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BST薄膜的磁增强反应离子刻蚀研究 总被引:1,自引:1,他引:0
分别以CF4/Ar和CF4/Ar/O2作为刻蚀气体,采用磁增强反应离子刻蚀(MERIE)技术对sol-gel法制备的BST薄膜进行刻蚀。结果表明,刻蚀速率与刻蚀气体的混合比率呈现非单调特性。当CF4/Ar的气体流量比R(CF4:Ar)为10:40时,刻蚀速率达到极大值。当CF4/Ar/O2的气体流量比R(CF4:Ar:O2)为9:36:5时,刻蚀速率达到最大值,最大刻蚀速率为8.47nm/min。原子力显微镜(AFM)分析表明,刻蚀后的薄膜表面粗糙度变大。对刻蚀后的薄膜再进行适当的热处理,可以去除部分残留物。 相似文献
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Compositionally graded Ba1-xSrxTiO3 (BST) (x = 0-0.3) thin films were prepared on Pt/Ti/SiO2/Si substrate at different substrate temperatures ranging from 550 ℃ to 650 ℃ by radio-frequency (rf) magnetron sputtering. The effect of substrate temperature on the preferential orientation, microstructures and dielectric properties of compositionally graded BST thin films was investigated by X-ray diffraction, scanning electron microscopy and dielectric frequency spectra, respectively. As the temperature increases, the preferential orientation evolves in the order: randomly orientation→ (111) → highly oriented (111) (α(111)= 60.2%). The surface roughness of the graded BST thin films varies with the substrate temperatures. No visible internal interface in the compositionally graded thin films can be observed in the cross-sectional SEM images. The graded BST thin films deposited at 650 ℃ possess the highest dielectric constant and dielectric loss, which are 408 and 0.013, respectively. 相似文献
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