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Quaternary Ⅲ-V semiconductor compound In1-xGaxAsyP1-y has recently attracted much attention to the application of various optoelectronic devices. And the lattice dynamics of InGaAsP is also interesting from a physical point of view.We reported a Raman spectra of quaternary InGaAsP epitaxial layers grown on InP over the whole range of composition (0≤y≤1 and 0≤x≤0.47). Raman measurements were performed in the backscattering geometry using a variety of lines of Ar+ laser in the room-temperature and liquid nitrogen temperature ambient. From these measuments, we confirmed that the phonon spectra of InGaAsP exhibited four-mode behaviour of the alloy. We plotted the peak frequencies of the Raman spectra as a function of y (or x), temperature and wavelength of incident light,and also discussed the composition dependence of the peaks intensities.  相似文献   
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随着认可业务的持续扩展,如何及时提供充足的评审员资源显得愈发重要。通常,企业通过实施人力资源规划为今后的人力资源发展提供输入。人力资源规划的核心是对人力资源需求和供给的预测。而在选择适当的预测方法前,需对影响人力资源需求的因素进行分析。  相似文献   
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