4H-SiC肖特基微型同位素电池(英文)

半导体同位素电池由于其寿命长、集成性优良、环境适应性强等特点成为解决MEMS能源问题的理想手段。利用4H-SiC材料的宽禁带特性,制造了4H-SiC肖特基同位素电池。对电池的耗尽层厚度以及掺杂浓度进行了优化设计,对肖特基金属进行了选择。使用4mCi/cm2的63Ni作为同位素电池的放射源对制造的同位素电池进行了测试。测试结果表明,该同位素电池可以获得31.3nW/cm2的功率密度、0.5V的开路电压、3.13×10-8A/cm2的短路电流密度和1.3%的转换效率。将电池的输出特性和硅基的平板型、3D结构电池输出特性进行了比较,证明4H-SiC肖特基同位素电池能够获得较高的功率密度。电池的性能可通过提升势垒高度、提高工艺质量、更换同位素等方式得到提高。     

A betavoltaic microbattery based on PIN diodes

A betavoltaic Microbattery was studied.The diode was composed of a PIN structure with an active area of 10 mm×10 mm to collect the charge from a 10mCi Ni-63 source.An open circuit voltage of 0.16 V and a short circuit current density of 67.6 nA/cm2 were measured.An efficiency (η) of 1.44% was obtained.The performance of device was limited by high series resistance,edge recombination and attenuation of electron in PIN diodes.It is expected to be improved by optimizing the design and using more suitable radioisotope.     

4H-SiC肖特基结式Alpha效应微型核电池

阐述了一种4H-SiC肖特基结式Alpha效应微型核电池.利用Schottky结取代常用的p-n结,在活度为0.025mCi/cm2的241Am源辐照下进行测试,得到了开路电压Voc为0.25 V、短路电流密度氏为7.64 nA/cm2和输出功率密度Pmax为1.12 nW/cm2.在对4H-SiC肖特基结研制过程中的一些关键工艺进行研究之后,采用XRD法对欧姆接触成分进行了分析,结果表明形成了二元合金相Ni2Si.为了防止界面态密度的提高而导致漏电流增大,肖特基结的设计和加工过程都要严格控制污染源.考虑了所讨论的几个重要影响因素之外,可通过更换大活度放射源、高效地收集方式和提高工艺质量等方式来提高电池的性能.