用微机绘制排列图和直方图

本文介绍了将微机应用于质量管理中绘制排列图和直方图的方法,分别给出了程序框图,并给出了根据计算实例绘出的排列图和直方图。     

用银-氯化银作ISFET参比电极的可行性研究

本文叙述了用银-氯化银作参比电极的复合离子敏感场效应晶体管的制备、原理和测量结果。通过实验和理论分析,提出了用无液接的银-氯化银电极作参比电极的可行性和克服其不稳定性的途径;并对用银-氯化银参比电极测量Na+,Ca++等阳离子时,敏感场效应晶体管不符合能斯特响应的现象进行了解释。     

多因素决定产品质量控制图的绘制

此文介绍了产品质量控制图的含义和价值及控制图的基本形式,并结合生产实践中的具体例子论述了在多种因素作用工况下如何计算和绘制控制图。     

薄膜结构的复合氟离子敏感电极的研究􀀁

复合氟离子敏感电极是用热蒸发的方法在硅基片上制备的。参比电极用热蒸发的银－氟化银薄膜电极,为了提高氯化银薄膜的坚固性和可靠性,又在氯化银表面涂复一层１０００Ａ的含氯离子的有机聚合物薄膜。采用溶胶－凝胶法＾「１,２」制备二氧化硅对电极引线的焊点和器件的侧、背面进行封装,因此这种电极不仅体积小、可靠性高,而且,由于这些薄膜可以在蒸发台内依次完成,减少了污染,适于大规模生产。     

STUDY OF F~--ISFET

The fluorine ion sensitive field-effect transistor(F~--ISFET)is made by depositingvery thin LaF_3 film on grid of field-effect transistor with sputter method.The operating principle,measuring method and measured results of F~--ISFET are given.The measured results show thatthis kind of sensor has higher sensitivity,shorter response time and better linearity.On the basisof experimental results,the factor of influencing the steadiness and repeatability of F~--ISFETare conjectured.     

氟离子敏感场效应晶体管的研究

本文叙述了氟离子敏感场效应晶体管的原理,测试及其结果。这种对氟离子敏感的器件是用溅射的方法,在场效应晶体管的栅极上淀积一层很薄的氟化镧膜制成的。测试结果表明,这种器件灵敏度高,响应快,线性好。本文还从实验出发,对影响器件的稳定性和重复性的原因做了推测。     

STUDY OF FEASIBILITY OF USING Ag-AgCl ELECTRODE AS REFERENCE ELECTRODE OF THE ISFET

The preparation,principle and measurement results of the complex ISFET withAg-AgCl reference electrode are presented in this paper.Through experiment and theory weendeavor to show the feasibility of using the Ag-AgCl electrode which is without solution contactas reference electrode and the way of overcoming its instability;it gives a rational explanationfor phenomenon of the ion sensitive field effect transistor which does not conform to Nernstianresponse,when we measured cations of Na~+, Ca~(++),etc.with the Ag-AgCl reference electrode.