碳掺杂对28 nm PMOS器件性能的影响

基于28 nm Polysion工艺,研究了在轻掺杂源漏区(LDD)提升掺杂浓度与掺杂碳源对PMOS器件的影响。实验结果表明,掺杂碳原子可以有效抑制硼的瞬时增强扩散效应(TED),并有效降低器件结深,降低漏电流。在P型轻掺杂源漏区(PLDD)提升掺杂浓度,可以有效提高电路速度,但会导致更严重的硼扩散与漏电流。通过研究不同浓度的碳原子与PLDD浓度对器件的影响,选取合适的碳源掺杂浓度并提高PLDD的掺杂浓度,在同样饱和电流的情况下器件具有更小的漏电流,可以提升PMOS器件的饱和电流与漏电流(I_on-I_off)性能约6%。     

晶体硅聚光太阳能电池的发射极和前电极优化

The optimizations of the emitter region and the metal grid of a concentrator silicon solar cell are illustrated. The optimizations are done under 1 sun,100 suns and 200 suns using the 2D numerical simulation tool TCAD software.The optimum finger spacing and its range decrease with the increase in sheet resistance and concentration ratio.The processes of the diffusion and oxidization in the manufacture flow of the silicon solar cells were simulated to get a series of typical emitter dopant profiles to optimize.The efficiency of the solar cell under 100 suns and 200 suns increased with the decrease in diffusion temperature and the increase in oxidation temperature and time when the diffusion temperature is lower than or equal to 865℃.The effect of sheet resistance of the emitter on series resistance and the conversion efficiency of the solar cell under concentration was discussed.