一种应用于外设通信的EDMA控制器设计

本文介绍了一种应用于DSP系统中的EDMA控制器的设计。该控制器用于外设之间的大批量数据传输,其接口采用AXI3协议进行设计。控制器支持一维和二维DMA传输,可以进行突发传输和读写并发,也支持参数链接传输和通道链接传输,是一款高效通用的EDMA控制器。     

Investigation of the current collapse induced in InGaN back barrier AIGaN/GaN high electron mobility transistors

Current collapses were studied, which were observed in A1GaN/GaN high electron mobility transistors （HEMTs） with and without InGaN back barrier （BB） as a result of short-term bias stress. More serious drain current collapses were observed in InGaN BB A1GaN/GaN HEMTs compared with the traditional HEMTs. The results indicate that the defects and surface states induced by the InGaN BB layer may enhance the current collapse. The surface states may be the primary mechanism of the origination of current collapse in A1GaN/GaN HEMTs for short-term direct current stress.