Achieving Rich and Active Alkaline Hydrogen Evolution Heterostructures via Interface Engineering on 2D 1T‐MoS2 Quantum Sheets

Large‐scale production of hydrogen from water‐alkali electrolyzers is impeded by the sluggish kinetics of hydrogen evolution reaction (HER) electrocatalysts. The hybridization of an acid‐active HER catalyst with a cocatalyst at the nanoscale helps boost HER kinetics in alkaline media. Here, it is demonstrated that 1T–MoS₂ nanosheet edges (instead of basal planes) decorated by metal hydroxides form highly active ${\text{edge}}_{{\text{1T‐MoS}}_{\text{2}}}$/ ${\text{edge}}_{\text{Ni}{(\text{OH})}_{\text{2}}}$ heterostructures, which significantly enhance HER performance in alkaline media. Featured with rich ${\text{edge}}_{{\text{1T‐MoS}}_{\text{2}}}$/ ${\text{edge}}_{\text{Ni}{(\text{OH})}_{\text{2}}}$ sites, the fabricated 1T–MoS₂ QS/Ni(OH)₂ hybrid (quantum sized 1T–MoS₂ sheets decorated with Ni(OH)₂ via interface engineering) only requires overpotentials of 57 and 112 mV to drive HER current densities of 10 and 100 mA cm^?2, respectively, and has a low Tafel slope of 30 mV dec^?1 in 1 m KOH. So far, this is the best performance for MoS₂‐based electrocatalysts and the 1T–MoS₂ QS/Ni(OH)₂ hybrid is among the best‐performing non‐Pt alkaline HER electrocatalysts known. The HER process is durable for 100 h at current densities up to 500 mA cm^?2. This work not only provides an active, cost‐effective, and robust alkaline HER electrocatalyst, but also demonstrates a design strategy for preparing high‐performance catalysts based on edge‐rich 2D quantum sheets for other catalytic reactions.     

A New NTRU-Type Public-Key Cryptosystem over the Binary Field

As the development of cloud computing and the convenience of wireless sensor netowrks, smart devices are widely used in daily life, but the security issues of the smart devices have not been well resolved. In this paper, we present a new NTRU-type public-key cryptosystem over the binary field. Specifically, the security of our scheme relies on the computational intractability of an unbalanced sparse polynomial ratio problem (DUSPR). Through theoretical analysis, we prove the correctness of our proposed cryptosystem. Furthermore, we implement our scheme using the NTL library, and conduct a group of experiments to evaluate the capabilities and consuming time of encryption and decryption. Our experiments result demonstrates that the NTRU-type public-key cryptosystem over the binary field is relatively practical and effective.     

Structure, properties, and thermal stability of nanocrystallite Fe-Ti-N soft magnetic films

We deposited Fe-Ti-N magnetic films with a high sputtering power of 7 W/cm/sup 2/. When the composition of the films was in the range of Fe-Ti(3.9 at.%)-N(8.8 at.%) to Fe-Ti(3.3 at.%)-N(13.5 at.%), the films were composed of /spl alpha/' and Ti/sub 2/N precipitates. With the addition of nitrogen, 4/spl pi/M/sub s/ became higher than that of pure iron, reaching a maximum of 23.8 kG. At the same time, H/sub c/ was reduced to a minimum of 1.12 Oe. The best films can meet the needs of the recording head in dual-element giant magnetoresistive/inductive heads, yielding high storage density (10 Gb/in/sup 2/). The incorporation of N in /spl alpha/-Fe brought about the /spl alpha/' phase with its higher saturation magnetization. Ti additions inhibited the equilibrium decomposition /spl alpha/'/spl rarr//spl alpha/+/spl gamma/'. Because H/sub C//sup D//spl prop/D/sup 6/, where D is average grain diameter, grain size control is very important. The nitrogen induces severe distortion of the /spl alpha/' lattice, which can cause the grains to break into pieces and reduce the grain size. High sputtering power also led to the formation of fine grains, with diameter in the order of 14 nm. Probably Ti/sub 2/N is preferentially precipitated on the grain boundary, pinning the grain boundary and stabilizing the grain size during high-temperature heat treatment. The temperature limit for stability of the structure and its associated low coercivity was not less than 520/spl deg/C.     

Exposed Die-Top Encapsulation Molding for an Improved High- Performance Flip Chip BGA Package

The recent advancement in high- performance semiconductor packages has been driven by the need for higher pin count and superior heat dissipation. A one-piece cavity lid flip chip ball grid array (BGA) package with high pin count and targeted reliability has emerged as a popular choice. The flip chip technology can accommodate an I/O count of more than five hundreds500, and the die junction temperature can be reduced to a minimum level by a metal heat spreader attachment. None the less, greater expectations on these high-performance packages arose such as better substrate real estate utilization for multiple chips, ease in handling for thinner core substrates, and improved board- level solder joint reliability. A new design of the flip chip BGA package has been looked into for meeting such requirements. By encapsulating the flip chip with molding compound leaving the die top exposed, a planar top surface can be formed. A, and a flat lid can then be mounted on the planar mold/die top surface. In this manner the direct interaction of the metal lid with the substrate can be removed. The new package is thus less rigid under thermal loading and solder joint reliability enhancement is expected. This paper discusses the process development of the new package and its advantages for improved solder joint fatigue life, and being a multichip package and thin core substrate options. Finite-element simulations have been employed for the study of its structural integrity, thermal, and electrical performances. Detailed package and board-level reliability test results will also be reported     

分布式光纤拉曼放大器的增益平坦设计

介绍了在波分复用（WDM）系统中分布式光纤拉曼放大器（FRA）的理论分析模型。在此基础上，对增益平坦设计所需考虑的因素进行了分析；最后通过试验证明了它的有效性。