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An Al0.13GalnP sub-cell used as the top cell in the next generation of high efficiency multi-junction solar cells is fabricated. An efficiency of 10.04% with 1457.3 mV in Voc and 11.9 mA/cm2 in Isc was obtained. QE comparison was carried out to verify the influence of an O-related defect introduced by the high Al-content materials on the cell performance during MOCVD growth. Hetero-structures are employed to confirm the origin of the decreasing short circuit current density compared to a GalnP single junction solar cell. An effective method to improve the performance of broadband solar cells by increasing Isc with a cost of Voc was proposed. 相似文献
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GaInP and AlGaInP solar cells were grown by metal organic chemical vapor deposition (MOCVD), and theoretical analysis demonstrated that hetero-interface recombination velocity plays an important role in the optimizing of cell performance, especially the interface between base layer and back surface field (BSF). Measurements including lattice-matched growth and pseudo-BSF were taken to optimize BSF design. Significant improvement of Voc in GaInP and AlGaInP solar cells imply that the measures we took are effective and promising for performance improvement in the next generation high efficiency solar cells. 相似文献
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为了研究地下水中砷的去除机理,采用吸附和土柱模拟实验,研究了不同吸附介质、初始浓度和价态等因素对砷去除的影响.吸附实验结果表明,As(Ⅴ)在初始浓度为0.05 mmol/L的条件下,在水铁矿和针铁矿上的平均吸附率分别为35%和14%;As(Ⅴ)在初始浓度为0.01 mmol/L条件下,在水铁矿和针铁矿上的平均吸附率分别为87%和37%;As(Ⅲ)在初始浓度为0.01 mmol/L的条件下,在水铁矿和针铁矿上的平均吸附率分别为73%和39%.土柱模拟实验结果表明,As(Ⅴ)在细砂中的平均吸附率为72%,而在加入氢氧化铁的细砂中平均吸附率为93%;As(Ⅴ)在粗砂中的平均吸附率为80%,在加入氢氧化铁的粗砂中平均吸附率为93%;As(Ⅲ)在细砂和粗砂中的平均吸附率为99.9%.结果表明,砂土中加入Fe3+和OH-后由于产生的氢氧化铁有利于As的吸附,粗砂和细砂对As(Ⅲ)的吸附较强. 相似文献
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研制了应用于下一代高效多结太阳电池中的定电池的 Al0.13GaInP子电池,其实验室效率为10.04%,开路电压为1457.3mV,短路电流为11.9mA。使用量子效率来验证MOVPE生长过程中涉及高Al组分引起的O缺陷对电池性能的影响。相比GaInP单结电池,Al0.13GaInP电池的短路电流下降地较为厉害,实验中生长了GaInP/Al0.13GaInP异质结电池来分析其原因,因此也提出了以牺牲部分开路电压来提升短路电流的一种有效提升电池性能的方法。 相似文献
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现有1.0eV/0.75 eV InGaAsP/InGaAs双结太阳电池的开路电压小于各子电池的开路电压之和,鲜有研究探索开路电压损耗的来源以及如何抑制。通过研究发现,InGaAs底电池背场/基区界面处的少数载流子输运的主要机制是热离子发射,而不是缺陷诱导复合。SIMS测试表明,采用InP或InAlAs背场均不能有效抑制Zn掺杂剂的扩散。此外,由于生长过程中持续的高温热处理.,III-V族主元素在界面处发生了热扩散。为了抑制上述现象,提出了一种新型InP/InAlAs超晶格背场,并应用到InGaAs底电池中。制备得到的双结太阳电池在维持短路电流密度不变的情况下,开路电压提升到997.5 mV,与传统采用InP背场的双结太阳电池相比,开路电压损耗降低了30 mV。该研究成果对提升四结太阳电池的整体开路电压有重要意义。 相似文献
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