageenan solutions is independent of liquid-liquid phase separation but is due to the rapid formation of cross-linking points. Accordingly it turns out that the small difference of chemical structure between agarose and κ-carrageenan causes quite different gelation mechanism. 相似文献
10.
Tetsuya Suemitsu Yoshino K. Fukai Hiroki Sugiyama Kazuo Watanabe Haruki Yokoyama 《Microelectronics Reliability》2002,42(1):47-52
The reliability of InP-based HEMTs is studied, focussing on how it is affected by the doped layer material and gate recess structure. Bias-and-temperature stress tests reveal that fluorine-induced donor passivation in the recess region, formed adjacent to the gate electrode, causes the source resistance (Rs) to increase at large drain bias voltages. The increase in Rs can be prevented by using InP or InAlP as the carrier supply layer material instead of InAlAs. On the other hand, the increase in the drain resistance (Rd) does not depend on the material of the carrier supply layer, which suggests that a mechanism different from that in the case of Rs should be considered. It is also found that a deep gate recess suppresses the increase in Rd after long-term stressing. 相似文献