基于SOI纳米线AWG超紧凑三向滤波器

本文针对FTTH,设计并制备了基于SOI纳米线AWG的三向滤波器。利用传输函数法模拟了器件的传输谱,模拟结果表明器件能很好的实现三向滤波的功能。通过深紫外光刻和感应耦合等离子刻蚀设备,制备了所设计的器件。输出光谱分析表明,器件的通道间串扰为-15 dB,3 dB带宽为11.04 nm,三个通道的输出波长分别为1455 nm、1510 nm和1300 nm,偏离了设计值,波长的偏移主要是由制造过程中阵列波导宽度的偏移设计宽度45 nm引起的,材料色散也是导致波长偏移设计值的一方面原因。     

Ultra compact triplexing filters based on SOI nanowire AWGs

An ultra compact triplexing filter was designed based on a silicon on insulator(SOI) nanowire arrayed waveguide grating(AWG) for fiber-to-the-home FTTH.The simulation results revealed that the design performed well in the sense of having a good triplexing function.The designed SOI nanowire AWGs were fabricated using ultraviolet lithography and induced coupler plasma etching.The experimental results showed that the crosstalk was less than -15 dB,and the 3 dB-bandwidth was 11.04 nm.The peak wavelength output from ports a,c,and b were 1455,1510 and 1300 nm,respectively,which deviated from our original expectations.The deviation of the wavelength is mainly caused by 45 nm width deviation of the arrayed waveguides during the course of the fabrication process and partly caused by material dispersion.     

基于硅纳米线波导的16通道200GHz阵列波导光栅

设计了基于硅纳米线波导的16通道,通道间隔为200GHz的阵列波导光栅(AWG)。传输函数法模拟了器件传输谱,结果表明器件的通道间隔为1.6nm,通道间串扰为31dB。器件利用SOI材料,由193nm深紫外光刻工艺制备。光谱测试结果分析表明,通道串扰为5-8dB,中心通道损耗2.2dB,自由光谱区长度24.7nm,平均信道间隔1.475nm。详细分析了器件谱线畸变的原因。     

slot波导包覆层对功率密度的影响

理论模拟研究了硅基绝缘(SOI)的slot波导中槽内限制功率与slot波导的结构参数以及包覆层折射率的关系.结果表明,如果包覆层的折射率偏离衬底SiO2的折射率,相同参数下的slot波导的传输损耗大于包覆层为SiO2的结构的传输损耗.分析表明,如果包层与衬底折射率不同,限制的光功率会从slot缝隙中渗透到折射率较高的衬底或者包层中,从而引起能量的损耗.理论模拟得到了在缝隙宽度为0.12μm的情况下,slot波导槽内最大的光功率限制为28.54%,这个值包含了纳米线波导与slot波导直接耦合产生的耦合损耗以及slot波导自身的传输损耗.     

一种分子筛芯片的设计、制备与应用

细菌的快速检测可以对疾病、疫情和环境污染给出早期预警,以便及早控制,防止病菌的蔓延。介绍了一种可用于快速细菌检测的分子筛芯片,给出了分子筛芯片的制备方法。通过研究KOH溶液对硅的不同晶面的湿法腐蚀速率以及这种速率差异对不同晶向硅片腐蚀形态的影响,研究结果表明,能用于分子筛芯片的只能是(110)型硅,进一步研究版图的排布与最后刻蚀结果之间的关系,得出支撑结构的长边必须是与(111)晶面方向垂直才能满足芯片的结构要求。最后介绍了其在细菌检测领域以及氢气提纯等方面的应用。     

16 channel 200 GHz arrayed waveguide grating based on Si nanowire waveguides

A 16 channel arrayed waveguide grating demultiplexer with 200 GHz channel spacing based on Si nanowire waveguides is designed.The transmission spectra response simulated by transmission function method shows that the device has channel spacing of 1.6 nm and crosstalk of 31 dB.The device is fabricated by 193 nm deep UV lithography in silicon-on-substrate.The demultiplexing characteristics are observed with crosstalk of 5-8 dB,central channel’s insertion loss of 2.2 dB,free spectral range of 24.7 nm and average channel spacing of 1.475 nm.The cause of the spectral distortion is analyzed specifically.